LIMITING CONCURRENT VIEWING SESSIONS ON MULTIPLE USER DEVICES
    11.
    发明申请
    LIMITING CONCURRENT VIEWING SESSIONS ON MULTIPLE USER DEVICES 有权
    限制多个用户设备上的同时查看会话

    公开(公告)号:US20130152221A1

    公开(公告)日:2013-06-13

    申请号:US13314233

    申请日:2011-12-08

    IPC分类号: G06F21/00

    CPC分类号: G06F21/10 G06F21/105

    摘要: System devices include network interfaces to communicate with user devices associated with a user, memories for storing instructions to be executed by processors, and the processors. The processors are configured to execute the instructions to receive, from a first user device, among the user devices, a request for content; initiate an upload of the requested content to the first user device in response to the request; receive a request for a license key from the first user device in response to the initiation of the upload; determine whether a number of concurrent sessions with the user devices exceeds a maximum number; and send the license key to the first user device when the processors determine that the number of concurrent sessions does not exceed the maximum number.

    摘要翻译: 系统设备包括用于与与用户相关联的用户设备通信的网络接口,用于存储要由处理器执行的指令的存储器和处理器。 处理器被配置为执行从第一用户设备在用户设备之间接收对内容的请求的指令; 响应于该请求,开始向第一用户设备上传所请求的内容; 响应于上传的开始,从第一用户设备接收许可证密钥的请求; 确定与用户设备的并发会话数是否超过最大数量; 并且当处理器确定并发会话的数量不超过最大数量时,将许可证密钥发送到第一用户设备。

    DYNAMIC CATALOG RANKING
    12.
    发明申请
    DYNAMIC CATALOG RANKING 有权
    动态目录排名

    公开(公告)号:US20130144871A1

    公开(公告)日:2013-06-06

    申请号:US13309868

    申请日:2011-12-02

    IPC分类号: G06F17/30

    CPC分类号: G06F17/30817

    摘要: A device receives, from a user device, a search query for video content listings in a video catalog. The device identifies, based on the search query, a set of relevant video assets from an index of the catalog content and determines dimensional values of the search query. The device determines a subset of the relevant video assets based on filtering usage metrics, for the set of relevant video assets, against the dimensional values. The device calculates a popularity value for each video asset in the subset of the relevant video assets and ranks each video asset in the subset of the relevant video assets to form a ranked list. The device sends, to the user device, a response to the search query that includes the ranked list.

    摘要翻译: 设备从用户设备接收视频目录中的视频内容列表的搜索查询。 该设备基于搜索查询来识别来自目录内容的索引的一组相关视频资产,并确定搜索查询的维度值。 该设备基于相对于维度值的相关视频资产集合过滤使用度量来确定相关视频资产的子集。 该设备针对相关视频资产的子集中的每个视频资产计算流行度值,并对相关视频资产的子集中的每个视频资产进行排序以形成排名列表。 该设备向用户设备发送对包括排名列表的搜索查询的响应。

    FINFET Based One-Time Programmable Device and Related Method
    13.
    发明申请
    FINFET Based One-Time Programmable Device and Related Method 有权
    基于FINFET的一次性可编程器件及相关方法

    公开(公告)号:US20130051112A1

    公开(公告)日:2013-02-28

    申请号:US13219414

    申请日:2011-08-26

    IPC分类号: G11C17/08

    摘要: According to one embodiment, a one-time programmable (OTP) device comprises a memory FinFET in parallel with a sensing FinFET. The memory FinFET and the sensing FinFET share a common source region, a common drain region, and a common channel region. The memory FinFET is programmed by having a ruptured gate dielectric, resulting in the sensing FinFET having an altered threshold voltage and an altered drain current. A method for utilizing such an OTP device comprises applying a programming voltage for rupturing the gate dielectric of the memory FinFET thereby achieving a programmed state of the memory FinFET, and detecting by the sensing FinFET the altered threshold voltage and the altered drain current due to the programmed state of the memory FinFET.

    摘要翻译: 根据一个实施例,一次性可编程(OTP)器件包括与感测FinFET并联的存储器FinFET。 存储器FinFET和感测FinFET共享共源极区,公共漏极区和公共沟道区。 存储器FinFET通过具有破裂的栅极电介质来编程,导致感测FinFET具有改变的阈值电压和改变的漏极电流。 一种利用这种OTP器件的方法包括施加用于破坏存储器FinFET的栅极电介质的编程电压,从而实现存储器FinFET的编程状态,并且通过感测FinFET检测改变的阈值电压和改变的漏极电流,由于 存储器FinFET的编程状态。

    Smart home device management
    14.
    发明授权
    Smart home device management 有权
    智能家居设备管理

    公开(公告)号:US08375118B2

    公开(公告)日:2013-02-12

    申请号:US12948900

    申请日:2010-11-18

    IPC分类号: G06F15/173 G06F15/177

    CPC分类号: G05B15/02 G05B2219/2642

    摘要: A mobile communication device receives information associated with multiple home devices, and generates, based on the home device information, a connected home dashboard that includes a home device item, a modes item, a monitoring item, a security item, and a notifications item. The mobile communication device also provides the connected home dashboard for display to a user, and receives, from the user, a selection of one of the home device item, the modes item, the monitoring item, the security item, or the notifications item. The mobile communication device further provides, based on the home device information and for display to the user, information associated with the selected item.

