公开(公告)号：US20070049012A1

公开(公告)日：2007-03-01

申请号：US11162154

申请日：2005-08-31

Applicant: Jen-Ren Huang ,  Cheng-Ming Weng ,  Miao-Chun Lin

Inventor： Jen-Ren Huang ,  Cheng-Ming Weng ,  Miao-Chun Lin

IPC: H01L21/4763

CPC classification number: H01L21/76811 ,  H01L21/76813

Abstract: A dual damascene structure is described, including a substrate, a dielectric layer, a hard mask layer, a contact and a conductive line. The dielectric layer is located on the substrate, the hard mask layer is on the dielectric layer, the contact is located in the dielectric layer, and a horizontal cross-section of the contact has an asymmetrically rounded outline. The conductive line is in the hard mask layer and the dielectric layer, and is located on and electrically connected to the contact. The conductive line has a laterally swelling portion on an edge portion of the first contact, wherein the borders of the laterally swelling portion and the edge portion are contiguous.

Abstract translation: 描述了一种双镶嵌结构，包括基底，电介质层，硬掩模层，触点和导电线。 电介质层位于基板上，硬掩模层位于电介质层上，触点位于电介质层中，触头的水平横截面具有不对称的圆形轮廓。 导电线位于硬掩模层和介电层中，并且位于触点上并电连接。 导线在第一接触件的边缘部分上具有横向膨胀部分，其中横向膨胀部分和边缘部分的边界是连续的。

公开(公告)号：US07214612B2

公开(公告)日：2007-05-08

申请号：US11162154

申请日：2005-08-31

Applicant: Jen-Ren Huang ,  Cheng-Ming Weng ,  Miao-Chun Lin

Inventor： Jen-Ren Huang ,  Cheng-Ming Weng ,  Miao-Chun Lin

IPC: H01L21/4763

CPC classification number: H01L21/76811 ,  H01L21/76813

Abstract: A dual damascene structure is described, including a substrate, a dielectric layer, a hard mask layer, a contact and a conductive line. The dielectric layer is located on the substrate, the hard mask layer is on the dielectric layer, the contact is located in the dielectric layer, and a horizontal cross-section of the contact has an asymmetrically rounded outline. The conductive line is in the hard mask layer and the dielectric layer, and is located on and electrically connected to the contact. The conductive line has a laterally swelling portion on an edge portion of the first contact, wherein the borders of the laterally swelling portion and the edge portion are contiguous.

Abstract translation: 描述了一种双镶嵌结构，包括基底，电介质层，硬掩模层，触点和导电线。 电介质层位于基板上，硬掩模层位于电介质层上，触点位于电介质层中，触头的水平横截面具有不对称的圆形轮廓。 导电线位于硬掩模层和介电层中，并且位于触点上并电连接。 导线在第一接触件的边缘部分上具有横向膨胀部分，其中横向膨胀部分和边缘部分的边界是连续的。

公开(公告)号：US20070080386A1

公开(公告)日：2007-04-12

申请号：US11608252

申请日：2006-12-08

Applicant: Jen-Ren Huang ,  Cheng-Ming Weng ,  Miao-Chun Lin

Inventor： Jen-Ren Huang ,  Cheng-Ming Weng ,  Miao-Chun Lin

IPC: H01L29/94 ,  H01L27/108 ,  H01L29/76 ,  H01L31/119

CPC classification number: H01L21/76811 ,  H01L21/76813

Abstract: A dual damascene structure is described, including a substrate, a dielectric layer, a hard mask layer, a contact and a conductive line. The dielectric layer is located on the substrate, the hard mask layer is on the dielectric layer, the contact is located in the dielectric layer, and a horizontal cross-section of the contact has an asymmetrically rounded outline. The conductive line is in the hard mask layer and the dielectric layer, and is located on and electrically connected to the contact. The conductive line has a laterally swelling portion on an edge portion of the first contact, wherein the borders of the laterally swelling portion and the edge portion are contiguous.

Abstract translation: 描述了一种双镶嵌结构，包括基底，电介质层，硬掩模层，触点和导电线。 电介质层位于基板上，硬掩模层位于电介质层上，触点位于电介质层中，触头的水平横截面具有不对称的圆形轮廓。 导电线位于硬掩模层和电介质层中，并且位于触点上并电连接。 导线在第一接触件的边缘部分上具有横向膨胀部分，其中横向膨胀部分和边缘部分的边界是连续的。