公开(公告)号：US08080933B2

公开(公告)日：2011-12-20

申请号：US12429332

申请日：2009-04-24

申请人： Toshihiko Takeda ,  Takeo Tsukamoto ,  Koki Nukanobu ,  Takuto Moriguchi

发明人： Toshihiko Takeda ,  Takeo Tsukamoto ,  Koki Nukanobu ,  Takuto Moriguchi

IPC分类号： H01J1/62

CPC分类号： H01J1/316 ,  H01J29/04 ,  H01J31/127 ,  H01J2329/0486

摘要： The present invention provides an electron-emitting device which does not need a fresh electrode to be added thereto, has excellent convergence and shows little change of a discharged electric current for short and long periods of time, and an image display apparatus using the device. The electron-emitting device includes at least a pair of device electrodes formed on an insulating substrate, and a plurality of electroconductive films which are formed so as to connect the device electrodes to each other and have gaps therein, wherein the surface of a region which is at least adjacent to the gap between the electroconductive films and is not covered with the electroconductive film is higher than the surface of the electroconductive film.

摘要翻译： 本发明提供一种不需要添加新鲜电极的电子发射器件，具有良好的会聚性，并且短时间和长时间内放电电流几乎没有变化，以及使用该器件的图像显示装置。 电子发射器件至少包括一对形成在绝缘衬底上的器件电极，以及多个导电膜，其形成为将器件电极彼此连接并且在其中具有间隙，其中， 至少与导电膜之间的间隙相邻并且不被导电膜覆盖的高于导电膜的表面。

公开(公告)号：US07988513B2

公开(公告)日：2011-08-02

申请号：US12693057

申请日：2010-01-25

申请人： Koki Nukanobu ,  Takahiro Sato

发明人： Koki Nukanobu ,  Takahiro Sato

IPC分类号： H01J9/00

CPC分类号： H01J9/027 ,  H01J1/316

摘要： An electron-emitting device having little dispersion of its electron emission characteristic and a suppressed “fluctuation” of its electron emission quantity is provided. The electron-emitting device includes a substrate equipped with a first portion containing silicon oxide and a second portion arranged abreast of the first portion and having a higher heat conductance, and an electroconductive film including a gap therein, the electroconductive film arranged on the substrate, wherein the first and the second portions having a resistance higher than that of the electroconductive film, and the gap is arranged on the first portion.

摘要翻译： 提供了电子发射特性小的电子发射器件和其电子发射量的抑制“波动”的电子发射器件。 电子发射器件包括：衬底，其配备有包含氧化硅的第一部分和与第一部分并排布置并具有更高导热性的第二部分;以及导电膜，其中包括间隙，导电膜布置在衬底上， 其中所述第一部分和所述第二部分的电阻高于所述导电膜的电阻，并且所述间隙设置在所述第一部分上。

公开(公告)号：US08022608B2

公开(公告)日：2011-09-20

申请号：US12481851

申请日：2009-06-10

申请人： Koki Nukanobu ,  Keisuke Yamamoto ,  Tamaki Kobayashi ,  Takuto Moriguchi

发明人： Koki Nukanobu ,  Keisuke Yamamoto ,  Tamaki Kobayashi ,  Takuto Moriguchi

IPC分类号： H01J1/88 ,  H01J1/30

CPC分类号： H01J1/316

摘要： By applying a drive voltage Vf [V] between first and second conductive films, when electrons are emitted by the first conductive film, an equipotential line of 0.5 Vf [V] is inclined toward the first conductive film, rather than toward the second conductive film, in the vicinity of the electron emitting portion of the first conductive film, in a cross section extending across the electron emitting portion and the portion of the second conductive film located nearest the electron emitting portion. The present invention improves electron emission efficiency.

摘要翻译： 通过在第一导电膜和第二导电膜之间施加驱动电压Vf [V]，当电子被第一导电膜发射时，0.5Vf [V]的等电位线朝向第一导电膜倾斜，而不是朝向第二导电膜 在第一导电膜的电子发射部分附近，横跨电子发射部分的横截面和位于最靠近电子发射部分的第二导电膜的部分。 本发明提高电子发射效率。

公开(公告)号：US07679278B2

公开(公告)日：2010-03-16

申请号：US11478576

申请日：2006-07-03

申请人： Koki Nukanobu ,  Takahiro Sato

发明人： Koki Nukanobu ,  Takahiro Sato

IPC分类号： H01J1/62 ,  H01J63/04

CPC分类号： H01J9/027 ,  H01J1/316

摘要： An electron-emitting device having little dispersion of its electron emission characteristic and a suppressed “fluctuation” of its electron emission quantity is provided. The electron-emitting device includes a substrate equipped with a first portion containing silicon oxide and a second portion arranged abreast of the first portion and having a higher heat conductance, and an electroconductive film including a gap therein, the electroconductive film arranged on the substrate, wherein the first and the second portions having a resistance higher than that of the electroconductive film, and the gap is arranged on the first portion.

