公开(公告)号：US20080179644A1

公开(公告)日：2008-07-31

申请号：US12012049

申请日：2008-01-31

申请人： Hyuck-In Kwon ,  Jung-Chak Ahn ,  Yi-Tae Kim ,  Keun-Chan Yuk

发明人： Hyuck-In Kwon ,  Jung-Chak Ahn ,  Yi-Tae Kim ,  Keun-Chan Yuk

IPC分类号： H01L27/146

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14689 ,  H01L31/035281

摘要： An image sensor includes a photosensitive device and a drive transistor for generating an electrical signal from charge accumulated in the photosensitive device. The drive transistor includes a source region of a first conductivity type and an asymmetry junction region abutting a portion of the source region and being of a second conductivity type that is opposite of the first conductivity type. The drive transistor is biased such that the asymmetry junction region reduces an effective channel length of the drive transistor.

摘要翻译： 图像传感器包括感光装置和驱动晶体管，用于从积累在感光装置中的电荷产生电信号。 驱动晶体管包括第一导电类型的源极区域和与源极区域的一部分相邻并且与第一导电类型相反的第二导电类型的不对称接合区域。 驱动晶体管被偏压使得不对称结区域减小驱动晶体管的有效沟道长度。

公开(公告)号：US08941199B2

公开(公告)日：2015-01-27

申请号：US13431306

申请日：2012-03-27

申请人： Kyung-Ho Lee ,  Jung-Chak Ahn

发明人： Kyung-Ho Lee ,  Jung-Chak Ahn

IPC分类号： H01L31/02 ,  H01L31/0232 ,  H01L27/146

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/1464

摘要： An image sensor includes a semiconductor substrate, a plurality of photo detecting elements and a backside protection pattern. The plurality of photo detecting elements may be formed in an upper portion of the semiconductor substrate. The plurality of photo detecting elements may be separate from each other. The backside protection pattern may be formed in a lower portion of the semiconductor substrate between the plurality of photo detecting elements.

摘要翻译： 图像传感器包括半导体衬底，多个光电检测元件和背面保护图案。 多个光电检测元件可以形成在半导体衬底的上部。 多个光检测元件可以彼此分开。 背面保护图案可以形成在多个光检测元件之间的半导体衬底的下部。

公开(公告)号：US08614470B2

公开(公告)日：2013-12-24

申请号：US13541343

申请日：2012-07-03

申请人： Kyung-Ho Lee ,  Dong-Yoon Jang ,  Jung-Chak Ahn ,  Moo-Sup Lim

发明人： Kyung-Ho Lee ,  Dong-Yoon Jang ,  Jung-Chak Ahn ,  Moo-Sup Lim

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14647 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627

摘要： A unit pixel of a CMOS image sensor include a photodiode that transforms light to an electric charge, and accumulates the electric charge, and a plurality of transistors that generate an electric signal based on the accumulated electric charge. The photodiode has a slope shape based on incident angle of the light in a semiconductor substrate.

摘要翻译： CMOS图像传感器的单位像素包括将光转换成电荷并累积电荷的光电二极管，以及基于累积电荷产生电信号的多个晶体管。 光电二极管具有基于半导体衬底中的光的入射角的倾斜形状。

公开(公告)号：US08309995B2

公开(公告)日：2012-11-13

申请号：US12820787

申请日：2010-06-22

申请人： Kyung-Ho Lee ,  Dong-Yoon Jang ,  Jung-Chak Ahn ,  Moo-Sup Lim

发明人： Kyung-Ho Lee ,  Dong-Yoon Jang ,  Jung-Chak Ahn ,  Moo-Sup Lim

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14647 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627

摘要： A unit pixel of a CMOS image sensor include a photodiode that transforms light to an electric charge, and accumulates the electric charge, and a plurality of transistors that generate an electric signal based on the accumulated electric charge. The photodiode has a slope shape based on incident angle of the light in a semiconductor substrate.

