公开(公告)号：US20060222007A1

公开(公告)日：2006-10-05

申请号：US11191071

申请日：2005-07-28

申请人： Yoshiyuki Karakawa ,  Yuji Kuroki ,  Junichi Kawaguchi

发明人： Yoshiyuki Karakawa ,  Yuji Kuroki ,  Junichi Kawaguchi

IPC分类号： H04J3/22 ,  H04L12/56 ,  H04L12/26 ,  H04L1/00 ,  H04L12/28 ,  H04J3/16

CPC分类号： H04L12/42 ,  H04J3/14 ,  H04J3/1611

摘要： Provided is an RPR ring network system including: a plurality of RPR station devices; and a ring for interconnecting the plurality of RPR station devices, in which a section between adjacent RPR station devices is defined as a section of the ring, a bandwidth different from bandwidths of other sections are allocated to at least one section, and each of the RPR station devices transmits a frame, in the case of transmitting the frame to the other RPR station device through the ring, by a transmission bandwidth with a minimum value of a bandwidth allocated to a section through which the frame flows set as an upper limit.

摘要翻译： 提供了一种RPR环网系统，包括：多个RPR站设备; 以及用于互连多个RPR站设备的环，其中相邻RPR站设备之间的区段被定义为环的一部分，与其他区段的带宽不同的带宽被分配给至少一个区段，并且每个 RPR站设备在通过环向另一个RPR站设备发送帧的情况下，通过分配给帧流量设置为上限的区段的带宽的最小值的传输带宽来发送帧。

公开(公告)号：US6031838A

公开(公告)日：2000-02-29

申请号：US905647

申请日：1997-08-04

申请人： Kenichi Okabe ,  Junichi Kawaguchi ,  Hiroko Yoshino ,  Masakazu Sato ,  Hiroshi Ishiwata

发明人： Kenichi Okabe ,  Junichi Kawaguchi ,  Hiroko Yoshino ,  Masakazu Sato ,  Hiroshi Ishiwata

IPC分类号： H04Q3/00 ,  H04L12/713 ,  H04L12/813 ,  H04L12/879 ,  H04L12/947 ,  H04L12/951 ,  H04Q11/04 ,  H04L12/56

CPC分类号： H04L49/309 ,  H04L49/30 ,  H04L49/3009 ,  H04Q11/0478 ,  H04L2012/5672 ,  H04L2012/5679 ,  H04L49/503

摘要： An ATM switching system concentrates cell streams, which are output by respective ones of a plurality of line interfaces, by a concentrator, enters a resulting cell stream into an ATM switch unit, deconcentrates cells, which have been switched by the ATM switch unit, by a deconcentrator on a per line interface basis and sends the cells to lines. Each line interface converts a VPI/VCI included in the header of a cell that has entered from a line to an internal cell address having a number of bits smaller than the number of bits of the VPI/VCI. Each unit in the ATM switching system performs management of various data and controls cell switching based upon a converted cell address without relying upon the VPI/VCI. The line interface restores an internal cell address, which is included in the header of a cell that enters from the side of the ATM switch, to the VPI/VCI and sends the cell to a line.

摘要翻译： ATM交换系统通过集中器集中由多个线路接口中的各个线路接口输出的信元流，将所得到的信元流输入ATM交换单元，对由ATM交换单元切换的信元进行分解，由 在每个线路接口基础上的分解器，并将单元格发送到线路。 每行线路接口将包含在从一行输入的单元的头部中的VPI / VCI转换成具有小于VPI / VCI的位数的位数的内部单元地址。 ATM交换系统中的每个单元执行各种数据的管理，并且基于转换的小区地址来控制小区切换，而不依赖于VPI / VCI。 线路接口将包含在从ATM交换机侧进入的小区的报头中的内部小区地址恢复到VPI / VCI，并将该小区发送到一条线路。

公开(公告)号：US5563093A

公开(公告)日：1996-10-08

申请号：US431822

申请日：1995-05-01

申请人： Munetaka Koda ,  Yoshikatsu Shida ,  Junichi Kawaguchi ,  Takehiro Murakami ,  Yoshio Kaneko

