公开(公告)号：US20050139231A1

公开(公告)日：2005-06-30

申请号：US11026186

申请日：2004-12-29

Applicant: Alexandra Abadie ,  Pascal Besson ,  Marie-Noelle Semeria

Inventor： Alexandra Abadie ,  Pascal Besson ,  Marie-Noelle Semeria

IPC: H01L21/304 ,  B08B3/08 ,  C11D7/08 ,  C11D11/00 ,  H01L21/306 ,  B08B3/00

CPC classification number: B08B3/08 ,  C11D7/08 ,  C11D11/0047 ,  H01L21/02052 ,  Y10S134/902

Abstract: Method of wet cleaning a surface of at least one material chosen from silicon, silicon-germanium alloys, A(III)/B(V)-type semiconductors and epitaxially grown crystalline materials, such as germanium, in which method the following successive steps are carried out: a) the surface is brought into contact with an HF solution; b) the surface is rinsed with acidified, deionized water, then a powerful oxidizing agent is added to the deionized water and the rinsing is continued; c) optionally, step a) is repeated, once or twice, while optionally reducing the contacting time; d) step b) is optionally repeated, once or twice; and e) the surface is dried. Process for fabricating an electronic, optical or optoelectronic device, such as a CMOS or MOSFET device, comprising at least one wet cleaning step using the said cleaning method.

Abstract translation: 湿法清洗选自硅，硅 - 锗合金，A（III）/ B（V）型半导体和外延生长的晶体材料如锗的至少一种材料的表面的方法，其中以下连续步骤是 进行：a）使表面与HF溶液接触; b）用酸化的去离子水冲洗表面，然后将强力的氧化剂加入到去离子水中，继续冲洗; c）任选地，重复步骤a）一次或两次，同时可选地减少接触时间; d）步骤b）任选重复一次或两次; 和e）表面被干燥。 用于制造诸如CMOS或MOSFET器件的电子，光学或光电子器件的工艺，其包括使用所述清洁方法的至少一个湿式清洁步骤。