摘要:
System devices include network interfaces to communicate with user devices associated with a user, memories for storing instructions to be executed by processors, and the processors. The processors are configured to execute the instructions to receive, from a first user device, among the user devices, a request for content; initiate an upload of the requested content to the first user device in response to the request; receive a request for a license key from the first user device in response to the initiation of the upload; determine whether a number of concurrent sessions with the user devices exceeds a maximum number; and send the license key to the first user device when the processors determine that the number of concurrent sessions does not exceed the maximum number.
摘要:
A device receives, from a user device, a search query for video content listings in a video catalog. The device identifies, based on the search query, a set of relevant video assets from an index of the catalog content and determines dimensional values of the search query. The device determines a subset of the relevant video assets based on filtering usage metrics, for the set of relevant video assets, against the dimensional values. The device calculates a popularity value for each video asset in the subset of the relevant video assets and ranks each video asset in the subset of the relevant video assets to form a ranked list. The device sends, to the user device, a response to the search query that includes the ranked list.
摘要:
According to one embodiment, a one-time programmable (OTP) device comprises a memory FinFET in parallel with a sensing FinFET. The memory FinFET and the sensing FinFET share a common source region, a common drain region, and a common channel region. The memory FinFET is programmed by having a ruptured gate dielectric, resulting in the sensing FinFET having an altered threshold voltage and an altered drain current. A method for utilizing such an OTP device comprises applying a programming voltage for rupturing the gate dielectric of the memory FinFET thereby achieving a programmed state of the memory FinFET, and detecting by the sensing FinFET the altered threshold voltage and the altered drain current due to the programmed state of the memory FinFET.
摘要:
A mobile communication device receives information associated with multiple home devices, and generates, based on the home device information, a connected home dashboard that includes a home device item, a modes item, a monitoring item, a security item, and a notifications item. The mobile communication device also provides the connected home dashboard for display to a user, and receives, from the user, a selection of one of the home device item, the modes item, the monitoring item, the security item, or the notifications item. The mobile communication device further provides, based on the home device information and for display to the user, information associated with the selected item.
摘要:
According to one exemplary embodiment, a method for concurrently fabricating a memory region with a logic region in a common substrate includes forming a lower dielectric segment in the common substrate in the memory and logic regions. The method also includes forming a polysilicon segment over the lower dielectric segment in the memory region, while concurrently forming a sacrificial polysilicon segment over the lower dielectric segment in the logic region. Furthermore, the method includes removing from the logic region the lower dielectric segment and the sacrificial polysilicon segment. The method additionally includes forming a high-k segment in the logic region over the common substrate, and in the memory region over the polysilicon segment and forming a metal segment over the high-k segment in the logic and memory regions. An exemplary structure achieved by the described exemplary method is also disclosed.
摘要:
According to an exemplary embodiment, a method for fabricating a MOS transistor, such as an LDMOS transistor, includes forming a self-aligned lightly doped region in a first well underlying a first sidewall of a gate. The method further includes forming a self-aligned extension region under a second sidewall of the gate, where the self-aligned extension region extends into the first well from a second well. The method further includes forming a drain region spaced apart from the second sidewall of the gate. The method further includes forming a source region in the self-aligned lightly doped region and the first well. The self-aligned lightly doped region and the self-aligned extension region define a channel length of the MOS transistor, such as an LDMOS transistor.
摘要:
According to one exemplary embodiment, a one-time programmable memory cell includes an access transistor coupled to a shiftable threshold voltage transistor between a bitline and a ground, where the access transistor has a gate coupled to a wordline. The shiftable threshold voltage transistor has a drain and a gate shorted together. A programming operation causes a permanent shift in a threshold voltage of the shiftable threshold voltage transistor to occur in response to a programming voltage on the bitline and the wordline. In one embodiment, the access transistor is an NFET while the shiftable threshold voltage transistor is a PFET. In another embodiment, the access transistor is an NFET and the shiftable threshold voltage transistor is also an NFET. The programming voltage can cause an absolute value of the threshold voltage to permanently increase by at least 50.0 millivolts.
摘要:
According to one exemplary embodiment, a one-time programmable memory cell includes an access transistor coupled to a shiftable threshold voltage transistor between a bitline and a ground, where the access transistor has a gate coupled to a wordline. The shiftable threshold voltage transistor has a drain and a gate shorted together. A programming operation causes a permanent shift in a threshold voltage of the shiftable threshold voltage transistor to occur in response to a programming voltage on the bitline and the wordline. In one embodiment, the access transistor is an NFET while the shiftable threshold voltage transistor is a PFET. In another embodiment, the access transistor is an NFET and the shiftable threshold voltage transistor is also an NFET. The programming voltage can cause an absolute value of the threshold voltage to permanently increase by at least 50.0 millivolts.
摘要:
According to one exemplary embodiment, a method for concurrently fabricating a memory region with a logic region in a common substrate includes forming a lower dielectric segment in the common substrate in the memory and logic regions. The method also includes forming a polysilicon segment over the lower dielectric segment in the memory region, while concurrently forming a sacrificial polysilicon segment over the lower dielectric segment in the logic region. Furthermore, the method includes removing from the logic region the lower dielectric segment and the sacrificial polysilicon segment. The method additionally includes forming a high-k segment in the logic region over the common substrate, and in the memory region over the polysilicon segment and forming a metal segment over the high-k segment in the logic and memory regions. An exemplary structure achieved by the described exemplary method is also disclosed.
摘要:
A method may include generating a list of current files stored in a user device, wherein the list of current files includes unique file identifiers, each associated with a corresponding one of the current files. The method may further include sending the list of current files from the user device to a network device and receiving a copy list from the network device in the user device. The copy list may be generated by comparing the list of current files to a list of previously copied files, and the list of previously copied files may include unique file identifiers, each associated with a different one of the previously copied files. The method may include sending the files listed in the copy list from the user device to the network device.