公开(公告)号：US08885398B2

公开(公告)日：2014-11-11

申请号：US13911917

申请日：2013-06-06

Applicant: Micron Technology, Inc.

Inventor： Jun Liu ,  Gurtej Sandhu

IPC: G11C11/00 ,  G11C11/16 ,  B82Y25/00 ,  G01R33/09 ,  G01R33/12 ,  H01F10/32 ,  B82Y10/00

CPC classification number: G11C11/1675 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/16 ,  H01F10/3218 ,  Y10S977/934

Abstract: Spin current generators and systems and methods for employing spin current generators. A spin current generator may be configured to generate a spin current polarized in one direction, or a spin current selectively polarized in two directions. The spin current generator may by employed in spintronics applications, wherein a spin current is desired.

Abstract translation: 自旋电流发生器和采用自旋电流发生器的系统和方法。 自旋电流发生器可以被配置为产生在一个方向上偏振的自旋电流，或者在两个方向上选择性地偏振的自旋电流。 自旋电流发生器可用于自旋电子学应用中，其中期望自旋电流。

公开(公告)号：US20040150910A1

公开(公告)日：2004-08-05

申请号：US10768104

申请日：2004-02-02

Applicant: Hitachi, Ltd.

Inventor： Tomohiro Okada ,  Yoshiaki Kawato ,  Yasutaka Nishida ,  Yasuo Wakaki ,  Masafumi Mochizuki ,  Hisashi Takano

IPC: G11B005/127

CPC classification number: G11B5/1278 ,  G11B5/012 ,  Y10S977/934 ,  Y10S977/935

Abstract: A magnetic head for perpendicular recording without writing from the lateral sides of a mains pole and without erasing data on adjacent tracks. A magnetic disk storage apparatus using the magnetic head. The lateral side of the main pole of a magnetic head for perpendicular recording may have an inverted tapered shape obtained by forming a groove as a track portion to an inorganic insulating layer and then forming a magnetic layer and then flattening the upper surface. A leading edge, a trailing edge, or both lateral edges of the magnetic head may be tapered. The taper may be either smooth and linear or curved in profile.

Abstract translation: 用于垂直记录的磁头，无需从电源极的侧面写入，而不会在相邻轨道上擦除数据。 一种使用该磁头的磁盘存储装置。 用于垂直记录的磁头的主极的侧面可以具有通过在无机绝缘层上形成作为轨道部分的槽然后形成磁性层然后使上表面变平而获得的倒锥形。 磁头的前缘，后缘或两个侧边缘可以是锥形的。 锥形可以是平滑的，线性的或弯曲的。

公开(公告)号：US20030179478A1

公开(公告)日：2003-09-25

申请号：US10104422

申请日：2002-03-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Peter Cheng-I Fang ,  Xiangjun (Leon) Feng ,  Terence Tin-Lok Lam ,  Zhong-Heng Lin

IPC: G11B027/36 ,  G11B005/09 ,  G11B005/02

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/09 ,  G11B20/10009 ,  G11B27/36 ,  G11B2005/001 ,  G11B2005/3996 ,  Y10S977/934

Abstract: A nonlinear transition shift (NLTS) measurement procedure for read/write heads employing a giant magnetoresistive (GMR) merged heads. The method of this invention includes the pulse-shape distortion effects on recording nonlinearity, which can significantly affect the existing theoretical formulae for calculating nonlinearity correction factor from measured partial erasure values, and second-order approximation of equation of NLTS and nonlinearity correction factor. Transition broadening effects (TBE) and partial erasure (PE) are incorporated in the NLTS measurement procedure to permit accurate isolation of the NLTS from the unrelated TBE/PE and GMR nonlinear transfer characteristic (NTC). First, a fifth harmonic elimination (5HE) test is performed at bit period T to measure a first nonlinearity value X. Then two partial erasure (PE) tests are done at two different densities, one below the PE threshold to measure a second nonlinearity value XS and the other at the same density as the 5HE test to measure a third nonlinearity value Xh. Finally, the NLTS is computed by combining the first, second and third nonlinearity values.

