公开(公告)号：US11634817B2

公开(公告)日：2023-04-25

申请号：US16863835

申请日：2020-04-30

Applicant: Lam Research Corporation

Inventor： Troy Alan Gomm ,  Nick Ray Linebarger, Jr.

IPC: C23C16/52 ,  H01L21/687 ,  C23C16/458 ,  C23C16/505 ,  H01L21/67 ,  H01L21/683 ,  B32B37/10 ,  H01J37/32

Abstract: In various examples, the disclosed subject matter includes a substrate pedestal that includes a platen formed from a ceramic material and having an upper surface to support a substrate during processing. A stem, formed from a ceramic material, has an upper-stem flange upon which the platen is mechanically coupled. The stem has an interior portion. A backside gas-delivery tube, formed from a ceramic material, is located in the interior portion of the stem. The backside gas-delivery tube includes an upper gas-tube flange that is located between a lower surface of the platen and an upper surface of the upper-stem flange. The backside gas-delivery tube is in fluid communication with at least one backside-gas passage of the platen and is arranged to supply a backside gas to a region below a lower surface of the substrate during processing. Other examples of apparatuses and methods of making and using the apparatuses are included.

公开(公告)号：US20220189817A1

公开(公告)日：2022-06-16

申请号：US17438932

申请日：2020-03-12

Applicant: Lam Research Corporation

Inventor： Nick Ray Linebarger, Jr. ,  Prahalad Narasinghdas Agarwal ,  Ravikumar Sadashiv Patil ,  Damodar Rajararn Shanbhag

IPC: H01L21/687 ,  B23K20/12 ,  H01L21/67

Abstract: In an example, a showerhead pedestal assembly for a substrate processing chamber is provided. The showerhead pedestal assembly includes a faceplate. A platen is disposed within the faceplate and includes a heater element extending through at least one groove in the faceplate. The at least one groove is profiled to accept at least one portion of the heater element. A periphery of the platen is joined to an interior surface of the faceplate by a friction stir welded joint.

公开(公告)号：US09738975B2

公开(公告)日：2017-08-22

申请号：US14710132

申请日：2015-05-12

Applicant: Lam Research Corporation

Inventor： Troy Alan Gomm ,  Nick Ray Linebarger, Jr.

IPC: H01L21/00 ,  C23C16/458 ,  C23C16/505 ,  C23C16/52 ,  H01L21/687 ,  H01L21/67 ,  H01L21/683 ,  B32B37/10

CPC classification number: C23C16/4586 ,  B32B37/1018 ,  B32B2457/00 ,  C23C16/4581 ,  C23C16/505 ,  C23C16/52 ,  H01L21/67103 ,  H01L21/6831 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792

Abstract: A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a platen made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material having an upper stem flange that supports the platen, and a backside gas tube made of ceramic material that is located in an interior of the stem. The backside gas tube includes an upper gas tube flange that is located between a lower surface of the platen and an upper surface of the upper stem flange wherein the backside gas tube is in fluid communication with at least one backside gas passage of the platen and the backside gas tube is configured to supply a backside gas to a region below a lower surface of a semiconductor substrate that is to be supported on the upper surface of the platen during processing.