摘要翻译： 提供了电子发射特性小的电子发射器件和其电子发射量的抑制“波动”的电子发射器件。 电子发射器件包括：衬底，其配备有包含氧化硅的第一部分和与第一部分并排布置并具有更高导热性的第二部分;以及导电膜，其中包括间隙，导电膜布置在衬底上， 其中所述第一部分和所述第二部分的电阻高于所述导电膜的电阻，并且所述间隙布置在所述第一部分上。

公开(公告)号：US08129096B2

公开(公告)日：2012-03-06

申请号：US12427946

申请日：2009-04-22

申请人： Koki Nukanobu ,  Naofumi Aoki

发明人： Koki Nukanobu ,  Naofumi Aoki

IPC分类号： G03F7/26

CPC分类号： H05K3/387 ,  H05K3/182 ,  H05K3/185 ,  H05K2203/0113 ,  H05K2203/121

摘要： A method capable of easily and simply manufacturing a conductive member pattern such as a nano-size fine wiring or electrode is disclosed. Specifically, the disclosed method for manufacturing a conductive member pattern includes the steps of: forming an ion-exchangeable resin pattern on a substrate by using a photosensitive resin; making the resin pattern absorb a metal component-containing solution; and baking the resin pattern having absorbed the metal component-containing solution, wherein the width and the ratio “width/height” of the resin pattern before baking are 1 μm or less and 5 or less, respectively.

摘要翻译： 公开了一种能容易且简单地制造诸如纳米尺寸精细布线或电极的导电构件图案的方法。 具体地，所公开的导电构件图案的制造方法包括以下步骤：通过使用感光树脂在基板上形成可离子交换的树脂图案; 使树脂图案吸收含金属成分的溶液; 并烘烤吸收了含有金属成分的溶液的树脂图案，其中宽度和烘烤前树脂图案的宽度和宽度/高度分别为1μm以下且5以下。

公开(公告)号：US20090286184A1

公开(公告)日：2009-11-19

申请号：US12427946

申请日：2009-04-22

申请人： Koki Nukanobu ,  Naofumi Aoki

发明人： Koki Nukanobu ,  Naofumi Aoki

IPC分类号： G03F7/20 ,  B28B11/00

CPC分类号： H05K3/387 ,  H05K3/182 ,  H05K3/185 ,  H05K2203/0113 ,  H05K2203/121

摘要： A method capable of easily and simply manufacturing a conductive member pattern such as a nano-size fine wiring or electrode is disclosed. Specifically, the disclosed method for manufacturing a conductive member pattern includes the steps of: forming an ion-exchangeable resin pattern on a substrate by using a photosensitive resin; making the resin pattern absorb a metal component-containing solution; and baking the resin pattern having absorbed the metal component-containing solution, wherein the width and the ratio “width/height” of the resin pattern before baking are 1 μm or less and 5 or less, respectively.

摘要翻译： 公开了一种能容易且简单地制造诸如纳米尺寸精细布线或电极的导电构件图案的方法。 具体地，所公开的导电构件图案的制造方法包括以下步骤：通过使用感光树脂在基板上形成可离子交换的树脂图案; 使树脂图案吸收含金属成分的溶液; 并烘烤吸收了含有金属成分的溶液的树脂图案，其中，烘烤前的树脂图案的宽度和宽度“宽/高”分别为1μm以下且5以下。

公开(公告)号：US20090284120A1

公开(公告)日：2009-11-19

申请号：US12430580

申请日：2009-04-27

申请人： Koki Nukanobu ,  Takahiro Sato ,  Takuto Moriguchi ,  Eiji Takeuchi

发明人： Koki Nukanobu ,  Takahiro Sato ,  Takuto Moriguchi ,  Eiji Takeuchi

IPC分类号： H01J1/02

CPC分类号： H01J1/316 ,  H01J9/027 ,  H01J2201/3165 ,  H01J2329/0481 ,  H01J2329/0489

摘要： An electron emitter retaining a stable electron emission property with minimized fluctuation over a long period of time is provided. Also, a long-life image display apparatus that exhibits little fluctuation over a long period of time, by using electron emitters that retain a stable electron emission property with minimized fluctuation over long period of time is provided.

