公开(公告)号：US07700379B2

公开(公告)日：2010-04-20

申请号：US10486661

申请日：2002-08-12

申请人： Michael J. Haji-Sheikh ,  James R. Biard ,  Simon Rabinovich ,  James K. Guenter ,  Bobby M. Hawkins

发明人： Michael J. Haji-Sheikh ,  James R. Biard ,  Simon Rabinovich ,  James K. Guenter ,  Bobby M. Hawkins

IPC分类号： H01L21/66 ,  G01R31/26

CPC分类号： G01R31/2874 ,  H01S5/0021 ,  H01S5/02461 ,  H01S5/183

摘要： Methods of conducting wafer level burn-in (WLBI) of semiconductor devices are presented wherein systems are provided having at least two electrodes (210, 215). Electrical bias (920) and/or thermal power (925) is applied on each side of a wafer (100) having back and front electrical contacts for semiconductor devices borne by the wafer. A pliable conductive layer (910) is described for supplying pins on the device side of a wafer with electrical contact and/or also for providing protection to the wafer from mechanical pressure being applied to its surfaces. Use of a cooling system (950) is also described for enabling the application of a uniform temperature to a wafer undergoing burn-in. Wafer level burn-in is performed by applying electrical and physical contact (915) using an upper contact plate to individual contacts for the semiconductor devices; applying electrical and physical contact using a lower contact plate (910) to a substrate surface of said semiconductor wafer; providing electrical power (920) to said semiconductor devices through said upper and lower second contact plates from a power source coupled to said upper and lower contacts plates; monitoring and controlling electrical power (935) to said semiconductor devices for a period in accordance with a specified burn-in criteria; removing electrical power at completion of said period (955); and removing electrical and physical contact to said semiconductor wafer (965).

摘要翻译： 提供了进行半导体器件的晶片级老化（WLBI）的方法，其中提供具有至少两个电极（210,215）的系统。 电晶体（920）和/或热功率（925）施加在具有由晶片承载的半导体器件的背面和前部电触头的晶片（100）的每一侧上。 描述了一种柔性导电层（910），用于在具有电接触的晶片的器件侧上提供引脚和/或用于为施加到其表面的机械压力提供对晶片的保护。 还描述了使用冷却系统（950），以使得能够对经历老化的晶片施加均匀的温度。 通过使用上接触板向半导体器件的单个触点施加电和物理接触（915）来执行晶片级老化; 使用下接触板（910）将电和物理接触施加到所述半导体晶片的衬底表面; 通过所述上和下第二接触板从耦合到所述上和下接触板的电源向所述半导体器件提供电力（920）; 根据指定的老化标准对所述半导体器件监测和控制电力（935）一段时间; 在所述期间完成时移除电力（955）; 以及去除与所述半导体晶片（965）的电和物理接触。

公开(公告)号：US07190184B2

公开(公告)日：2007-03-13

申请号：US10486672

申请日：2002-08-12

申请人： Michael J. Haji-Sheikh ,  James R. Biard ,  Simon Rabinovich ,  James K. Guenter ,  Bobby M. Hawkins

发明人： Michael J. Haji-Sheikh ,  James R. Biard ,  Simon Rabinovich ,  James K. Guenter ,  Bobby M. Hawkins

IPC分类号： G01R31/02

CPC分类号： G01R31/275 ,  G01R31/2831 ,  G01R31/2863 ,  G01R31/2872 ,  G01R31/2874 ,  G01R31/2884 ,  H01S5/0021 ,  H01S5/005 ,  H01S5/423

摘要： In one example, a wafer level burn-in system includes a first electrode plate for providing electrical contact simultaneously to contacts of a group of semiconductor devices borne by a semiconductor wafer on a device surface of the semiconductor wafer. A second electrode plate is employed for providing electrical contact to a substrate surface of the semiconductor wafer. Finally, an electrical power generator is employed for providing electrical power to the group of semiconductor devices through the contacts and the substrate of the semiconductor wafer through the first and second electrode plates.

摘要翻译： 在一个示例中，晶片级老化系统包括第一电极板，用于同时向半导体晶片的器件表面上由半导体晶片承载的一组半导体器件的触点提供电接触。 使用第二电极板来提供与半导体晶片的衬底表面的电接触。 最后，采用电力发生器通过第一和第二电极板通过触点和半导体晶片的衬底向半导体器件组提供电力。

公开(公告)号：US06492697B1

公开(公告)日：2002-12-10

申请号：US09542213

申请日：2000-04-04

申请人： Mark R. Plagens ,  Michael J. Haji-Sheikh ,  Walter T. Matzen

发明人： Mark R. Plagens ,  Michael J. Haji-Sheikh ,  Walter T. Matzen

IPC分类号： H01L2982

CPC分类号： H01L43/065 ,  G01R33/07

摘要： A Hall-effect element includes an isolating layer and an active layer of a first electrical conductivity type disposed on the isolating layer, the active layer having a surface. A first set of contacts is disposed in contact with the surface along a first axis, and a second set of contacts is disposed in contact with the surface along a second axis transverse to the first axis. An insulating layer is disposed on the surface. A metal control field plate is disposed on the insulating layer and is coupleable to a voltage source to control the accumulation of charge carriers at the surface of the active layer to vary the resistance of the active layer. Also, a method is provided for reducing null offset in a Hall-effect element. The method includes the steps of providing an isolating layer, disposing an active layer of a first electrical conductivity type on the isolating layer, the active layer having a surface, disposing a first set of contacts on the surface along a first axis, disposing a second set of contacts on the surface along a second axis transverse to the first axis; and disposing an insulating layer on the surface. A voltage is applied across the insulating layer to control the accumulation of charge carriers at the surface to vary the resistance of the active layer.

摘要翻译： 霍尔效应元件包括隔离层和布置在隔离层上的第一导电类型的有源层，活性层具有表面。 第一组触点设置成沿着第一轴线与表面接触，并且第二组触点设置成沿着横向于第一轴线的第二轴线与表面接触。 绝缘层设置在表面上。 金属控制场板设置在绝缘层上并且可耦合到电压源以控制在有源层的表面上的载流子的累积以改变有源层的电阻。 此外，提供了一种用于减少霍尔效应元素中的零偏移的方法。 该方法包括以下步骤：提供隔离层，在隔离层上设置第一导电类型的有源层，有源层具有表面，沿着第一轴在表面上设置第一组触点， 沿着横向于第一轴线的第二轴线的表面上的一组触点; 并在表面上设置绝缘层。 在绝缘层上施加电压以控制表面处的电荷载流子的累积以改变有源层的电阻。