发明人： Munetaka Koda ,  Yoshikatsu Shida ,  Junichi Kawaguchi ,  Takehiro Murakami ,  Yoshio Kaneko

IPC分类号： H01L21/20 ,  H01L21/28 ,  H01L21/8238 ,  H01L21/265 ,  H01L21/70 ,  H01L27/00

CPC分类号： H01L21/2022 ,  H01L21/28052 ,  H01L21/823828

摘要： The present invention provides the method of manufacturing a dual-gate CMOS device which has high transconductance and improved breakdown voltage, in which depletion in the interface between a gate oxide and a gate electrode is prevented without the increase of the steps of process.A gate oxide film (5) formed on a semiconductor substrate (1) is washed with an aqueous solution, or exposed to a gas atomosphere containing hydrogen, and an amorphous silicon film (3) is formed on the whole surface of the gate oxide film (5). The amorphous silicon film (3) is then crystallized. Alternatively, after a silicon oxide film (53) or a silicon nitrided film is formed on the amorphous silicon film (3), the amorhpous silicon film (3) is crystallized.

摘要翻译： 本发明提供制造具有高跨导和改善的击穿电压的双栅极CMOS器件的方法，其中在不增加处理步骤的情况下，防止栅极氧化物和栅电极之间的界面的耗尽。 形成在半导体基板（1）上的栅极氧化膜（5）用水溶液洗涤或暴露于含有氢的气体大气圈，并且在栅极氧化膜的整个表面上形成非晶硅膜（3） （5）。 然后使非晶硅膜（3）结晶。 或者，在非晶硅膜（3）上形成氧化硅膜（53）或硅氮化膜之后，使非阳极硅膜（3）结晶化。

公开(公告)号：US5262363A

公开(公告)日：1993-11-16

申请号：US12803

申请日：1993-02-02

申请人： Shuji Yoshida ,  Yasuyuki Tsutsumi ,  Satoru Noudomi ,  Junichi Kawaguchi

发明人： Shuji Yoshida ,  Yasuyuki Tsutsumi ,  Satoru Noudomi ,  Junichi Kawaguchi

IPC分类号： C03C8/02 ,  C03C8/14 ,  C03C3/091 ,  C03C3/095 ,  C03C3/097

CPC分类号： C03C8/02

摘要： An overglaze color for pottery. Pigment is added to a colorless frit which has the composition (wt %):(1) silicon dioxide 30 to 70(2) alumina 0.1 to 15(3) boron oxide 20 to 40(4) alkali metal oxide 2 to 17(5) one or more oxide selected from lanthanum oxide, niobium oxide, tantalum oxide, hafnium oxide, scandium oxide, samarium oxide, europium oxide, gadolinium oxide, thulium oxide, ytterbium oxide, lutetium oxide, terbium oxide, or dysprosium oxide 0.1 to 15and having a thermal expansion coefficient of 5.0.times.10.sup.-6 /.degree. C. to 7.0.times.10.sup.-6 /.degree. C. at 50.degree. to 350.degree. C. and a thermal softeningpVperature of 500.degree. to 640.degree. C. The overglaze color according to the invention causes no cracking, increases the color developing property of the pigment and has high chemical durability.

摘要翻译： 陶器的釉面颜色。 将颜料加入到具有组成（重量％）的无色玻璃料中：（1）二氧化硅30至70（2）氧化铝0.1至15（3）氧化硼20至40（4）碱金属氧化物2至17（5 ）选自氧化镧，氧化铌，氧化钽，氧化铪，氧化钪，氧化钐，氧化铕，氧化钆，氧化oxide，氧化镱，氧化镥，氧化铽或氧化镝的一种以上的氧化物，0.1〜15， 在50至350℃下的热膨胀系数为5.0×10 -6 /℃至7.0×10 -6 /℃，热软化温度为500至640℃。根据本发明的釉面颜色 不会发生龟裂，增加颜料的显色性，并且具有高的化学耐久性。