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17 条记录 (耗时 0.018 秒)

    Method for exposing a semiconductor wafer
    11.
    发明申请
    Method for exposing a semiconductor wafer 失效
    曝光半导体晶片的方法

    公开(公告)号：US20060256314A1

    公开(公告)日：2006-11-16

    申请号：US11128431

    申请日：2005-05-13

    申请人： Christoph Nolscher ,  Joerg Tschischgale

    发明人： Christoph Nolscher ,  Joerg Tschischgale

    IPC分类号： G03B27/72

    CPC分类号： G03B27/72 ,  G03F7/70258

    摘要： A method of focus variation is described herein to achieve a one-step exposure of a wafer without the limitation of applying a complex y-tilt to a wafer stage. The position of the wafer surface to be exposed is periodically varied with respect to the focal plane, or vice versa. This relative movement between the focal plane, or best focus position along the optical axis and the wafer stage, or the wafer surface, is achieved by applying a movement to at least one of the reticle stage, one or more of the optical elements of the projection lens, and the wafer stage. The frequency of the movement is selected in dependence of the laser frequency (upper limit) or the scanning frequency (lower limit).

    摘要翻译： 本文描述了聚焦变化的方法以实现晶片的一步曝光，而不会对晶片台施加复杂的y倾斜。 要曝光的晶片表面的位置相对于焦平面周期性地变化，反之亦然。 通过将运动施加到标线片载物台中的至少一个，光学元件中的一个或多个光学元件或光学元件中的一个或多个来实现焦平面或沿着光轴和晶片台或晶片表面的最佳聚焦位置之间的这种相对移动 投影透镜和晶片台。 根据激光频率（上限）或扫描频率（下限）选择运动的频率。

    Method for improving a simulation model of photolithographic projection
    12.
    发明申请
    Method for improving a simulation model of photolithographic projection 有权
    改进光刻投影仿真模型的方法

    公开(公告)号：US20050114823A1

    公开(公告)日：2005-05-26

    申请号：US10995126

    申请日：2004-11-24

    申请人： Bernd Kuchler ,  Ralf Ziebold ,  Christoph Nolscher

    发明人： Bernd Kuchler ,  Ralf Ziebold ,  Christoph Nolscher

    IPC分类号： G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  G05B17/00 ,  G06F17/50

    CPC分类号： G03F7/705 ,  G03F1/36 ,  G03F7/70441

    摘要： A method is provided for improving a photolithographic simulation model of the photolithographic simulation of a pattern formed on a photomask. Proceeding from a two-dimensional simulation model that takes account of the physical-chemical processes during lithography, a frequency-dependent intensity loss is calculated which is determined by multiplication of the simulated intensity distribution in the Fourier space by a filter function. An accurate calculation of the intensity distribution in the substrate plane is obtained. This method achieves the accuracy of three-dimensional models with a significantly shorter processing duration and is further suitable in particular for the calculation of OPC structures.

    摘要翻译： 提供了一种用于改进在光掩模上形成的图案的光刻模拟的光刻仿真模型的方法。 从考虑到光刻过程中的物理化学过程的二维模拟模型出发，计算频率依赖的强度损失，其通过傅立叶空间中的模拟强度分布乘以滤波函数来确定。 获得基板平面中的强度分布的精确计算。 该方法实现了具有显着更短处理持续时间的三维模型的精度，并且特别适用于OPC结构的计算。

    Fluid-cooled fuel cell with distribution ducts
    13.
    发明授权
    Fluid-cooled fuel cell with distribution ducts 失效
    流体冷却燃料电池配有配电管道

    公开(公告)号：US6080502A

    公开(公告)日：2000-06-27

    申请号：US117149

    申请日：1998-07-23

    申请人： Christoph Nolscher ,  Arno Mattejat

    发明人： Christoph Nolscher ,  Arno Mattejat

    IPC分类号： H01M8/04007 ,  H01M8/04029 ,  H01M8/24 ,  H01M8/2465 ,  H01M2/00

    CPC分类号： H01M8/04074 ,  H01M8/24 ,  H01M8/2405 ,  H01M8/2465 ,  H01M8/04029

    摘要： The invention relates to a fluid-cooled fuel cell, in which the cell surfaces are supplied with reaction media via axial supply ducts and radial distribution ducts, the distribution ducts being located in the cell surface and running along the edge of the cell surface, with the open side toward the active surface.According to the invention, the supply and distribution ducts in a fuel-cell stack are arranged such that distribution ducts are arranged in the edge region of the cell surfaces, as a result of stacking and staggering, in such a way that the inlet of the medium to the cell surface along a distribution duct is not carried out in a point-like manner, and that the entire cell surface is uniformly supplied with medium.

