公开(公告)号：US20230165057A1

公开(公告)日：2023-05-25

申请号：US17975402

申请日：2022-10-27

Applicant: LG Display Co., Ltd.

Inventor： Younghyun KO ,  ChanYong JEONG ,  KyungChul OK

IPC: H01L27/32

CPC classification number: H01L27/3262 ,  H01L27/3272 ,  H01L27/1225

Abstract: A thin film transistor, a thin film transistor substrate including the thin film transistor and a display device are provided. The thin film transistor includes a first active layer, a first auxiliary gate electrode and a first gate electrode, wherein the first active layer includes a first channel portion, a first connection portion that is in contact with one side of the first channel portion, and a second connection portion that is in contact with the other side of the first channel portion.

公开(公告)号：US20230110764A1

公开(公告)日：2023-04-13

申请号：US17962783

申请日：2022-10-10

Applicant: LG Display Co., Ltd.

Inventor： ChanYong JEONG ,  KyungChul OK ,  Dohyung LEE ,  HongRak CHOI

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/66 ,  H01L27/32

Abstract: A thin film transistor, a fabricating method of the thin film transistor and a display device including the thin film transistor are provided, in which the thin film transistor includes a reducing pattern on a substrate, an active layer that is in contact with the reducing pattern, and a gate electrode at least partially overlapped with the active layer, wherein the active layer includes a channel portion, a first conductorization portion connected to one side of the channel portion, and a second conductorization portion connected to the other side of the channel portion, and the channel portion overlaps the gate electrode and does not overlap the reducing pattern.

公开(公告)号：US20230145843A1

公开(公告)日：2023-05-11

申请号：US17876101

申请日：2022-07-28

Applicant: LG DISPLAY CO., LTD.

Inventor： HongRak CHOI ,  Dohyung LEE ,  ChanYong JEONG ,  KyungChul OK

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/1255

Abstract: A display device includes a main active layer positioned on a substrate includes a channel area, a first conductorized area positioned on a first side of the channel area, and a second conductorized area positioned on a second side of the channel area, a sacrificial active layer is positioned on the main active layer, a gate insulating film is positioned on the sacrificial active layer, a first electrode is positioned on the sacrificial active layer, a portion of the first electrode overlaps the first conductorized area of the main active layer, a second electrode is positioned on the sacrificial active layer, a portion of the second electrode overlaps the second conductorized area of the main active layer, and a third electrode positioned on the gate insulating film overlaps the channel area of the main active layer.

公开(公告)号：US20240224592A1

公开(公告)日：2024-07-04

申请号：US18454273

申请日：2023-08-23

Applicant: LG Display Co., Ltd.

Inventor： DaeHwan KIM ,  Jaeman JANG ,  Uyhyun CHOI ,  Min-Gu KANG ,  KyungChul OK ,  SeungChan CHOI

IPC: H10K59/121 ,  G09G3/3233 ,  H10K59/12 ,  H10K59/126

CPC classification number: H10K59/1213 ,  G09G3/3233 ,  H10K59/1201 ,  H10K59/126 ,  G09G2300/0842

Abstract: A thin film transistor, a manufacturing method of the thin film transistor and display apparatus including the thin film transistor are provided. The thin film transistor comprises an active layer and a gate electrode that partially overlaps the active layer, wherein the active layer includes a channel portion, a first connection portion contacting one side, namely a first side, of the channel portion and a second connection portion spaced apart from the first connection portion and contacting the other side, namely a second side of the channel portion, wherein the channel portion includes a first channel part overlapping the gate electrode and a second channel part not overlapping the gate electrode.

公开(公告)号：US20210202755A1

公开(公告)日：2021-07-01

申请号：US17124344

申请日：2020-12-16

Applicant: LG Display Co., Ltd.

Inventor： KyungChul OK ,  JungSeok SEO ,  PilSang YUN ,  Jiyong NOH ,  Jaeman JANG ,  InTak CHO

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/32

Abstract: Disclosed is a thin film transistor, a method for manufacturing the same and a display apparatus comprising the same, wherein the thin film transistor includes a first insulating layer on a substrate, an active layer on the first insulating layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer has a single crystal structure of an oxide semiconductor material, and an upper surface of the first insulating layer which contacts the active layer is an oxygen (O) layer made of oxygen (O).