公开(公告)号：US20210057266A1

公开(公告)日：2021-02-25

申请号：US16549594

申请日：2019-08-23

Applicant: Micron Technology, Inc.

Inventor： Vivek Yadav ,  Shen Hu ,  Kangle Li ,  Sanjeev Sapra

IPC: H01L21/762 ,  H01L27/108 ,  H01L21/02 ,  H01L21/67

Abstract: An example method includes patterning a working surface of a semiconductor wafer. The example method includes performing a first deposition of a dielectric material in high aspect ratio trenches. The example method further includes performing a high pressure, high temperature vapor etch to recess the dielectric material in the trenches and performing a second deposition of the dielectric material to continue filling the trenches.