    摘要翻译: 移动通信设备接收与多个家庭设备相关联的信息,并且基于家庭设备信息生成包括家庭设备项目,模式项目,监视项目,安全项目和通知项目的连接的家庭仪表板。 移动通信设备还提供连接的家用仪表板以供用户显示,并且从用户接收家庭设备项目,模式项目,监视项目,安全项目或通知项目中的一个的选择。 移动通信设备还基于家庭设备信息并向用户显示与所选项目相关联的信息。

    Method for Efficiently Fabricating Memory Cells with Logic FETs and Related Structure
    15.
    发明申请
    Method for Efficiently Fabricating Memory Cells with Logic FETs and Related Structure 有权
    使用逻辑FET和相关结构高效地构建存储单元的方法

    公开(公告)号:US20130009231A1

    公开(公告)日:2013-01-10

    申请号:US13179248

    申请日:2011-07-08

    IPC分类号: H01L29/788 H01L21/336

    摘要: According to one exemplary embodiment, a method for concurrently fabricating a memory region with a logic region in a common substrate includes forming a lower dielectric segment in the common substrate in the memory and logic regions. The method also includes forming a polysilicon segment over the lower dielectric segment in the memory region, while concurrently forming a sacrificial polysilicon segment over the lower dielectric segment in the logic region. Furthermore, the method includes removing from the logic region the lower dielectric segment and the sacrificial polysilicon segment. The method additionally includes forming a high-k segment in the logic region over the common substrate, and in the memory region over the polysilicon segment and forming a metal segment over the high-k segment in the logic and memory regions. An exemplary structure achieved by the described exemplary method is also disclosed.

    摘要翻译: 根据一个示例性实施例,用于同时制造具有公共衬底中的逻辑区域的存储区域的方法包括在存储器和逻辑区域中的公共衬底中形成下部介电段。 该方法还包括在存储器区域中的下介电段上形成多晶硅段,同时在逻辑区域中的下介电段上同时形成牺牲多晶硅段。 此外,该方法包括从逻辑区域去除下介电段和牺牲多晶硅段。 该方法还包括在公共衬底上的逻辑区域中形成高k区段,并在多晶硅区段上的存储区域中形成高k区段,并在逻辑和存储区域中的高k区段上形成金属区段。 还公开了通过描述的示例性方法实现的示例性结构。

    Method for fabricating a MOS transistor with reduced channel length variation and related structure
    16.
    发明授权
    Method for fabricating a MOS transistor with reduced channel length variation and related structure 有权
    具有减小沟道长度变化和相关结构的MOS晶体管的制造方法

    公开(公告)号:US08269275B2

    公开(公告)日:2012-09-18

    申请号:US12589357

    申请日:2009-10-21

    IPC分类号: H01L29/78

    摘要: According to an exemplary embodiment, a method for fabricating a MOS transistor, such as an LDMOS transistor, includes forming a self-aligned lightly doped region in a first well underlying a first sidewall of a gate. The method further includes forming a self-aligned extension region under a second sidewall of the gate, where the self-aligned extension region extends into the first well from a second well. The method further includes forming a drain region spaced apart from the second sidewall of the gate. The method further includes forming a source region in the self-aligned lightly doped region and the first well. The self-aligned lightly doped region and the self-aligned extension region define a channel length of the MOS transistor, such as an LDMOS transistor.

    摘要翻译: 根据示例性实施例,用于制造诸如LDMOS晶体管的MOS晶体管的方法包括在栅极的第一侧壁下面的第一阱中形成自对准的轻掺杂区域。 该方法还包括在栅极的第二侧壁下方形成自对准延伸区域,其中自对准延伸区域从第二阱延伸到第一阱中。 该方法还包括形成与栅极的第二侧壁间隔开的漏极区域。 该方法还包括在自对准轻掺杂区域和第一阱中形成源极区域。 自对准轻掺杂区域和自对准延伸区域限定诸如LDMOS晶体管的MOS晶体管的沟道长度。

    One-time programmable memory cell with shiftable threshold voltage transistor
    17.
    发明授权
    One-time programmable memory cell with shiftable threshold voltage transistor 失效
    具有可移位阈值电压晶体管的一次性可编程存储单元

    公开(公告)号:US08050076B2

    公开(公告)日:2011-11-01

    申请号:US12462732

    申请日:2009-08-07

    IPC分类号: G11C17/00

    摘要: According to one exemplary embodiment, a one-time programmable memory cell includes an access transistor coupled to a shiftable threshold voltage transistor between a bitline and a ground, where the access transistor has a gate coupled to a wordline. The shiftable threshold voltage transistor has a drain and a gate shorted together. A programming operation causes a permanent shift in a threshold voltage of the shiftable threshold voltage transistor to occur in response to a programming voltage on the bitline and the wordline. In one embodiment, the access transistor is an NFET while the shiftable threshold voltage transistor is a PFET. In another embodiment, the access transistor is an NFET and the shiftable threshold voltage transistor is also an NFET. The programming voltage can cause an absolute value of the threshold voltage to permanently increase by at least 50.0 millivolts.