    摘要翻译： PCT No.PCT / DE96 / 02451 Sec。 371日期：1998年7月23日 102（e）1998年7月23日PCT 1996年12月18日PCT PCT。 公开号WO97 / 27638 日期1997年7月31日本发明涉及流体冷却的燃料电池，其中通过轴向供应管道和径向分布管道向单元表面供应反应介质，分配管道位于电池表面并沿着 电池表面，开口侧朝向活性表面。 根据本发明，燃料电池堆中的供应和分配管道被布置成使得分配管道被布置在细胞表面的边缘区域中，这是由于堆叠和交错的结果，使得 沿着分配管道向细胞表面介质不以点状方式进行，并且整个细胞表面均匀地供给培养基。

    Method for exposing a semiconductor wafer
    14.
    发明申请
    Method for exposing a semiconductor wafer 有权
    曝光半导体晶片的方法

    公开(公告)号：US20060244937A1

    公开(公告)日：2006-11-02

    申请号：US11116439

    申请日：2005-04-28

    申请人： Christoph Nolscher ,  Andreas Jahnke

    发明人： Christoph Nolscher ,  Andreas Jahnke

    IPC分类号： G03B27/68

    CPC分类号： G03F7/70575 ,  G03F7/70241 ,  G03F7/70333

    摘要： A semiconductor wafer is exposed with a pattern from a mask or reticle in an exposure tool. The exposure tool has an adjustable lens system and a light source, which is tunable in wavelength. A first exposure is performed with a tuned first wavelength and a first setting of the lenses. Prior to performing a second exposure onto the same wafer and into the same resist layer, the wavelength of the light source is varied to a second wavelength in order to mimic a focus offset. A resulting image shift at the slit edges of the scanning system due to chromatic aberration is then corrected for by setting the lens system in dependence of the difference between the tuned first and second wavelength. Having tuned second wavelength of the light source and having set the lens system, the second exposure is performed. A continuous adjustment of the lens system based upon a continuously varying light source wavelength can be accomplished.

    摘要翻译： 半导体晶片在曝光工具中以掩模或掩模版的图案曝光。 曝光工具具有可调透镜系统和可调波长的光源。 第一曝光是通过调节的第一波长和透镜的第一设置来执行的。 在对相同的晶片和相同的抗蚀剂层进行第二次曝光之前，为了模拟聚焦偏移，光源的波长变化到第二波长。 然后通过根据调谐的第一和第二波长之间的差设置透镜系统来校正由于色差导致的扫描系统的狭缝边缘处的所得到的图像偏移。 调整光源的第二波长并设置透镜系统后，进行第二次曝光。 可以实现基于连续变化的光源波长的透镜系统的连续调节。

    Method for the photolithographic projection of a pattern onto a semiconductor wafer with an alternating phase mask
    15.
    发明申请
    Method for the photolithographic projection of a pattern onto a semiconductor wafer with an alternating phase mask 审中-公开
    用交替相位掩模将图案光刻投影到半导体晶片上的方法

    公开(公告)号：US20050287446A1

    公开(公告)日：2005-12-29

    申请号：US11157167

    申请日：2005-06-21

    申请人： Christoph Nolscher

    发明人： Christoph Nolscher

    IPC分类号： G03B27/42 ,  G03C5/00 ,  G03F1/00

    CPC分类号： G03F1/30

    摘要： A method for the photolithographic projection of a pattern onto a semiconductor wafer with an alternating phase mask includes patterning a resist layer photolithographically with a pattern on the alternating phase mask via an exposure device in order to form a resist structure corresponding to the pattern. The pattern includes first linear structure elements having a first line width and a midpoint-to-midpoint distance, the first linear structure elements being chosen such that the elements of the resist structure which correspond with the first linear structures have a width corresponding approximately to the structure resolution of the exposure device, and have a midpoint-to-midpoint distance corresponding approximately to twice the structure resolution of the exposure device. A first distance from a structure element delimiting the linear structure elements is chosen such that the width of the region of the resist structure which corresponds with the absorber-free first partial region is less than four times the structure resolution of the exposure device.

    摘要翻译： 利用交替相位掩模将图案光刻投影到半导体晶片上的方法包括通过曝光装置以交替相位掩模上的图案光刻地图案化抗蚀剂层，以形成对应于图案的抗蚀剂结构。 该图案包括具有第一线宽度和中点到中点距离的第一线性结构元件，第一线性结构元件被选择为使得与第一线性结构对应的抗蚀剂结构的元件具有对应于 曝光装置的结构分辨率，并且具有相当于曝光装置的结构分辨率的两倍的中点到中点距离。 选择限定线性结构元件的结构元件的第一距离，使得与无吸收体的第一部分区域对应的抗蚀剂结构的区域的宽度小于曝光设备的结构分辨率的四倍。