公开(公告)号：US20230178686A1

公开(公告)日：2023-06-08

申请号：US17925152

申请日：2020-05-14

Applicant: LG ELECTRONICS INC.

Inventor： Hwanjoon CHOI ,  Byungjoon RHEE ,  Kyuhyun BANG ,  Kyoungtae WI

IPC: H01L33/22 ,  H01L33/38 ,  H01L33/00

CPC classification number: H01L33/22 ,  H01L33/0008 ,  H01L33/38 ,  H01L27/15

Abstract: Discussed is a semiconductor light emitting device that can include a light emitting structure comprising a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer, a first pad electrode electrically connected to the first conductivity type semiconductor layer, a second pad electrode electrically connected to the second conductivity type semiconductor layer, a first pattern structure disposed on the first pad electrode, and a second pattern structure disposed on the second pad electrode, wherein the first pattern structure comprises a first metal pattern structure disposed on the first pad electrode, a first adhesive material disposed on the first metal pattern structure, and a first conductive particle disposed in the first metal pattern structure.