公开(公告)号：US20150171072A1

公开(公告)日：2015-06-18

申请号：US14630733

申请日：2015-02-25

Applicant: MediaTek Inc.

Inventor： Zheng ZENG ,  Ching-Chung KO ,  Bo-Shih HUANG

IPC: H01L27/02 ,  H01L29/47 ,  H01L29/872

CPC classification number: H01L29/0619 ,  H01L27/0255 ,  H01L29/0649 ,  H01L29/402 ,  H01L29/47 ,  H01L29/78 ,  H01L29/872

Abstract: The invention provides an electrostatic discharge (ESD) protection device. The ESD protection device includes a semiconductor substrate having an active region, a first well region having a first conductive type formed in the active region, a first doped region having the first conductive type formed in the first well region, a first metal contact disposed on the first doped region, and a second metal contact disposed on the active region, connecting to the first well region, wherein no doped region is formed between the second metal contact and the first well region.

Abstract translation: 本发明提供一种静电放电（ESD）保护装置。 ESD保护器件包括具有有源区的半导体衬底，在有源区中形成的具有第一导电类型的第一阱区，形成在第一阱区中的第一导电类型的第一掺杂区，设置在第一阱区上的第一金属触点 所述第一掺杂区域和设置在所述有源区上的第二金属触点连接到所述第一阱区域，其中在所述第二金属触点和所述第一阱区域之间没有形成掺杂区域。