摘要翻译： 提供了保持稳定的电子发射特性的电子发射器，其长时间波动最小化。 另外，通过使用长时间保持稳定的电子发射特性和最小化的波动的电子发射体，提供长时间显示很小波动的长寿命图像显示装置。

公开(公告)号：US07583015B2

公开(公告)日：2009-09-01

申请号：US11131195

申请日：2005-05-18

申请人： Koki Nukanobu ,  Keisuke Yamamoto ,  Tamaki Kobayahsi ,  Takuto Moriguchi

发明人： Koki Nukanobu ,  Keisuke Yamamoto ,  Tamaki Kobayahsi ,  Takuto Moriguchi

IPC分类号： H01J1/88 ,  H01J1/30

CPC分类号： H01J1/316

摘要： By applying a drive voltage Vf [V] between first and second conductive films, when electrons are emitted by the first conductive film, an equipotential line of 0.5 Vf [V] is inclined toward the first conductive film, rather than toward the second conductive film, in the vicinity of the electron emitting portion of the first conductive film, in a cross section extending across the electron emitting portion and the portion of the second conductive film located nearest the electron emitting portion. The present invention improves electron emission efficiency.

摘要翻译： 通过在第一导电膜和第二导电膜之间施加驱动电压Vf [V]，当电子被第一导电膜发射时，0.5Vf [V]的等电位线朝向第一导电膜倾斜，而不是朝向第二导电膜 在第一导电膜的电子发射部分附近，横跨电子发射部分的横截面和位于最靠近电子发射部分的第二导电膜的部分。 本发明提高电子发射效率。

公开(公告)号：US07843118B2

公开(公告)日：2010-11-30

申请号：US11791785

申请日：2005-12-21

申请人： Koki Nukanobu ,  Takuto Moriguchi ,  Keisuke Yamamoto

发明人： Koki Nukanobu ,  Takuto Moriguchi ,  Keisuke Yamamoto

IPC分类号： H01J9/02 ,  H01J1/62

CPC分类号： H01J31/127 ,  H01J1/316 ,  H01J9/025 ,  H01J29/481

摘要： An electron-emitting device is provided with improved electron emitting efficiency. An electron-emitting device includes first and second electroconductive films disposed on a surface of a substrate in opposition to each other to form a gap between ends of the first and second electroconductive films. The end of the first electroconductive film includes a portion the minimum distance d1 from which to the second electroconductive film is 10 nm or less. Let d2 denote a minimum distance between the end of the first electroconductive film which is away from the portion the minimum distance d1 from which to the second electroconductive film is 10 nm or less by the minimum distance d1 and the end of the second electroconductive film. The relation of d2/d1≧1.2 is satisfied.

摘要翻译： 电子发射器件具有改进的电子发射效率。 电子发射器件包括彼此相对设置在衬底的表面上的第一和第二导电膜，以在第一和第二导电膜的端部之间形成间隙。 第一导电膜的端部包括与第二导电膜的最小距离d1为10nm以下的部分。 令d2表示第一导电膜的远离距离第二导电膜的最小距离d1为10nm或更小的部分的最小距离最小距离d1和第二导电膜的端部之间的最小距离。 满足d2 /d1≥1.2的关系。

公开(公告)号：US20090273274A1

公开(公告)日：2009-11-05

申请号：US12502451

申请日：2009-07-14

申请人： Toshihiko Takeda ,  Koki Nukanobu ,  Takuto Moriguchi

发明人： Toshihiko Takeda ,  Koki Nukanobu ,  Takuto Moriguchi

IPC分类号： H01J1/62

CPC分类号： H01J9/027

摘要： A method for manufacturing a precursor to an electron-emitting device includes the steps of preparing an electron-emitting member, and alternately exposing the electron-emitting member to an oxygen-containing gas and a metal-containing gas.

摘要翻译： 用于制造电子发射器件的前体的方法包括制备电子发射部件，并将电子发射部件交替暴露于含氧气体和含金属气体的步骤。