CURING AND BONDING TOOL
    1.
    发明公开

    公开(公告)号:US20240116285A1

    公开(公告)日:2024-04-11

    申请号:US18479846

    申请日:2023-10-03

    申请人: ROLLS-ROYCE plc

    发明人: Charlie RICCARD

    摘要: A tool for curing and bonding a honeycomb stack with void filler. The tool has a first tool piece with a cavity for receiving layers of unfilled honeycomb material and a second tool piece with a cavity for receiving at least one layer of void-filled honeycomb. The tool also has a compression seal arrangement that creates gas-tight seals between the first tool piece, second tool piece, and a barrier layer positioned between them, with a further seal covering the cavity of the first tool piece to form a gas-tight sealed volume including the first cavity, a pressure plate to cover the cavity of the second tool piece to apply pressure to the void-filled honeycomb, with a further seal to cover the pressure plate to form a gas-tight sealed volume including the second cavity.

    SUBSTRATE PEDESTAL INCLUDING BACKSIDE GAS-DELIVERY TUBE

    公开(公告)号:US20230220549A1

    公开(公告)日:2023-07-13

    申请号:US18123153

    申请日:2023-03-17

    摘要: A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a platen made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material having an upper stem flange that supports the platen, and a backside gas tube made of ceramic material that is located in an interior of the stem. The backside gas tube includes an upper gas tube flange that is located between a lower surface of the platen and an upper surface of the upper stem flange wherein the backside gas tube is in fluid communication with at least one backside gas passage of the platen and the backside gas tube is configured to supply a backside gas to a region below a lower surface of a semiconductor substrate that is to be supported on the upper surface of the platen during processing.