摘要:
An electrically writable/erasable nonvolatile semiconductor memory such as an AND-type or NOR-type flash memory having an array structure, in which numerous memory cells are connected in parallel between common bit lines and source lines, is capable of readily detecting a memory cell in depletion failure which occurs in the event of a power supply cutoff during a memory cell threshold voltage shift-down operation by the writing or erasing operation. In operation, at the entry of a certain command or at the time of power-on, all word lines are unselected and bit line selecting switches are turned on to find the presence of a memory cell having a current flow due to depletion failure with sense amplifiers connected to the bit lines. On finding the presence of a failing cell, a voltage of selection level (VSS or negative voltage) is applied to each word line in turn, with remaining word lines being pulled to an unselection voltage level (negative voltage or VSS).
摘要:
An injection molded article obtained by injection molding a thermoplastic resin composition comprising 100 parts by mass of a thermoplastic resin and 50 parts by mass or less of at least one of a filler and a colored metallic pigment, wherein at least one weld exists, and a long diameter of 95% by mass or more of the filler existing within a cross-sectional depth of 50 μm or less from a surface of the weld is parallel to the surface of the weld.
摘要:
A memory cell of a memory array stores two bits. A memory array sense amplifier provides two bits in a verify operation. Two bits in a page buffer stores a write target value for the corresponding memory cell. Each bit in a mask buffer stores a value defining processing to be effected on the corresponding memory cell. A write driver applies a write pulse when the bit in the mask buffer corresponding to the selected memory cell is “0”. A verify circuit compares the two bits provided from the memory array sense amplifier with the corresponding two bits in the page buffer, and changes the corresponding bit in the mask buffer from “0” to “1” when the result of the comparison represents matching.
摘要:
Disclosed is a styrene-based resin composition that comprises 5-20 parts by mass of (D) a fire retardant per 100 parts by mass of a resin composition (1) that comprises 30-51 mass % of (A) a graft copolymer obtained by graft polymerization of a diene rubber polymer with an aromatic vinyl monomer and an unsaturated nitrile monomer, 10-55 mass % of (B) a copolymer comprising two or more monomers selected from among aromatic vinyl monomers, unsaturated nitrile monomers and unsaturated carboxylic acid alkyl ester monomers, and 15 to 39% by mass of a copolymer (C) comprising one kind of unsaturated carboxylic acid alkyl ester monomers, or two or more unsaturated carboxylic acid alkyl ester monomers, ((A)+(B)+(C)=100 mass %), wherein the diene rubber polymer constitutes 15-25 mass % of the resin composition (1).
摘要:
A memory cell of a memory array stores two bits. A memory array sense amplifier provides two bits in a verify operation. Two bits in a page buffer stores a write target value for the corresponding memory cell. Each bit in a mask buffer stores a value defining processing to be effected on the corresponding memory cell. A write driver applies a write pulse when the bit in the mask buffer corresponding to the selected memory cell is “0”. A verify circuit compares the two bits provided from the memory array sense amplifier with the corresponding two bits in the page buffer, and changes the corresponding bit in the mask buffer from “0” to “1” when the result of the comparison represents matching.
摘要:
The present invention is an uncoated housing in which a molded product formed from a thermoplastic resin composition (D) containing 20-60% by mass of an acetone insoluble resin component (A), which contains a rubber component (a) with an average particle size of 0.05-0.3 μm and has a coefficient of linear expansion of 11×10−5-20.5×10−5, 40-80% by mass of an acetone soluble resin component (B) (here, (A)+(B)=100% by mass), and a colorant (C), with (1) the acetone soluble resin component (B) containing 6.0-45% by mass of an unsaturated nitrile monomer derived component and (2) 2-20% by mass of a component with a molecular weight of 70,000 or less by gel permeation chromatography (GPC) measurements being contained in the acetone soluble resin component (B). On the basis of JIS K7105, the L* value for this uncoated housing is 13 or less, the luster 60-120%, and the haze value 30-90%.
摘要:
An injection molded article obtained by injection molding a thermoplastic resin composition comprising 100 parts by mass of a thermoplastic resin and 50 parts by mass or less of at least one of a filler and a colored metallic pigment, wherein at least one weld exists, and a long diameter of 95% by mass or more of the filler existing within a cross-sectional depth of 50 μm or less from a surface of the weld is parallel to the surface of the weld.
摘要:
A memory cell of a memory array stores two bits. A memory array sense amplifier provides two bits in a verify operation. Two bits in a page buffer stores a write target value for the corresponding memory cell. Each bit in a mask buffer stores a value defining processing to be effected on the corresponding memory cell. A write driver applies a write pulse when the bit in the mask buffer corresponding to the selected memory cell is “0”. A verify circuit compares the two bits provided from the memory array sense amplifier with the corresponding two bits in the page buffer, and changes the corresponding bit in the mask buffer from “0” to “1” when the result of the comparison represents matching.
摘要:
A memory cell of a memory array stores two bits. A memory array sense amplifier provides two bits in a verify operation. Two bits in a page buffer stores a write target value for the corresponding memory cell. Each bit in a mask buffer stores a value defining processing to be effected on the corresponding memory cell. A write driver applies a write pulse when the bit in the mask buffer corresponding to the selected memory cell is “0”. A verify circuit compares the two bits provided from the memory array sense amplifier with the corresponding two bits in the page buffer, and changes the corresponding bit in the mask buffer from “0” to “1” when the result of the comparison represents matching.
摘要:
An uncoated, highly reflective, impact-resistant injection-molded article which comprises a rubber ingredient (A) and a thermoplastic resin (B), characterized in that (1) the rubber ingredient (A) has been dispersed in the thermoplastic resin (B), (2) the rubber ingredient (A) has a coefficient of linear expansion of 12.5×10−5 to 19×10−5/° C., (3) the surface of the injection-molded article has a reflected-image clarity of 60-100%, and (4) the injection-molded article has a notched Charpy impact strength of 5-60 kJ/m2.