公开(公告)号：US20230127842A1

公开(公告)日：2023-04-27

申请号：US17970576

申请日：2022-10-21

Applicant: LG Display Co., Ltd.

Inventor： Min-Gu KANG ,  Younghyun KO ,  HongRak CHOI

IPC: H01L27/12

Abstract: A thin film transistor substrate and a display device including the same are provided. The thin film transistor substrate includes a first thin film transistor and a second thin film transistor on a base substrate, wherein the first thin film transistor includes a first active layer on the base substrate, a first conductive material layer on the first active layer, and a first gate electrode spaced apart from the first active layer and at least partially overlapped with the first active layer, and the second thin film transistor includes a second active layer on the base substrate, a second conductive material layer on the second active layer, and a second gate electrode spaced apart from the second active layer and at least partially overlapped with the second active layer.

公开(公告)号：US20240222518A1

公开(公告)日：2024-07-04

申请号：US18540557

申请日：2023-12-14

Applicant: LG Display Co., Ltd.

Inventor： JuHeyuck BAECK ,  YoungHyun KO ,  DoHyung LEE ,  HongRak CHOI ,  ChanYong JEONG

IPC: H01L29/786 ,  H10K59/121

CPC classification number: H01L29/7869 ,  H01L29/78633 ,  H01L29/78645 ,  H10K59/1213

Abstract: Embodiments of the present disclosure relate to a display device, which in more detail includes a substrate, a first gate electrode on the substrate, a first gate insulating film on the first gate electrode, an oxide semiconductor layer on the first gate insulating film, a second gate insulating film on the oxide semiconductor layer, a second gate electrode on the second gate insulating film, a first interface layer between the first gate insulating film and the oxide semiconductor layer, and a second interface layer between the second gate insulating film and the oxide semiconductor layer, wherein the first interface layer and the second interface layer contain mutually-different amounts of oxygen, thereby being able to provide a transistor structure having high reliability.

公开(公告)号：US20180151606A1

公开(公告)日：2018-05-31

申请号：US15824974

申请日：2017-11-28

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  HongRak CHOI ,  PilSang YUN ,  HyungJoon KOO ,  Kwanghwan JI ,  Jaeyoon PARK

IPC: H01L27/12 ,  H01L51/56 ,  H01L27/32 ,  H01L29/49

CPC classification number: H01L27/1288 ,  H01L27/0733 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/78645 ,  H01L29/78696 ,  H01L51/56 ,  H01L2924/1426

Abstract: Disclosed are a transistor substrate, an organic light emitting display panel including the same, a method of manufacturing the transistor substrate, and an organic light emitting display device including the organic light emitting display panel, in which a driving transistor and a switching transistor are provided and each include an oxide semiconductor of which both ends are covered by an insulation layer, and a gate of the driving transistor and a gate of the switching transistor are provided on different layers.

公开(公告)号：US20250048738A1

公开(公告)日：2025-02-06

申请号：US18783354

申请日：2024-07-24

Applicant: LG Display Co., Ltd.

Inventor： Dohyun KWAK ,  Dohyung LEE ,  HongRak CHOI ,  GaWon YANG

IPC: H01L27/12

Abstract: A thin film transistor and a display apparatus including the same are provided. The thin film transistor includes an active layer, a sub-conductive material layer on the active layer, a gate electrode spaced apart from the active layer and at least partially overlapping the active layer, and a conductive material layer on the active layer. The active layer includes a channel portion partially overlapping the gate electrode, a first connection portion connected to one side of the channel portion, and a second connection portion connected to the other side of the channel portion. The sub-conductive material layer includes a source conductive material layer on the first connection portion, and a drain conductive material layer on the second connection portion. The conductive material layer is disposed on the channel portion and is disposed on the same layer as the sub-conductive material layer.

公开(公告)号：US20240188331A1

公开(公告)日：2024-06-06

申请号：US18376565

申请日：2023-10-04

Applicant: LG Display Co., Ltd.

Inventor： HongRak CHOI ,  JuHeyuck BAECK ,  Dohyung LEE ,  Younghyun KO ,  ChanYong JEONG

IPC: H10K59/121 ,  G09G3/32

CPC classification number: H10K59/1216 ,  G09G3/32 ,  H10K59/1213 ,  G09G2300/0842

Abstract: A display panel includes a substrate, a first storage capacitor electrode disposed on the substrate, a buffer layer disposed on the first storage capacitor electrode, an active layer disposed on the buffer layer and including a first area, a second area, and a channel area disposed between the first area and the second area, a gate insulation film disposed on the active layer, a gate electrode disposed on the gate insulation film and overlapping with the channel area, an inter-layer insulation film disposed on the gate electrode, and a metal layer disposed on the inter-layer insulation film, wherein the first area and the second area of the active layer are conductive areas, and wherein a conductive auxiliary layer overlapping with at least a portion of each of the first area and the second area and not overlapping with the channel area is included on the substrate, thereby mitigating the step in the area where the storage capacitor electrodes are disposed to prevent a short circuit.