    摘要翻译: 根据一个示例性实施例,一次性可编程存储器单元包括耦合到位线和地之间的可移位阈值电压晶体管的存取晶体管,其中存取晶体管具有耦合到字线的栅极。 可移位阈值电压晶体管具有漏极和栅极短路在一起。 编程操作导致响应于位线和字线上的编程电压而发生可移位阈值电压晶体管的阈值电压的永久偏移。 在一个实施例中,存取晶体管是NFET,而可移位阈值电压晶体管是PFET。 在另一个实施例中,存取晶体管是NFET,而可移位阈值电压晶体管也是NFET。 编程电压可导致阈值电压的绝对值永久增加至少50.0毫伏。

    One-time programmable memory cell with shiftable threshold voltage transistor

    公开(公告)号:US20110032742A1

    公开(公告)日:2011-02-10

    申请号:US12462732

    申请日:2009-08-07

    IPC分类号: G11C17/00 G11C7/00

    摘要: According to one exemplary embodiment, a one-time programmable memory cell includes an access transistor coupled to a shiftable threshold voltage transistor between a bitline and a ground, where the access transistor has a gate coupled to a wordline. The shiftable threshold voltage transistor has a drain and a gate shorted together. A programming operation causes a permanent shift in a threshold voltage of the shiftable threshold voltage transistor to occur in response to a programming voltage on the bitline and the wordline. In one embodiment, the access transistor is an NFET while the shiftable threshold voltage transistor is a PFET. In another embodiment, the access transistor is an NFET and the shiftable threshold voltage transistor is also an NFET. The programming voltage can cause an absolute value of the threshold voltage to permanently increase by at least 50.0 millivolts.

    Method for efficiently fabricating memory cells with logic FETs and related structure
    19.
    发明授权
    Method for efficiently fabricating memory cells with logic FETs and related structure 有权
    用逻辑FET和相关结构有效地制造存储单元的方法

    公开(公告)号:US09129856B2

    公开(公告)日:2015-09-08

    申请号:US13179248

    申请日:2011-07-08

    IPC分类号: H01L27/115 H01L21/8238

    摘要: According to one exemplary embodiment, a method for concurrently fabricating a memory region with a logic region in a common substrate includes forming a lower dielectric segment in the common substrate in the memory and logic regions. The method also includes forming a polysilicon segment over the lower dielectric segment in the memory region, while concurrently forming a sacrificial polysilicon segment over the lower dielectric segment in the logic region. Furthermore, the method includes removing from the logic region the lower dielectric segment and the sacrificial polysilicon segment. The method additionally includes forming a high-k segment in the logic region over the common substrate, and in the memory region over the polysilicon segment and forming a metal segment over the high-k segment in the logic and memory regions. An exemplary structure achieved by the described exemplary method is also disclosed.

    摘要翻译: 根据一个示例性实施例,用于同时制造具有公共衬底中的逻辑区域的存储区域的方法包括在存储器和逻辑区域中的公共衬底中形成下部介电段。 该方法还包括在存储器区域中的下介电段上形成多晶硅段,同时在逻辑区域中的下介电段上同时形成牺牲多晶硅段。 此外,该方法包括从逻辑区域去除下介电段和牺牲多晶硅段。 该方法还包括在公共衬底上的逻辑区域中形成高k区段,并在多晶硅区段上的存储区域中形成高k区段,并在逻辑和存储区域中的高k区段上形成金属区段。 还公开了通过描述的示例性方法实现的示例性结构。

    Network architecture for content backup, restoring, and sharing
    20.
    发明授权
    Network architecture for content backup, restoring, and sharing 有权
    用于内容备份,恢复和共享的网络架构

    公开(公告)号:US08805787B2

    公开(公告)日:2014-08-12

    申请号:US12609816

    申请日:2009-10-30

    IPC分类号: G06F17/30

    摘要: A method may include generating a list of current files stored in a user device, wherein the list of current files includes unique file identifiers, each associated with a corresponding one of the current files. The method may further include sending the list of current files from the user device to a network device and receiving a copy list from the network device in the user device. The copy list may be generated by comparing the list of current files to a list of previously copied files, and the list of previously copied files may include unique file identifiers, each associated with a different one of the previously copied files. The method may include sending the files listed in the copy list from the user device to the network device.

    摘要翻译: 方法可以包括生成存储在用户设备中的当前文件的列表,其中当前文件的列表包括唯一的文件标识符,每个文件标识符与当前文件中的对应的一个相关联。 该方法还可以包括将当前文件的列表从用户设备发送到网络设备,并从用户设备中的网络设备接收复制列表。 可以通过将当前文件的列表与先前复制的文件的列表进行比较来生成复制列表,并且先前复制的文件的列表可以包括唯一的文件标识符,每个文件标识符与先前复制的文件中的不同的一个相关联。 该方法可以包括将复制列表中列出的文件从用户设备发送到网络设备。