公开(公告)号：US10784212B2

公开(公告)日：2020-09-22

申请号：US16236167

申请日：2018-12-28

Applicant: Micron Technology, Inc.

Inventor： Hyunsuk Chun ,  Sheng Wei Yang ,  Shams U. Arifeen

IPC: H01L23/00 ,  H01L23/532 ,  H01L23/58 ,  H01L21/768 ,  H01L23/498

Abstract: Semiconductor devices having metallization structures including crack-inhibiting structures, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a metallization structure formed over a semiconductor substrate. The metallization structure can include a bond pad electrically coupled to the semiconductor substrate via one or more layers of conductive material, and an insulating material—such as a low-κ dielectric material—at least partially around the conductive material. The metallization structure can further include a crack-inhibiting structure positioned beneath the bond pad between the bond pad and the semiconductor substrate. The crack-inhibiting structure can include a barrier member extending vertically from the bond pad toward the semiconductor substrate and configured to inhibit crack propagation through the insulating material.

公开(公告)号：US20200211983A1

公开(公告)日：2020-07-02

申请号：US16236167

申请日：2018-12-28

Applicant: Micron Technology, Inc.

Inventor： Hyunsuk Chun ,  Sheng Wei Yang ,  Shams U. Arifeen

IPC: H01L23/00 ,  H01L23/532 ,  H01L23/58 ,  H01L23/498 ,  H01L21/768

Abstract: Semiconductor devices having metallization structures including crack-inhibiting structures, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a metallization structure formed over a semiconductor substrate. The metallization structure can include a bond pad electrically coupled to the semiconductor substrate via one or more layers of conductive material, and an insulating material—such as a low-low-κ dielectric material—at least partially around the conductive material. The metallization structure can further include a crack-inhibiting structure positioned beneath the bond pad between the bond pad and the semiconductor substrate. The crack-inhibiting structure can include a barrier member extending vertically from the bond pad toward the semiconductor substrate and configured to inhibit crack propagation through the insulating material.