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公开(公告)号：US20240364080A1
公开(公告)日：2024-10-31
申请号：US18140028
申请日：2023-04-27
IPC分类号： H01S5/183
CPC分类号： H01S5/18311 , H01S5/18375
摘要： Some embodiments of the present invention are directed to a multi-layer oxide aperture for a VCSEL. The oxide aperture may include multiple layers having different aluminum fractions that may reduce a spectral width of the VCSEL while maintaining longitudinal confinement. The oxide aperture may be formed from a mirror layer of the VCSEL proximate an active region. The mirror layer may include first epitaxial layers closest to the active region having a first aluminum fraction selected to longitudinally confine the optical field of the VCSEL. The mirror layer may include second epitaxial layers that have a second aluminum fraction low enough to prevent substantial oxidation of the second epitaxial layers. Additionally, the mirror layer may include third epitaxial layers that have a third aluminum fraction greater than the first and second aluminum fractions. The third epitaxial layers may be oxidized to form the oxide aperture.
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公开(公告)号：US20240356308A1
公开(公告)日：2024-10-24
申请号：US18631172
申请日：2024-04-10
发明人： TATSURO UCHIDA , TAKAKO SUGA , TAKESHI UCHIDA
CPC分类号： H01S5/423 , H01S5/042 , H01S5/18347 , H01S5/18311
摘要： A light emitting apparatus comprises a first light emitting unit and a second light emitting unit; and a first drive wiring configured to drive the first light emitting unit and a second drive wiring configured to drive the second light emitting unit. A plurality of light emitting elements having mesa structure is arranged in the first light emitting unit and the second light emitting unit. The first drive wiring is in electrical contact with an upper surface of the mesa structure in the first light emitting unit. The first drive wiring extends above the upper surface of the mesa structure in the second light emitting unit. The upper surface of the mesa structure in the second light emitting unit and the first drive wiring are electrically insulated by an insulating film.
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3.发明公开公开(公告)号：US20240348014A1
公开(公告)日：2024-10-17
申请号：US18336546
申请日：2023-06-16
发明人： Chien-Yao LU , Albert YUEN , Shibajyoti GHOSH DASTIDER , Yeyu ZHU
CPC分类号： H01S5/18311 , H01S5/042 , H01S5/18322 , H01S5/18347
摘要： A vertical-cavity surface-emitting laser (VCSEL) device includes a first distributed Bragg reflector (DBR) minor; a second DBR minor arranged on the first DBR mirror; an active layer arranged between the first DBR mirror and the second DBR mirror; and an oxidation layer arranged between the active layer and the second DBR mirror. The oxidation layer comprises an oxide aperture formed through the oxidation layer. A plurality of segmented oxidation trenches are arranged around an area in which the oxide aperture is formed and extend into the stacked structure to expose the oxidation layer for oxidation that forms the oxide aperture. A plurality of plating islands are spatially separated from each other. Each plating island vertically extends into a respective segmented oxidation trench of the plurality of segmented oxidation trenches and seals the respective segmented oxidation trench in order to prevent further oxidation of the oxidation layer.
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公开(公告)号：US20240348013A1
公开(公告)日：2024-10-17
申请号：US18294915
申请日：2022-02-18
发明人： Hideki WATANABE
CPC分类号： H01S5/18311 , H01S5/18369 , H01S5/3009
摘要： Provided is a surface emitting laser element capable of suppressing an increase in driving voltage for switching a surface emitting laser regardless of the size of a light emitting region.
The present technology provides a surface emitting laser element including: a first structure including a first multilayer film reflector; a second structure including a second multilayer film reflector; and a resonator disposed between the first and second structures, in which the resonator includes an active layer in which at least a light emitting region is disposed between the first and second multilayer film reflectors, and the second structure is provided with a field effect transistor that controls injection of a current into the light emitting region. According to the surface emitting laser element according to the present technology, it is possible to provide the surface emitting laser element capable of suppressing an increase in voltage driving voltage for switching the surface emitting laser regardless of the size of the light emitting region.-
公开(公告)号：US12100935B2
公开(公告)日：2024-09-24
申请号：US17170834
申请日：2021-02-08
发明人： Gunter Larisch , Sicong Tian , Dieter Bimberg
CPC分类号： H01S5/18327 , H01L33/005 , H01S5/18311 , H01S5/18313 , H01S5/1833 , H01S5/18333 , H01S5/18341 , H01S5/18347 , H01S5/423 , H01S5/04256 , H01S5/04257
摘要： A method of fabricating at least one radiation emitter including fabricating a layer stack that includes a first reflector, an active region, an oxidizable layer, and a second reflector; and locally removing the layer stack, and thereby forming at least one mesa. The mesa includes the first reflector, the active region, the oxidizable layer and the second reflector. Before or after locally removing the layer stack and forming the mesa the following steps are carried out: vertically etching at least three blind holes inside the layer stack, wherein the blind holes vertically extend to and expose the oxidizable layer; and oxidizing the oxidizable layer via the sidewalls of the blind holes in lateral direction. An oxidation front radially moves outwards from each hole. The etching is terminated before the entire oxidizable layer is oxidized, thereby forming at least one unoxidized aperture that is limited by at least three oxidation fronts.
