Nonvolatile memory and method of restoring of failure memory cell
    11.
    发明授权
    Nonvolatile memory and method of restoring of failure memory cell 失效
    非易失性存储器和故障存储器单元的恢复方法

    公开(公告)号:US07012836B2

    公开(公告)日:2006-03-14

    申请号:US10767627

    申请日:2004-01-30

    IPC分类号: G11C16/04

    CPC分类号: G11C16/225

    摘要: An electrically writable/erasable nonvolatile semiconductor memory such as an AND-type or NOR-type flash memory having an array structure, in which numerous memory cells are connected in parallel between common bit lines and source lines, is capable of readily detecting a memory cell in depletion failure which occurs in the event of a power supply cutoff during a memory cell threshold voltage shift-down operation by the writing or erasing operation. In operation, at the entry of a certain command or at the time of power-on, all word lines are unselected and bit line selecting switches are turned on to find the presence of a memory cell having a current flow due to depletion failure with sense amplifiers connected to the bit lines. On finding the presence of a failing cell, a voltage of selection level (VSS or negative voltage) is applied to each word line in turn, with remaining word lines being pulled to an unselection voltage level (negative voltage or VSS).

    摘要翻译: 诸如具有阵列结构的AND型或NOR型闪速存储器的电可写/可擦除非易失性半导体存储器,其中许多存储器单元并联在公共位线和源极线之间,能够容易地检测存储器单元 在通过写入或擦除操作在存储单元阈值电压偏移操作期间在电源切断的情况下发生的耗尽故障。 在操作中,在特定命令的输入或上电时,所有字线都被选择,并且位线选择开关被接通,以发现存在由于消耗故障导致的具有电流的存储器单元 连接到位线的放大器。 在发现故障单元的存在时,依次对每个字线施加选择电平(VSS或负电压)的电压,其余字线被拉至非选择电压电平(负电压或VSS)。

    Nonvolatile semiconductor memory device for writing multivalued data
    13.
    发明授权
    Nonvolatile semiconductor memory device for writing multivalued data 有权
    用于写入多值数据的非易失性半导体存储器件

    公开(公告)号:US07742334B2

    公开(公告)日:2010-06-22

    申请号:US11819016

    申请日:2007-06-25

    IPC分类号: G11C11/34 G11C16/04

    摘要: A memory cell of a memory array stores two bits. A memory array sense amplifier provides two bits in a verify operation. Two bits in a page buffer stores a write target value for the corresponding memory cell. Each bit in a mask buffer stores a value defining processing to be effected on the corresponding memory cell. A write driver applies a write pulse when the bit in the mask buffer corresponding to the selected memory cell is “0”. A verify circuit compares the two bits provided from the memory array sense amplifier with the corresponding two bits in the page buffer, and changes the corresponding bit in the mask buffer from “0” to “1” when the result of the comparison represents matching.

    摘要翻译: 存储器阵列的存储单元存储两个位。 存储器阵列读出放大器在验证操作中提供两个位。 页面缓冲器中的两位存储对应存储单元的写入目标值。 掩码缓冲器中的每个位存储要在对应的存储器单元上进行的定义处理的值。 当对应于所选存储单元的掩码缓冲器中的位为“0”时,写入驱动器施加写入脉冲。 验证电路将存储器阵列读出放大器提供的两位与页缓冲器中相应的两位进行比较,当比较结果表示匹配时,将掩码缓冲器中的相应位从“0”更改为“1”。

    Styrene-based resin composition, and resin molded article comprising same
    14.
    发明授权
    Styrene-based resin composition, and resin molded article comprising same 有权
    苯乙烯类树脂组合物和包含它们的树脂模制品

