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公开(公告)号:US20140043103A1
公开(公告)日:2014-02-13
申请号:US13570933
申请日:2012-08-09
IPC分类号: H03L7/07
CPC分类号: H03B19/14 , H03B2200/0074 , H03L7/183
摘要: Tunable injection locked (IL) dividers having enhanced locking range, good phase noise performance, and low power consumption are disclosed. In an exemplary design, an apparatus (e.g., a wireless device) includes an oscillator and at least one IL divider. The oscillator provides an oscillator signal at a first frequency. The at least one IL divider receives the oscillator signal and provides an output signal at a second frequency, which is related to the first frequency by an overall divider ratio for the IL divider(s). Each IL divider may be calibrated based on a target frequency of that IL divider. Each IL divider may be calibrated (e.g., by tuning at least one adjustable capacitor) to obtain an oscillation frequency within a predetermined tolerance of the target frequency of that IL divider. The oscillator may be calibrated based on a target oscillation frequency of the oscillator.
摘要翻译: 公开了具有增强的锁定范围,良好的相位噪声性能和低功耗的可调注入锁定(IL)分配器。 在示例性设计中,装置(例如,无线装置)包括振荡器和至少一个IL分配器。 振荡器以第一个频率提供振荡器信号。 至少一个IL分配器接收振荡器信号,并以第二频率提供输出信号,其与第一频率相关,用于IL分频器的总分频比。 每个IL分压器可以基于该IL分压器的目标频率进行校准。 每个IL分压器可以被校准(例如,通过调谐至少一个可调电容器)以获得在该IL分压器的目标频率的预定公差内的振荡频率。 振荡器可以基于振荡器的目标振荡频率进行校准。
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公开(公告)号:US08736392B2
公开(公告)日:2014-05-27
申请号:US12406525
申请日:2009-03-18
CPC分类号: H03L7/08 , H03B5/1212 , H03B5/1228 , H03B5/1256 , H03B5/1296 , H03L7/099
摘要: Techniques for providing transformer-based CMOS oscillators capable of operation with low voltage power supplies. In an exemplary embodiment, an LC tank is provided at the drains of a transistor pair, and the inductance of the LC tank is mutually magnetically coupled to an inductance between the gates of the transistor pair. A separate complementary transistor pair is also coupled to the LC tank. A further exemplary embodiment provides an LC tank at the gates of a transistor pair, as well as for three-way coupling amongst a tank inductance, an inductance between the gates of the transistor pair, and an inductance between the gates of a complementary transistor pair.
摘要翻译: 提供能够使用低压电源运行的基于变压器的CMOS振荡器的技术。 在示例性实施例中,在晶体管对的漏极处提供LC箱,并且LC箱的电感与晶体管对的栅极之间的电感相互磁耦合。 单独的互补晶体管对也耦合到LC箱。 另一示例性实施例在晶体管对的栅极处提供LC槽,以及用于三极管电感,晶体管对的栅极之间的电感和互补晶体管对的栅极之间的电感之间的三通耦合 。
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公开(公告)号:US20120242378A1
公开(公告)日:2012-09-27
申请号:US13070252
申请日:2011-03-23
IPC分类号: H03B19/14 , H01L27/088
CPC分类号: H03K3/356182 , H03B19/14 , H03K23/425
摘要: A frequency divider circuit is described. The frequency divider circuit includes a first cross-coupling. The first cross-coupling includes a first cross-coupled transistor with a first gate. The first gate is separately biased. The first cross-coupling also includes a second cross-coupled transistor with a second gate. The second gate is separately biased. The first gate is coupled to the second cross-coupled transistor and the second gate is coupled to the first cross-coupled transistor.
摘要翻译: 描述了分频器电路。 分频器电路包括第一交叉耦合。 第一交叉耦合包括具有第一栅极的第一交叉耦合晶体管。 第一个门是单独的偏见。 第一交叉耦合还包括具有第二栅极的第二交叉耦合晶体管。 第二个门是分开的偏见。 第一栅极耦合到第二交叉耦合晶体管,第二栅极耦合到第一交叉耦合晶体管。
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公开(公告)号:US20100238843A1
公开(公告)日:2010-09-23
申请号:US12406525
申请日:2009-03-18
CPC分类号: H03L7/08 , H03B5/1212 , H03B5/1228 , H03B5/1256 , H03B5/1296 , H03L7/099
摘要: Techniques for providing transformer-based CMOS oscillators capable of operation with low voltage power supplies. In an exemplary embodiment, an LC tank is provided at the drains of a transistor pair, and the inductance of the LC tank is mutually magnetically coupled to an inductance between the gates of the transistor pair. A separate complementary transistor pair is also coupled to the LC tank. A further exemplary embodiment provides an LC tank at the gates of a transistor pair, as well as for three-way coupling amongst a tank inductance, an inductance between the gates of the transistor pair, and an inductance between the gates of a complementary transistor pair.
摘要翻译: 提供能够使用低压电源运行的基于变压器的CMOS振荡器的技术。 在示例性实施例中,在晶体管对的漏极处提供LC箱,并且LC箱的电感与晶体管对的栅极之间的电感相互磁耦合。 单独的互补晶体管对也耦合到LC箱。 另一示例性实施例在晶体管对的栅极处提供LC槽,以及用于三极管电感,晶体管对的栅极之间的电感和互补晶体管对的栅极之间的电感之间的三通耦合 。
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