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公开(公告)号：US12057677B2
公开(公告)日：2024-08-06
申请号：US17138907
申请日：2020-12-31
发明人： Daisuke Iguchi
IPC分类号： H01S5/042 , G06V20/64 , G06V40/16 , H01L31/12 , H01S5/02345 , H01S5/024 , H01S5/183 , H01S5/343 , H01S5/42
CPC分类号： H01S5/0428 , G06V20/64 , G06V40/166 , H01L31/12 , H01S5/02345 , H01S5/02469 , H01S5/18311 , H01S5/18361 , H01S5/34313 , H01S5/423
摘要： A light-emitting device includes an insulating base member having thermal conductivity of 10 W/m·K or more; a light-emitting element provided on a front surface side of the base member; a first rear surface wire that is provided on a rear surface side of the base member and is connected to one of a cathode electrode and an anode electrode of the light-emitting element; a second rear surface wire that is provided on the rear surface side of the base member and is connected to the other one of the cathode electrode and the anode electrode; and a reference potential wire that is provided on the rear surface side of the base member and is connected to an external reference potential.
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公开(公告)号：US20240235160A9
公开(公告)日：2024-07-11
申请号：US18211710
申请日：2023-06-20
发明人： Yuri Berk , Vladimir lakovlev , Tamir Sharkaz , Elad Mentovich
CPC分类号： H01S5/18347 , H01S5/18311 , H01S5/18377 , H01S5/2275 , H01S5/3095 , H01S5/3401 , H01S5/423
摘要： A vertical-cavity surface-emitting laser (VCSEL) is provided that includes a mesa structure disposed on a substrate. The mesa structure defines an emission axis of the VCSEL. The mesa structure includes a first reflector, a second reflector, and a cascaded active region structure disposed between the first reflector and the second reflector. The cascaded active region structure includes a plurality of cascaded active region layers disposed along the emission axis, where each of the cascade active region layers includes an active region having multi-quantum well and/or dots layers (MQLs), a tunnel junction aligned with the emission axis, and an oxide confinement layer. The oxide confinement layer is disposed between the tunnel junction and MQLs, and has an electrical current aperture defined therein. The mesa structure defines an optical window through which the VCSEL is configured to emit light.
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公开(公告)号：US20240222938A1
公开(公告)日：2024-07-04
申请号：US18289168
申请日：2022-05-04
IPC分类号： H01S5/183
CPC分类号： H01S5/18386 , H01S5/18311 , H01S5/18347 , H01S5/18377
摘要： The manufacture of surface emitting lasers that include an optical metastructure are described. For example, in accordance with some implementations, a method includes providing a sequence of semiconductor layers and processing the sequence of semiconductor layers to form an upper reflector disposed over an active layer, the active layer being disposed over a lower reflector, and the lower reflector layer being disposed over a substrate. The semiconductor layers in which the upper reflector is formed include one or more outer semiconductor layers, and the method includes forming a metastructure in the one or more outer semiconductor layers.
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9.发明公开公开(公告)号：US20240162684A1
公开(公告)日：2024-05-16
申请号：US18068248
申请日：2022-12-19
发明人： Matthew Glenn PETERS , Jun YANG , Guowei ZHAO
CPC分类号： H01S5/18311 , H01S5/3095
摘要： In some implementations, an optical emitter includes a set of light emitting junctions; and a set of tunnel junctions separating the set of light emitting junctions, wherein a first light emitting junction, of the set of light emitting junctions, is associated with a peak gain at a first wavelength, and wherein a second light emitting junction, of the set of light emitting junctions, is associated with a peak gain at a second wavelength that is different from the first wavelength.
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公开(公告)号：US20240055832A1
公开(公告)日：2024-02-15
申请号：US17766315
申请日：2020-02-24
发明人： Dongseok Kang , Yongxiang He , SIVA KUMAR LANKA , Yang Wang
CPC分类号： H01S5/18311 , H01S5/423 , H01S5/18361 , H01S5/04256 , H01S5/34
摘要： A VCSEL array comprises a plurality of non-isolated VCSEL emitters. Each non-isolated VCSEL emitter comprises a first reflector region, a current confining oxide layer, an oxide aperture, an active region, and a second reflector region. The current confining oxide layer and oxide aperture are made by oxidizing a relatively high Al-content layer via separate oxidation holes. The separate oxidation holes surround the oxide aperture. The first reflector regions of the plurality of non-isolated VCSEL structures are connected such that they are not isolated from each other completely by any isolation structure, and the second reflector regions of the plurality of non-isolated VCSEL structures are connected such that they are not isolated from each other completely by any isolation structure.
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