公开(公告)号：US11205338B2

公开(公告)日：2021-12-21

申请号：US16721098

申请日：2019-12-19

Applicant: Micron Technology, Inc.

Inventor： Pin-Chou Chiang ,  Michele Piccardi ,  Theodore T. Pekny

IPC: G08B29/06 ,  G08B29/12 ,  H03H11/12 ,  G04F10/04 ,  H03H7/01

Abstract: A resistor-capacitor (RC) sensor circuit of an electronic device is driven to a drive voltage using a representative copy of a current that drives an electronic circuit line of the electronic device. The RC sensor circuit is to sample voltages that are indicative of an RC time constant of the electronic circuit line. A first sample voltage is determined by sampling a first representative voltage generated at the RC sensor circuit by driving the RC sensor circuit with the representative copy of the current over a first time period. A second sample voltage is determined by sampling a second representative voltage generated at the RC sensor circuit by driving the RC sensor circuit with the representative copy of the current over a second time period. A ratio of the first sample voltage and the second sample voltage is indicative of the RC time constant of the electronic circuit line.

公开(公告)号：US20210335125A1

公开(公告)日：2021-10-28

申请号：US17369816

申请日：2021-07-07

Applicant: Micron Technology, Inc.

Inventor： Pin-Chou Chiang ,  Michele Piccardi ,  Theodore T. Pekny

IPC: G08B29/12 ,  G08B29/06 ,  H03K17/18

Abstract: A resistor-capacitor (RC) sensor circuit includes an integration capacitor configured to integrate a representative copy of a current that drives an electronic circuit line. The integration capacitor is configured to integrate over a first time period to generate a first representative voltage and over a second time period to generate a second representative voltage. The RC sensor circuit includes a sampling circuit coupled to the integration capacitor and configured to sample the first representative voltage and the second representative voltage. A ratio of the first sampled voltage and the second sampled voltage is indicative of an RC time constant of the electronic circuit line.

公开(公告)号：US11081170B2

公开(公告)日：2021-08-03

申请号：US16225036

申请日：2018-12-19

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Pin-Chou Chiang

IPC: G11C11/56 ,  G11C16/04 ,  G11C16/10 ,  G11C16/34

Abstract: Methods of operating a memory, and memory configured to perform similar methods, may include applying a first plurality of programming pulses to control gates of a plurality of memory cells during a particular programming operation and applying a second plurality of programming pulses to the control gates of the plurality of memory cells during a subsequent programming operation, wherein the first plurality of programming pulses have a particular slope, and wherein the second plurality of programming pulses have a different slope less than the particular slope. Methods of configuring a memory may include characterizing a read window budget for a programming operation of the memory as a function of a programming step voltage for a plurality of memory cell ages.