Abstract translation: 采用巨磁阻（GMR）合并磁头的读/写头的非线性转换偏移（NLTS）测量程序。 本发明的方法包括对记录非线性的脉冲形状失真影响，这可以显着影响现有的用于从测量的部分擦除值计算非线性校正因子的理论公式，以及NLTS和非线性校正因子等式的二阶近似。 过渡拓宽效应（TBE）和部分擦除（PE）被纳入到NLTS测量程序中，以允许NLTS与无关TBE / PE和GMR非线性传递特性（NTC）的精确隔离。 首先，在位周期T执行第五次谐波消除（5HE）测试以测量第一非线性值X.然后，以两个不同的密度进行两次部分擦除（PE）测试，一个低于PE阈值，以测量第二非线性值 XS和另一个与5HE测试相同的密度来测量第三非线性值Xh。 最后，通过组合第一，第二和第三非线性值来计算NLTS。

公开(公告)号：US06535365B1

公开(公告)日：2003-03-18

申请号：US09505885

申请日：2000-02-17

Applicant: Rosa A. Lukaszew ,  Yongning Sheng ,  Roy Clarke ,  Ctirad Uher

Inventor： Rosa A. Lukaszew ,  Yongning Sheng ,  Roy Clarke ,  Ctirad Uher

IPC: G11B533

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/3254 ,  H01F41/307 ,  Y10S977/838 ,  Y10S977/934 ,  Y10S977/935

Abstract: A magnetic tunneling structure formed of first and second ferromagnetic layers and a insulating tunneling barrier layer sandwiched therebetween. The first and second ferromagnetic layers are preferably formed of the same ferromagnetic material, but have different crystallographic structures. The insulating tunneling barrier layer is preferably a nitride layer, for example, boron nitride, formed on the first ferromagnetic layer.

Abstract translation: 由第一和第二铁磁层形成的磁隧道结构和夹在其间的绝缘隧道势垒层。 第一和第二铁磁层优选由相同的铁磁材料形成，但具有不同的晶体结构。 绝缘隧道势垒层优选为在第一铁磁层上形成的氮化物层，例如氮化硼。

公开(公告)号：US20020024780A1

公开(公告)日：2002-02-28

申请号：US09907219

申请日：2001-07-17

Inventor： Sining Mao ,  Anthony M. Mack ,  Brenda A. Everitt ,  Edward S. Murdock ,  Zheng Gao

IPC: G11B005/39

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10S977/934 ,  Y10T29/49046

Abstract: Disclosed are a spin valve magnetoresistive sensor and methods of fabricating the same. The sensor includes a free layer, a synthetic antiferromagnetic (SAF) layer, a spacer layer positioned between the free layer and the SAF layer, and a Mn-based antiferromagnetic pinning layer in contact wish the SAF layer. The SAF layer includes first and second ferromagnetic CoFe layers and an Ru spacer layer positioned between and directly in contact with the first and second CoFe ferromagnetic layers.

Abstract translation: 公开了一种自旋阀磁阻传感器及其制造方法。 传感器包括自由层，合成反铁磁（SAF）层，位于自由层和SAF层之间的间隔层，以及接触希望SAF层的Mn基反铁磁钉扎层。 SAF层包括位于第一和第二CoFe铁磁层之间并直接与第一和第二CoFe铁磁层接触的第一和第二铁磁CoFe层和Ru间隔层。

公开(公告)号：US06327121B1

公开(公告)日：2001-12-04

申请号：US09191940

申请日：1998-11-13

Applicant: Keiichi Nagasawa ,  Yutaka Shimizu ,  Hitoshi Kishi ,  Atsushi Tanaka ,  Reiko Kondoh

Inventor： Keiichi Nagasawa ,  Yutaka Shimizu ,  Hitoshi Kishi ,  Atsushi Tanaka ,  Reiko Kondoh

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3929 ,  G11B5/3945 ,  G11B2005/3996 ,  Y10S977/934

Abstract: The invention provides a GMR head in which an adequate bias point may be set for the free magnetic layer 12 of the GMR head by suppressing the static magnetic field in the free magnetic layer which arises from a pinned magnetic layer 14 of the GMR head. The GMR head comprises a sensor section 10, a magnetic field correction section 20 disposed laterally adjacent to the sensor section 10. The sensor section 10 includes, in addition to the free magnetic layer 12 and the pinned magnetic layer 14, an intermediate layer 13 and an anti-ferromagnetic layer 15 in a specific arrangement. The magnetic field correction section 20 may have the same structure as the sensor section 10. Because the sensor section 10 and the magnetic field correction section 20 are provided independently and disposed laterally adjacent to each other in the direction of height of the GMR head, the magnetic field emerging from the pinned magnetic layer 14 into the free magnetic layer 12 is suppressed by the magnetic field correction section 20. The magnetic field correction section 20 may be easily formed together and simultaneously with the sensor section 10.

