公开(公告)号：US08659065B2

公开(公告)日：2014-02-25

申请号：US13225648

申请日：2011-09-06

申请人： Masakiyo Sumitomo ,  Yasushi Higuchi ,  Shigemitsu Fukatsu

发明人： Masakiyo Sumitomo ,  Yasushi Higuchi ,  Shigemitsu Fukatsu

IPC分类号： H01L27/108

CPC分类号： H01L29/7397 ,  H01L29/0619 ,  H01L29/0834 ,  H01L29/0839 ,  H01L29/1095 ,  H01L29/4236 ,  H01L29/66348

摘要： A semiconductor device includes a drift layer, a base layer on the drift layer, and trench gate structures. Each trench gate structure includes a trench reaching the drift layer by penetrating the base layer, a gate insulation layer on a wall surface of the trench, and a gate electrode on the gate insulation layer. A bottom portion of the trench gate structure is located in the drift layer and expands in a predetermined direction so that a distance between the bottom portions of adjacent trench gate structures is less than a distance between opening portions of adjacent trench gate structures in the direction. A thickness of the gate insulation layer is greater in the bottom portion than in the opening portion.

摘要翻译： 半导体器件包括漂移层，漂移层上的基极层和沟槽栅极结构。 每个沟槽栅极结构包括通过穿透基底层到达漂移层的沟槽，在沟槽的壁表面上的栅极绝缘层和栅极绝缘层上的栅极电极。 沟槽栅极结构的底部位于漂移层中并沿预定方向膨胀，使得相邻沟槽栅极结构的底部之间的距离小于相邻沟槽栅极结构在该方向上的开口部分之间的距离。 栅极绝缘层的厚度在底部比在开口部分大。

公开(公告)号：US20140217464A1

公开(公告)日：2014-08-07

申请号：US14347077

申请日：2012-09-13

申请人： Yasushi Higuchi ,  Shigemitsu Fukatsu ,  Masakiyo Sumitomo

发明人： Yasushi Higuchi ,  Shigemitsu Fukatsu ,  Masakiyo Sumitomo

IPC分类号： H01L29/739 ,  H01L29/423

CPC分类号： H01L29/7397 ,  H01L29/0834 ,  H01L29/0843 ,  H01L29/1095 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/66348

摘要： In a semiconductor device, a trench gate has a bottom portion in a drift layer and a communication portion extending from a surface of a base layer to communicate with the bottom portion. A distance between adjacent bottom portions is smaller than a distance between adjacent communication portions in a x-direction. A region between adjacent trench gates is divided in a y-direction into an effective region as an electron injection source and an ineffective region which does not serve as the electron injection source. An interval L1 (>0) of the ineffective region in the y-direction, a length D1 of the communication portion in the z-direction, and a length D2 of the bottom portion in the z-direction satisfy L1≦2(D1+D2). The z-direction is orthogonal to a x-y plane defined by the x-direction and the y-direction which are orthogonal to each other.

摘要翻译： 在半导体器件中，沟槽栅极具有漂移层中的底部部分和从基底层的表面延伸以与底部部分连通的连通部分。 相邻底部之间的距离小于x方向上的相邻连通部之间的距离。 相邻沟槽栅极之间的区域在y方向上分成有效区域作为电子注入源和不用作电子注入源的无效区域。 y方向无效区域的间隔L1（> 0），z方向的连通部的长度D1和z方向的底部的长度D2满足L1＆nlE; 2（D1 + D2）。 z方向与由x方向和y方向相互正交的x-y平面正交。