EMITTER OXIDATION UNIFORMITY WITHIN A WAFER
    11.
    发明申请

    公开(公告)号:US20200076166A1

    公开(公告)日:2020-03-05

    申请号:US16244842

    申请日:2019-01-10

    Abstract: A wafer may comprise a substrate layer and a plurality of vertical cavity surface emitting lasers (VCSELs) formed on or within the substrate layer. A respective trench-to-trench distance associated with the plurality of VCSELs may vary across the wafer based on a predicted variation of an oxidation rate of an oxidation layer across the wafer.

    IMPEDANCE COMPENSATION ALONG A CHANNEL OF EMITTERS

    公开(公告)号:US20190199063A1

    公开(公告)日:2019-06-27

    申请号:US16217790

    申请日:2018-12-12

    CPC classification number: H01S5/18305 H01S5/18311 H01S5/18344 H01S5/18369

    Abstract: An emitter array may comprise a plurality of emitters and a metallization layer to electrically connect the plurality of emitters. The metallization layer may have a first end and a second end. The plurality of emitters may include a first emitter and a second emitter. The first emitter may be located closer to the first end than the second emitter. The first emitter and the second emitter have differently sized structures to compensate for a first impedance of the metallization layer between the first end and the first emitter and a second impedance between the first end and the second emitter.

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