    公开(公告)号:US08829104B2

    公开(公告)日:2014-09-09

    申请号:US13635765

    申请日:2011-03-18

    摘要: Disclosed is a styrene-based resin composition that comprises 5-20 parts by mass of (D) a fire retardant per 100 parts by mass of a resin composition (1) that comprises 30-51 mass % of (A) a graft copolymer obtained by graft polymerization of a diene rubber polymer with an aromatic vinyl monomer and an unsaturated nitrile monomer, 10-55 mass % of (B) a copolymer comprising two or more monomers selected from among aromatic vinyl monomers, unsaturated nitrile monomers and unsaturated carboxylic acid alkyl ester monomers, and 15 to 39% by mass of a copolymer (C) comprising one kind of unsaturated carboxylic acid alkyl ester monomers, or two or more unsaturated carboxylic acid alkyl ester monomers, ((A)+(B)+(C)=100 mass %), wherein the diene rubber polymer constitutes 15-25 mass % of the resin composition (1).

    摘要翻译: 公开了一种苯乙烯类树脂组合物,其包含相对于100质量份的树脂组合物(1)中的(D)阻燃剂为5〜20质量份,所述树脂组合物包含30〜51质量%的(A)获得的接枝共聚物 通过二烯橡胶聚合物与芳族乙烯基单体和不饱和腈单体的接枝聚合,10-55质量%的(B)包含两种或更多种选自芳族乙烯基单体,不饱和腈单体和不饱和羧酸烷基的单体的共聚物 酯单体和15〜39质量%的包含一种不饱和羧酸烷基酯单体或两种或更多种不饱和羧酸烷基酯单体的共聚物(C)((A)+(B)+(C) = 100质量%),其中二烯橡胶聚合物占树脂组合物(1)的15-25质量%。

    Uncoated housing and method for manufacturing same
    16.
    发明授权
    Uncoated housing and method for manufacturing same 有权
    无涂层住房及其制造方法

    公开(公告)号:US09187626B2

    公开(公告)日:2015-11-17

    申请号:US14237936

    申请日:2012-08-10

    摘要: The present invention is an uncoated housing in which a molded product formed from a thermoplastic resin composition (D) containing 20-60% by mass of an acetone insoluble resin component (A), which contains a rubber component (a) with an average particle size of 0.05-0.3 μm and has a coefficient of linear expansion of 11×10−5-20.5×10−5, 40-80% by mass of an acetone soluble resin component (B) (here, (A)+(B)=100% by mass), and a colorant (C), with (1) the acetone soluble resin component (B) containing 6.0-45% by mass of an unsaturated nitrile monomer derived component and (2) 2-20% by mass of a component with a molecular weight of 70,000 or less by gel permeation chromatography (GPC) measurements being contained in the acetone soluble resin component (B). On the basis of JIS K7105, the L* value for this uncoated housing is 13 or less, the luster 60-120%, and the haze value 30-90%.

    摘要翻译: 本发明是一种未涂覆的外壳,其中由含有20-60质量%丙酮不溶性树脂组分(A)的热塑性树脂组合物(D)形成的模制产品,其含有具有平均颗粒的橡胶组分(a) 尺寸为0.05-0.3μm,线膨胀系数为丙烯可溶性树脂成分(B)为11×10-5-20.5×10-5,40〜80质量%(这里为(A)+(B )= 100质量%)和着色剂(C),(1)丙酮可溶性树脂成分(B)含有6.0〜45质量%的不饱和腈单体衍生成分,(2)2-20% 在丙酮可溶性树脂组分(B)中包含通过凝胶渗透色谱(GPC)测量的分子量为70,000或更小的组分的质量。 根据JIS K7105,该未涂覆的壳体的L *值为13以下,光泽度为60-120%,雾度值为30-90%。

    INJECTION MOLDED ARTICLE
    17.
    发明申请
    INJECTION MOLDED ARTICLE 有权
    注射成型品

    公开(公告)号:US20130203932A1

    公开(公告)日:2013-08-08

    申请号:US13876867

    申请日:2011-09-30

    IPC分类号: C08L25/06

    摘要: An injection molded article obtained by injection molding a thermoplastic resin composition comprising 100 parts by mass of a thermoplastic resin and 50 parts by mass or less of at least one of a filler and a colored metallic pigment, wherein at least one weld exists, and a long diameter of 95% by mass or more of the filler existing within a cross-sectional depth of 50 μm or less from a surface of the weld is parallel to the surface of the weld.