公开(公告)号：US20230145843A1

公开(公告)日：2023-05-11

申请号：US17876101

申请日：2022-07-28

Applicant: LG DISPLAY CO., LTD.

Inventor： HongRak CHOI ,  Dohyung LEE ,  ChanYong JEONG ,  KyungChul OK

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/1255

Abstract: A display device includes a main active layer positioned on a substrate includes a channel area, a first conductorized area positioned on a first side of the channel area, and a second conductorized area positioned on a second side of the channel area, a sacrificial active layer is positioned on the main active layer, a gate insulating film is positioned on the sacrificial active layer, a first electrode is positioned on the sacrificial active layer, a portion of the first electrode overlaps the first conductorized area of the main active layer, a second electrode is positioned on the sacrificial active layer, a portion of the second electrode overlaps the second conductorized area of the main active layer, and a third electrode positioned on the gate insulating film overlaps the channel area of the main active layer.

公开(公告)号：US20250048739A1

公开(公告)日：2025-02-06

申请号：US18783662

申请日：2024-07-25

Applicant: LG DISPLAY CO., LTD.

Inventor： ChanYong JEONG ,  JuHeyuck BAECK ,  Dohyung LEE ,  Younghyun KO ,  HongRak CHOI ,  Dohyun KWAK

IPC: H01L27/12 ,  H01L25/16

Abstract: A thin film transistor substrate includes a thin film transistor, on a substrate, including an active layer; a conductive material layer; and a gate electrode spaced apart and partially overlapping the active layer. The active layer includes a channel area partially overlapping the gate electrode, and a source area and a drain area connected to respective sides of the channel area. The conductive material layer includes a first and second conductive material layer respectively on the source drain areas. The first conductive material layer overlaps at least a portion of the channel area. The active layer includes an active hole in which the active layer is absent within an area defined by the active layer, and, in a plan view, the active hole extends from the channel area to the drain area.

公开(公告)号：US20250031410A1

公开(公告)日：2025-01-23

申请号：US18763082

申请日：2024-07-03

Applicant: LG Display Co., Ltd.

Inventor： Dohyung LEE ,  HongRak CHOI ,  Dohyun KWAK ,  JuHeyuck BAECK

IPC: H01L29/786 ,  H01L29/66 ,  H10K59/121 ,  H10K59/126

Abstract: A thin film transistor, and a method for manufacturing the same and a display apparatus comprising the same are provided. The thin film transistor includes a light shielding layer, an active layer on the light shielding layer, a gate electrode spaced apart from the active layer and overlapping at least a portion of the active layer, and an internal bridge electrically connecting the light shielding layer and the gate electrode being insulated from the active layer. The internal bridge overlaps the gate electrode and penetrates the active layer along a direction from the gate electrode to the light shielding layer. In addition, one embodiment of the present disclosure provides a display apparatus including the thin film transistor.

公开(公告)号：US20240162239A1

公开(公告)日：2024-05-16

申请号：US18381525

申请日：2023-10-18

Applicant: LG Display Co., Ltd.

Inventor： Dohyung LEE ,  ChanYong JEONG ,  JuHeyuck BAECK ,  Younghyun KO ,  HongRak CHOI

IPC: H01L27/12 ,  H01L21/02

CPC classification number: H01L27/124 ,  H01L21/02414 ,  H01L27/1218 ,  H01L27/1225 ,  H10K59/1213

Abstract: Discussed are a display panel and a display device including thin film transistors having high reliability and a high current producing characteristic. In one example, the display panel includes a first active layer disposed on a substrate and including a first channel region, a second active layer overlapping a portion of the first active layer and including a second channel region not overlapping the first channel region of the first active layer, first and second electrodes disposed in respective portions of the first and second active layers, respectively, and spaced apart from each other, a gate insulating layer disposed in respective portions of upper surfaces of the first and second active layers, and a third electrode disposed on the gate insulating layer.

公开(公告)号：US20240099063A1

公开(公告)日：2024-03-21

申请号：US18241283

申请日：2023-09-01

Applicant: LG DISPLAY CO., LTD.

Inventor： Dohyung LEE ,  JuHeyuck BAECK ,  Jiyong NOH ,  HongRak CHOI ,  ChanYong JEONG

IPC: H10K59/121 ,  H10K59/126 ,  H10K71/00

CPC classification number: H10K59/1213 ,  H10K59/1216 ,  H10K59/126 ,  H10K71/861 ,  H10K2102/351

Abstract: A display panel and a display device both include a first active layer disposed on a substrate and including a channel area, a first area positioned on a first side of the channel area, and a second area positioned on a second side of the channel area, a first conductor on the first area, a second conductor on the second area, and a first auxiliary electrode on the first conductor, wherein an area where the first auxiliary electrode is disposed includes a repair area, thereby facilitating to repair a subpixel while mitigating or minimizing instantaneous ghosting on panel.