公开(公告)号：US20230110764A1

公开(公告)日：2023-04-13

申请号：US17962783

申请日：2022-10-10

Applicant: LG Display Co., Ltd.

Inventor： ChanYong JEONG ,  KyungChul OK ,  Dohyung LEE ,  HongRak CHOI

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/66 ,  H01L27/32

Abstract: A thin film transistor, a fabricating method of the thin film transistor and a display device including the thin film transistor are provided, in which the thin film transistor includes a reducing pattern on a substrate, an active layer that is in contact with the reducing pattern, and a gate electrode at least partially overlapped with the active layer, wherein the active layer includes a channel portion, a first conductorization portion connected to one side of the channel portion, and a second conductorization portion connected to the other side of the channel portion, and the channel portion overlaps the gate electrode and does not overlap the reducing pattern.

公开(公告)号：US20220173130A1

公开(公告)日：2022-06-02

申请号：US17671452

申请日：2022-02-14

Applicant: LG Display Co. Ltd.

Inventor： Kwanghwan JI ,  HongRak CHOI ,  Jeyong JEON ,  Jaeyoon PARK

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L49/02 ,  H01L29/786

Abstract: A panel comprises a substrate; a transistor disposed on the substrate and including: a source electrode, a drain electrode, a gate electrode, a gate insulation layer, an active layer, an auxiliary source electrode configured to electrically connect one end of the active layer to the source electrode, and an auxiliary drain electrode configured to electrically connect an other end of the active layer to the drain electrode; and a capacitor disposed on the substrate and including a first plate and a second plate. The first plate of the capacitor is made of a same material as the auxiliary source electrode and the auxiliary drain electrode.