摘要翻译： CMOS图像传感器的单位像素包括将光转换成电荷并累积电荷的光电二极管，以及基于累积电荷产生电信号的多个晶体管。 光电二极管具有基于半导体衬底中的光的入射角的斜率形状。

公开(公告)号：US20110037883A1

公开(公告)日：2011-02-17

申请号：US12801740

申请日：2010-06-23

申请人： Kyung-Ho Lee ,  Jung-Chak Ahn ,  Dong-Yoon Jang ,  Wook Lee ,  Tae-Sub Jung

发明人： Kyung-Ho Lee ,  Jung-Chak Ahn ,  Dong-Yoon Jang ,  Wook Lee ,  Tae-Sub Jung

IPC分类号： H04N9/04

CPC分类号： H04N9/045 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687

摘要： Image sensors including a semiconductor substrate, a plurality of photo detecting elements, a dielectric layer, a plurality of color filters, and a plurality of micro lenses. The photo detecting elements may be in the semiconductor substrate and may convert an incident light into an electric signal. The dielectric layer may be on the semiconductor substrate and may include a plurality of photo blocking regions on regions between the photo detecting elements. The color filters may be on the dielectric layer and may be disposed corresponding to the plurality of photo detecting elements, respectively. The micro lenses may be on the plurality of color filters and may be disposed corresponding to the plurality of photo detecting elements, respectively.

摘要翻译： 图像传感器包括半导体衬底，多个光电检测元件，电介质层，多个滤色器和多个微透镜。 光检测元件可以在半导体衬底中，并且可以将入射光转换成电信号。 电介质层可以在半导体衬底上并且可以包括在光检测元件之间的区域上的多个光阻挡区域。 滤色器可以在电介质层上，并且可以分别对应于多个光检测元件设置。 微透镜可以在多个滤色器上，并且可以分别对应于多个光检测元件设置。

公开(公告)号：US20110018042A1

公开(公告)日：2011-01-27

申请号：US12820787

申请日：2010-06-22

申请人： Kyung-Ho Lee ,  Dong-Yoon Jang ,  Jung-Chak Ahn ,  Moo-Sup Lim

发明人： Kyung-Ho Lee ,  Dong-Yoon Jang ,  Jung-Chak Ahn ,  Moo-Sup Lim

IPC分类号： H01L27/146 ,  H01L31/0232

CPC分类号： H01L27/14647 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627

摘要： A unit pixel of a CMOS image sensor include a photodiode that transforms light to an electric charge, and accumulates the electric charge, and a plurality of transistors that generate an electric signal based on the accumulated electric charge. The photodiode has a slope shape based on incident angle of the light in a semiconductor substrate.

摘要翻译： CMOS图像传感器的单位像素包括将光转换成电荷并累积电荷的光电二极管，以及基于累积电荷产生电信号的多个晶体管。 光电二极管具有基于半导体衬底中的光的入射角的斜率形状。

公开(公告)号：US08872298B2

公开(公告)日：2014-10-28

申请号：US13173053

申请日：2011-06-30

申请人： Jung-Chak Ahn ,  Kyung-Ho Lee

发明人： Jung-Chak Ahn ,  Kyung-Ho Lee

IPC分类号： H01L31/0232 ,  H01L27/146

CPC分类号： H01L27/14621 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14685

摘要： A unit pixel array of an image sensor includes a semiconductor substrate having a plurality of photodiodes, an interlayer insulation layer on a front-side of the semiconductor substrate, and a plurality of micro lenses on a back-side of the semiconductor substrate. The unit pixel array of the image sensor further includes a wavelength adjustment film portion between each of the micro lenses and the back-side of the semiconductor substrate such that a plurality of wavelength adjustment film portions correspond with the plurality of micro lenses.

摘要翻译： 图像传感器的单位像素阵列包括具有多个光电二极管的半导体衬底，在半导体衬底的正面上的层间绝缘层和在半导体衬底的背面上的多个微透镜。 图像传感器的单位像素阵列还包括在每个微透镜和半导体衬底的背面之间的波长调节膜部分，使得多个波长调节膜部分对应于多个微透镜。

