公开(公告)号：US11514994B1

公开(公告)日：2022-11-29

申请号：US17506735

申请日：2021-10-21

Applicant: Microchip Technology Inc.

Inventor： Lorenzo Zuolo ,  Rino Micheloni

IPC: G11C29/00 ,  G11C29/02 ,  G11C29/44 ,  G11C11/54 ,  G11C29/50 ,  G11C29/10

Abstract: A method for outlier management at a flash controller includes testing a flash memory device to identify one or more outlier blocks of the flash memory device. Hyperparameters for a DNN are loaded into a training circuit of the flash controller. Test reads of the one or more outlier blocks are performed and a number of errors in the test reads is identified. The DNN is trained using a mini-batch training process and using the identified number of errors in the test reads and is tested to determine whether the trained DNN meets a training error threshold. The performing, the identifying, the training and the testing are repeated until the trained DNN meets the training error threshold to identify parameters of an outlier-block DNN. A neural network operation is performed using the identified parameters to predict a set of TVSO values. A read is performed using the set of predicted TVSO values.

公开(公告)号：US11514992B2

公开(公告)日：2022-11-29

申请号：US17234993

申请日：2021-04-20

Applicant: Microchip Technology Inc.

Inventor： Lorenzo Zuolo ,  Rino Micheloni

IPC: G11C16/34 ,  G06N5/04 ,  G11C16/26 ,  G11C16/10 ,  G11C16/14 ,  G11C16/08 ,  G06N3/04 ,  G06N3/063

Abstract: A method for reading a flash memory device includes storing configuration files of reliability-state Classification Neural Network (CNN) models and Regression Neural Network (RNN) inference models, and storing reliability-state tags corresponding to reliability states. The current number of P/E cycles is identified and a reliability-state CNN model is selected corresponding to the current number of P/E cycles. A neural network operation of the selected reliability-state CNN model is performed to identify a predicted reliability state. Corresponding reliability-state tags are identified and a corresponding RNN inference model is selected. A neural network operation of the selected RNN inference model is performed, using the reliability-state tags as input, to generate output indicating the shape of a threshold-voltage-shift read-error (TVS-RE) curve. Threshold Voltage Shift Offset (TVSO) values are identified corresponding to a minimum value of the TVS-RE curve and a read is performed using a threshold-voltage-shift read at the identified TVSO values.

公开(公告)号：US20220270698A1

公开(公告)日：2022-08-25

申请号：US17234993

申请日：2021-04-20

Applicant: Microchip Technology Inc.

Inventor： Lorenzo Zuolo ,  Rino Micheloni

IPC: G11C16/34 ,  G11C16/10 ,  G11C16/14 ,  G11C16/26 ,  G11C16/08 ,  G06N3/04 ,  G06N3/063 ,  G06N5/04

Abstract: A method for reading a flash memory device includes storing configuration files of reliability-state Classification Neural Network (CNN) models and Regression Neural Network (RNN) inference models, and storing reliability-state tags corresponding to reliability states. The current number of P/E cycles is identified and a reliability-state CNN model is selected corresponding to the current number of P/E cycles. A neural network operation of the selected reliability-state CNN model is performed to identify a predicted reliability state. Corresponding reliability-state tags are identified and a corresponding RNN inference model is selected. A neural network operation of the selected RNN inference model is performed, using the reliability-state tags as input, to generate output indicating the shape of a threshold-voltage-shift read-error (TVS-RE) curve. Threshold Voltage Shift Offset (TVSO) values are identified corresponding to a minimum value of the TVS-RE curve and a read is performed using a threshold-voltage-shift read at the identified TVSO values.