Abstract translation: 本发明提供一种GMR头，其中可以通过抑制由GMR头的钉扎磁性层14产生的自由磁性层中的静态磁场，为GMR头的自由磁性层12设置适当的偏置点。 GMR头包括传感器部分10，与传感器部分10相邻设置的磁场校正部分20.传感器部分10除了自由磁性层12和固定磁性层14之外还包括中间层13和 具有特定布置的反铁磁层15。 磁场校正部20可以具有与传感器部10相同的结构。由于传感器部10和磁场校正部20独立地设置并且在GMR头的高度方向上彼此横向相邻设置， 通过磁场校正部20抑制从被钉扎磁性层14向自由磁性层12出射的磁场。磁场校正部20可以容易地与传感器部10一起形成。

公开(公告)号：US20130272061A1

公开(公告)日：2013-10-17

申请号：US13911917

申请日：2013-06-06

Applicant: Jun Liu ,  Gurtej Sandhu

Inventor： Jun Liu ,  Gurtej Sandhu

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/16 ,  H01F10/3218 ,  Y10S977/934

Abstract: Spin current generators and systems and methods for employing spin current generators. A spin current generator may be configured to generate a spin current polarized in one direction, or a spin current selectively polarized in two directions. The spin current generator may by employed in spintronics applications, wherein a spin current is desired.

Abstract translation: 自旋电流发生器和采用自旋电流发生器的系统和方法。 自旋电流发生器可以被配置为产生在一个方向上偏振的自旋电流，或者在两个方向上选择性地偏振的自旋电流。 自旋电流发生器可用于自旋电子学应用中，其中期望自旋电流。

公开(公告)号：US08462544B2

公开(公告)日：2013-06-11

申请号：US13555940

申请日：2012-07-23

Applicant: Jun Liu ,  Gurtej Sandhu

Inventor： Jun Liu ,  Gurtej Sandhu

IPC: G11C11/00

CPC classification number: G11C11/1675 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/16 ,  H01F10/3218 ,  Y10S977/934

Abstract: Spin current generators and systems and methods for employing spin current generators. A spin current generator may be configured to generate a spin current polarized in one direction, or a spin current selectively polarized in two directions. The spin current generator may by employed in spintronics applications, wherein a spin current is desired.

Abstract translation: 自旋电流发生器和采用自旋电流发生器的系统和方法。 自旋电流发生器可以被配置为产生在一个方向上偏振的自旋电流，或者在两个方向上选择性地偏振的自旋电流。 自旋电流发生器可用于自旋电子学应用中，其中期望自旋电流。

公开(公告)号：US07876603B2

公开(公告)日：2011-01-25

申请号：US12242228

申请日：2008-09-30

Applicant: Jun Liu ,  Gurtej Sandhu

Inventor： Jun Liu ,  Gurtej Sandhu

IPC: G11C11/00

CPC classification number: G11C11/1675 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/16 ,  H01F10/3218 ,  Y10S977/934

Abstract: Spin current generators and systems and methods for employing spin current generators. A spin current generator may be configured to generate a spin current polarized in one direction, or a spin current selectively polarized in two directions. The spin current generator may by employed in spintronics applications, wherein a spin current is desired.

Abstract translation: 自旋电流发生器和采用自旋电流发生器的系统和方法。 自旋电流发生器可以被配置为产生在一个方向上偏振的自旋电流，或者在两个方向上选择性地偏振的自旋电流。 自旋电流发生器可用于自旋电子学应用中，其中期望自旋电流。

公开(公告)号：US07217577B2

公开(公告)日：2007-05-15

申请号：US11522663

申请日：2006-09-18

Applicant: Cheng T. Horng ,  Mao-Min Chen ,  Liubo Hong ,  Ru-Ying Tong

Inventor： Cheng T. Horng ,  Mao-Min Chen ,  Liubo Hong ,  Ru-Ying Tong

IPC: H01L21/00

CPC classification number: H01L43/12 ,  H01L43/08 ,  Y10S977/934 ,  Y10S977/935

Abstract: An MTJ (magnetic tunneling junction) MRAM (magnetic random access memory) cell is formed on a conducting lead and magnetic keeper layer that is capped by a sputter-etched Ta layer. The Ta capping layer has a smooth surface as a result of the sputter-etching and that smooth surface promotes the subsequent formation of a lower electrode (pinning/pinned layer) with smooth, flat layers and a radical oxidized (ROX) Al tunneling barrier layer which is ultra-thin, smooth, and to has a high breakdown voltage. A seed layer of NiCr is formed on the sputter-etched capping layer of Ta. The resulting device has generally improved performance characteristics in terms of its switching characteristics, GMR ratio and junction resistance.

Abstract translation: 在由溅射蚀刻的Ta层覆盖的导电引线和磁保持层上形成MTJ（磁性隧道结）MRAM（磁性随机存取存储器）单元。 作为溅射蚀刻的结果，Ta覆盖层具有光滑的表面，并且光滑表面促进随后形成具有光滑的平坦层和自由基氧化（ROX）Al隧穿势垒层的下电极（钉扎/钉扎层） 其超薄，光滑，并具有高击穿电压。 在Ta的溅射蚀刻的覆盖层上形成NiCr种子层。 在其开关特性，GMR比和结电阻方面，所得到的器件通常具有改进的性能特性。