公开(公告)号：US08537255B2

公开(公告)日：2013-09-17

申请号：US12801740

申请日：2010-06-23

申请人： Kyung-Ho Lee ,  Jung-Chak Ahn ,  Dong-Yoon Jang ,  Wook Lee ,  Tae-Sub Jung

发明人： Kyung-Ho Lee ,  Jung-Chak Ahn ,  Dong-Yoon Jang ,  Wook Lee ,  Tae-Sub Jung

IPC分类号： H04N3/14 ,  H04N9/083 ,  H04N5/335 ,  H04N9/04

CPC分类号： H04N9/045 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687

摘要： Image sensors including a semiconductor substrate, a plurality of photo detecting elements, a dielectric layer, a plurality of color filters, and a plurality of micro lenses. The photo detecting elements may be in the semiconductor substrate and may convert an incident light into an electric signal. The dielectric layer may be on the semiconductor substrate and may include a plurality of photo blocking regions on regions between the photo detecting elements. The color filters may be on the dielectric layer and may be disposed corresponding to the plurality of photo detecting elements, respectively. The micro lenses may be on the plurality of color filters and may be disposed corresponding to the plurality of photo detecting elements, respectively.

摘要翻译： 图像传感器包括半导体衬底，多个光电检测元件，电介质层，多个滤色器和多个微透镜。 光检测元件可以在半导体衬底中，并且可以将入射光转换成电信号。 电介质层可以在半导体衬底上并且可以包括在光检测元件之间的区域上的多个光阻挡区域。 滤色器可以在电介质层上，并且可以分别对应于多个光检测元件设置。 微透镜可以在多个滤色器上，并且可以分别对应于多个光检测元件设置。

公开(公告)号：US20120248560A1

公开(公告)日：2012-10-04

申请号：US13431306

申请日：2012-03-27

申请人： Kyung-Ho Lee ,  Jung-Chak Ahn

发明人： Kyung-Ho Lee ,  Jung-Chak Ahn

IPC分类号： H01L31/0232 ,  H01L31/02

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/1464

摘要： An image sensor includes a semiconductor substrate, a plurality of photo detecting elements and a backside protection pattern. The plurality of photo detecting elements may be formed in an upper portion of the semiconductor substrate. The plurality of photo detecting elements may be separate from each other. The backside protection pattern may be formed in a lower portion of the semiconductor substrate between the plurality of photo detecting elements.

摘要翻译： 图像传感器包括半导体衬底，多个光电检测元件和背面保护图案。 多个光电检测元件可以形成在半导体衬底的上部。 多个光检测元件可以彼此分开。 背面保护图案可以形成在多个光检测元件之间的半导体衬底的下部。

公开(公告)号：US09034682B2

公开(公告)日：2015-05-19

申请号：US13177253

申请日：2011-07-06

申请人： Eun-Sub Shim ,  Jung-Chak Ahn ,  Bum-Suk Kim ,  Kyung-Ho Lee

发明人： Eun-Sub Shim ,  Jung-Chak Ahn ,  Bum-Suk Kim ,  Kyung-Ho Lee

IPC分类号： H01L31/0232 ,  H01L27/146

CPC分类号： H01L27/1464 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14687

摘要： A method of manufacturing a backside illuminated image sensor, including forming a first isolation layer in a first semiconductor layer, such that the first isolation layer defines pixels of a pixel array in the first semiconductor layer, forming a second semiconductor layer on a first surface of the first semiconductor layer, forming a second isolation layer in the second semiconductor layer, such that the second isolation layer defines active device regions in the second semiconductor layer, forming photo detectors and circuit devices by implanting impurities into a first surface of the second semiconductor layer, the first surface of the second semiconductor layer facing away from the first semiconductor layer, forming a wiring layer on the first surface of the second semiconductor layer, and forming a light filter layer on a second surface of the first semiconductor layer.

摘要翻译： 一种制造背面照射图像传感器的方法，包括在第一半导体层中形成第一隔离层，使得第一隔离层限定第一半导体层中的像素阵列的像素，在第一半导体层的第一表面上形成第二半导体层 所述第一半导体层在所述第二半导体层中形成第二隔离层，使得所述第二隔离层限定所述第二半导体层中的有源器件区域，通过将杂质注入到所述第二半导体层的第一表面中来形成光检测器和电路器件 所述第二半导体层的第一表面背离所述第一半导体层，在所述第二半导体层的所述第一表面上形成布线层，并且在所述第一半导体层的第二表面上形成滤光器层。