    摘要翻译: 一种注射成型热塑性树脂组合物的注射成型体,该热塑性树脂组合物包含100质量份热塑性树脂和50质量份以下的填料和着色金属颜料中的至少一种,其中至少存在一个焊缝,以及 存在于焊接表面的50μm以下的截面深度内的填料的95质量%以上的长直径平行于焊接面。

    Nonvolatile semiconductor memory device for writing multivalued data
    18.
    发明授权
    Nonvolatile semiconductor memory device for writing multivalued data 有权
    用于写入多值数据的非易失性半导体存储器件

    公开(公告)号:US07518929B2

    公开(公告)日:2009-04-14

    申请号:US11819015

    申请日:2007-06-25

    IPC分类号: G11C11/34 G11C16/06

    摘要: A memory cell of a memory array stores two bits. A memory array sense amplifier provides two bits in a verify operation. Two bits in a page buffer stores a write target value for the corresponding memory cell. Each bit in a mask buffer stores a value defining processing to be effected on the corresponding memory cell. A write driver applies a write pulse when the bit in the mask buffer corresponding to the selected memory cell is “0”. A verify circuit compares the two bits provided from the memory array sense amplifier with the corresponding two bits in the page buffer, and changes the corresponding bit in the mask buffer from “0” to “1” when the result of the comparison represents matching.

    摘要翻译: 存储器阵列的存储单元存储两个位。 存储器阵列读出放大器在验证操作中提供两个位。 页面缓冲器中的两位存储对应存储单元的写入目标值。 掩码缓冲器中的每个位存储要在对应的存储器单元上进行的定义处理的值。 当对应于所选存储单元的掩码缓冲器中的位为“0”时,写入驱动器施加写入脉冲。 验证电路将存储器阵列读出放大器提供的两位与页缓冲器中相应的两位进行比较,当比较结果表示匹配时,将掩码缓冲器中的相应位从“0”更改为“1”。

    Nonvolatile semiconductor memory device for writing multivalued data
    19.
    发明授权
    Nonvolatile semiconductor memory device for writing multivalued data 有权
    用于写入多值数据的非易失性半导体存储器件

    公开(公告)号:US07242611B2

    公开(公告)日:2007-07-10

    申请号:US11082992

    申请日:2005-03-18

    IPC分类号: G11C11/34 G11C16/04

    摘要: A memory cell of a memory array stores two bits. A memory array sense amplifier provides two bits in a verify operation. Two bits in a page buffer stores a write target value for the corresponding memory cell. Each bit in a mask buffer stores a value defining processing to be effected on the corresponding memory cell. A write driver applies a write pulse when the bit in the mask buffer corresponding to the selected memory cell is “0”. A verify circuit compares the two bits provided from the memory array sense amplifier with the corresponding two bits in the page buffer, and changes the corresponding bit in the mask buffer from “0” to “1” when the result of the comparison represents matching.

    摘要翻译: 存储器阵列的存储单元存储两个位。 存储器阵列读出放大器在验证操作中提供两个位。 页面缓冲器中的两位存储对应存储单元的写入目标值。 掩码缓冲器中的每个位存储要在对应的存储器单元上进行的定义处理的值。 当对应于所选存储单元的掩码缓冲器中的位为“0”时,写入驱动器施加写入脉冲。 验证电路将存储器阵列读出放大器提供的两位与页缓冲器中相应的两位进行比较,当比较结果表示匹配时,将掩码缓冲器中的相应位从“0”更改为“1”。