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    THIN-FILM TRANSISTOR ARRAY SUBSTRATE AND ELECTRONIC DEVICE INCLUDING THE SAME
    2.
    发明申请
    THIN-FILM TRANSISTOR ARRAY SUBSTRATE AND ELECTRONIC DEVICE INCLUDING THE SAME 审中-公开

    公开(公告)号：US20200184903A1

    公开(公告)日：2020-06-11

    申请号：US16694674

    申请日：2019-11-25

    Applicant: LG DISPLAY CO., LTD.

    Inventor： InTak CHO ,  PilSang YUN ,  Jeyong JEON ,  Jiyong NOH ,  SeHee PARK

    IPC: G09G3/3291 ,  H01L27/32 ,  G09G3/3266

    Abstract: An electronic device can include: a panel; a driver circuit configured to drive the panel; and first and second transistors disposed in the panel, the first and second transistors including: a first electrode of the first transistor, the first electrode being disposed on a substrate; a first insulating film disposed on the substrate, overlapping an edge of the first electrode and having an open area for receiving portions of the second transistor; a second electrode of the first transistor, the second electrode being disposed on the first insulating film and overlapping with a portion of the first electrode; third and fourth electrodes of the second transistor, the third electrode and the fourth electrode being disposed on a same layer as the second electrode and spaced apart from the second electrode, the open area of the first insulating film being disposed between the third electrode and the fourth electrode; a first active layer of the first transistor, the first active layer being disposed on the first electrode, the first insulating film and the second electrode; and a second active layer of the second transistor, the second active layer being disposed on the third and fourth electrodes and across the open area of the first insulating film.

    THIN-FILM TRANSISTOR AND DISPLAY DEVICE INCLUDING THE SAME
    3.
    发明公开
    THIN-FILM TRANSISTOR AND DISPLAY DEVICE INCLUDING THE SAME 审中-公开

    公开(公告)号：US20240282863A1

    公开(公告)日：2024-08-22

    申请号：US18634854

    申请日：2024-04-12

    Applicant: LG Display Co., Ltd.

    Inventor： SeHee PARK ,  JungSeok SEO ,  PilSang YUN ,  Jeyong JEON ,  Jaeyoon PARK ,  ChanYong JEONG

    IPC: H01L29/786 ,  H01L29/24 ,  H01L29/49 ,  H01L29/66

    CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66742

    Abstract: A thin-film transistor includes: a base substrate; a semiconductor layer on the base substrate, the semiconductor layer including a first oxide semiconductor layer and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer; a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer; a gate insulating layer between the semiconductor layer and the gate electrode; and a first mixture area between the first oxide semiconductor layer and the second oxide semiconductor layer. The second oxide semiconductor layer includes gallium (Ga) of 40 atom % or more in comparison with a total metallic element with respect to a number of atoms. The first mixture area, the first oxide semiconductor layer, and the second oxide semiconductor layer are formed by metal-organic chemical vapor deposition (MOCVD).

    PANEL, ELECTRONIC DEVICE AND TRANSISTOR
    5.
    发明申请
    PANEL, ELECTRONIC DEVICE AND TRANSISTOR 有权

    公开(公告)号：US20220173130A1

    公开(公告)日：2022-06-02

    申请号：US17671452

    申请日：2022-02-14

    Applicant: LG Display Co. Ltd.

    Inventor： Kwanghwan JI ,  HongRak CHOI ,  Jeyong JEON ,  Jaeyoon PARK

    IPC: H01L27/12 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L49/02 ,  H01L29/786

    Abstract: A panel comprises a substrate; a transistor disposed on the substrate and including: a source electrode, a drain electrode, a gate electrode, a gate insulation layer, an active layer, an auxiliary source electrode configured to electrically connect one end of the active layer to the source electrode, and an auxiliary drain electrode configured to electrically connect an other end of the active layer to the drain electrode; and a capacitor disposed on the substrate and including a first plate and a second plate. The first plate of the capacitor is made of a same material as the auxiliary source electrode and the auxiliary drain electrode.

    THIN-FILM TRANSISTOR, DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME
    7.
    发明申请
    THIN-FILM TRANSISTOR, DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20210384357A1

    公开(公告)日：2021-12-09

    申请号：US17406994

    申请日：2021-08-19

    Applicant: LG Display Co., Ltd.

    Inventor： SeHee PARK ,  JungSeok SEO ,  PilSang YUN ,  Jeyong JEON ,  Jaeyoon PARK ,  ChanYong JEONG

    IPC: H01L29/786 ,  H01L29/66 ,  H01L29/49 ,  H01L29/24

    Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.

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