公开(公告)号：US11270774B2

公开(公告)日：2022-03-08

申请号：US17079594

申请日：2020-10-26

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Gianfranco Valeri ,  Violante Moschiano ,  Walter Di-Francesco

IPC: G11C13/00 ,  G11C16/28 ,  G06F11/10 ,  G11C16/10

Abstract: Memory might include controller configured to apply a first predetermined voltage level to a capacitance of a sense circuit during a first sensing stage of a sensing operation, determine a first value of an output of the particular sense circuit while applying the first predetermined voltage level, apply a second predetermined voltage level to the capacitance during a second sensing stage of the sensing operation, determine a second value of the output of the particular sense circuit while applying the second predetermined voltage level, determine a particular voltage level in response to at least the first value and the second value, and apply the particular voltage level to the capacitance during a final sensing stage of the sensing operation.

公开(公告)号：US20210043262A1

公开(公告)日：2021-02-11

申请号：US17079594

申请日：2020-10-26

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Gianfranco Valeri ,  Violante Moschiano ,  Walter Di-Francesco

IPC: G11C16/28 ,  G06F11/10 ,  G11C13/00 ,  G11C16/10

Abstract: Memory might include controller configured to apply a first predetermined voltage level to a capacitance of a sense circuit during a first sensing stage of a sensing operation, determine a first value of an output of the particular sense circuit while applying the first predetermined voltage level, apply a second predetermined voltage level to the capacitance during a second sensing stage of the sensing operation, determine a second value of the output of the particular sense circuit while applying the second predetermined voltage level, determine a particular voltage level in response to at least the first value and the second value, and apply the particular voltage level to the capacitance during a final sensing stage of the sensing operation.