摘要:
A set of ring oscillators is formed within a predetermined distance of each other. Each ring oscillator includes a number of coupled stages. The stages for a first given ring oscillator include an inverter having one or more first MOS devices having a first gate length. The stages for a second given ring oscillator include one or more second MOS devices having a second designed gate length. The stages for a third given ring oscillator comprise one or more third MOS devices having a third designed gate length. The second and third designed gate lengths are different and one of the second and third designed gate lengths is approximately equal to the first designed gate length. Performance is measured by using one of more of the given ring oscillators. The set of ring oscillators is used to determine one or more additional characteristics of MOS devices in the ring oscillators.
摘要:
A method of characterizing a circuit comprises the steps of measuring a first delay associated with the circuit when the circuit is substantially unloaded; measuring a second delay associated with the circuit when the circuit is loaded by a predetermined impedance; determining a difference between the second delay and the first delay, the delay difference corresponding to a switching impedance associated with the circuit; and determining a characterization parameter of the circuit, the characterization parameter being a function of at least the switching impedance associated with the circuit. The methodologies of the present invention are directed primarily to individually evaluating pullup and pulldown delays with substantial precision (e.g., sub-picosecond) for a representative set of circuits in the presence of an arbitrary switching history.
摘要:
A test system for determining leakage of an integrated circuit (IC) under test includes a test circuit formed on a same chip as the IC, the test circuit further having pulse generator configured to generate a high-speed input signal to the IC at a plurality of selectively programmable duty cycles and frequencies, the IC powered from a first power source independent from a second power source that powers the pulse generator; and a current measuring device configured to measure leakage current through the IC in a quiescent state, and current through the IC in an active switching state, responsive to the high-speed input signal at a plurality of the programmable duty cycles and frequencies, and wherein the test circuit utilizes only external low-speed input and output signals with respect to the chip.
摘要:
A test system for determining leakage of an integrated circuit (IC) under test includes a test circuit formed on a same chip as the IC, the test circuit further having pulse generator configured to generate a high-speed input signal to the IC at a plurality of selectively programmable duty cycles and frequencies, the IC powered from a first power source independent from a second power source that powers the pulse generator; and a current measuring device configured to measure leakage current through the IC in a quiescent state, and current through the IC in an active switching state, responsive to the high-speed input signal at a plurality of the programmable duty cycles and frequencies, and wherein the test circuit utilizes only external low-speed input and output signals with respect to the chip.
摘要:
A test structure for an integrated circuit device includes one or more experiments selectively configured to receive one or more high-speed input signals as inputs thereto and to output at least one high-speed output signal therefrom, the one or more experiments each comprising two or more logic gates configured to determine differential delay characteristics of individual circuit devices, at a precision level on the order of picoseconds to less than 1 picosecond; and wherein the one or more sets of experiments are disposed, and are fully testable, at a first level of metal wiring (M1) in the integrated circuit device.
摘要:
Techniques for inline measurement of a switching history time constant in an integrated circuit device are provided. A series of pulses is launched into a first stage of a delay chain comprising a plurality of delay stages connected in series and having a length greater than a decay length of at least an initial one of the series of pulses, such that the at least initial one of the series of pulses does not appear at a second stage of the delay chain. An amount of time between the launching of the initial one of the series of pulses and the appearance of at least one of the series of pulses at the second stage of the delay chain is determined. The switching history time constant is calculated as a function of a number of stages traversed by the at least one pulse, the determined amount of time, and the decay length of the at least initial one of the series of pulses based at least in part on a switching history of the integrated circuit device.
摘要:
A method of measuring variability of integrated circuit components is provided. A specified parameter of at least one first array configuration comprising a plurality of the integrated circuit components without specified internal connections between the integrated circuit components is measured. The specified parameter of at least one second array configuration comprising a plurality of the integrated circuit components nominally identical to those of the first array configuration with specified internal connections between the integrated circuit components is also measured. A variation coefficient is determined for the integrated circuit components based on the measured specified parameter of the at least one first array configuration and the at least one second array configuration.
摘要:
An integrated circuit device having at least one fuse capable of being blown in order to provide measurements of fuse current-voltage characteristics is provided. The integrated circuit device also provides at least one pulse generation circuit associated with the fuse and capable of generating a pulse to blow the fuse through one or more DC input signals.
摘要:
A test structure for an integrated circuit device includes one or more experiments selectively configured to receive one or more high-speed input signals as inputs thereto and to output at least one high-speed output signal therefrom, the one or more experiments each including two or more logic gates configured to determine differential delay characteristics of individual circuit devices, at a precision level on the order of picoseconds to less than 1 picosecond; and wherein the one or more sets of experiments are disposed, and are fully testable, at a first level of metal wiring (M1) in the integrated circuit device.
摘要:
A structure and method is provided for testing a 2-dimensional array of electrical devices, such as a 2-dimensional array in the first metal level (M1) of an electronic structure. The method for testing the 2-dimensional array provides a parallel test approach. The test structure provides a plurality of test pad structures to implement the parallel test approach. The test pad structures may include field effect transistors.