Semiconductor structure formation

    公开(公告)号:US11469103B2

    公开(公告)日:2022-10-11

    申请号:US17153997

    申请日:2021-01-21

    Abstract: Methods, apparatuses, and systems related to semiconductor structure formation are described. An example method includes forming an opening through silicon (Si) material, formed over a semiconductor substrate, to a first depth to form pillars of Si material. The example method further includes depositing an isolation material within the opening to fill the opening between the Si pillars. The example method further includes removing a portion of the isolation material from between the pillars to a second depth to create a second opening between the pillars and defining inner sidewalls between the pillars. The example method further includes depositing an enhancer material over a top surface of the pillars and along the inner sidewalls of the pillars down to a top portion of the isolation material.

    Semiconductor structure formation

    公开(公告)号:US11387369B2

    公开(公告)日:2022-07-12

    申请号:US16723259

    申请日:2019-12-20

    Abstract: An example apparatus includes forming a working surface of a substrate material. The example apparatus includes trench formed between two semiconductor structures on the working surface of the substrate material. The example apparatus further includes access lines formed on neighboring sidewalls of the semiconductor structures opposing a channel region separating a first source/drain region and a second source/drain region. The example apparatus further includes a time-control formed inhibitor material formed over a portion of the sidewalls of the semiconductor structures. The example apparatus further includes a dielectric material formed over the semiconductor structures to enclose a non-solid space between the access lines.

    Semiconductor structure formation

    公开(公告)号:US11322388B2

    公开(公告)日:2022-05-03

    申请号:US16549594

    申请日:2019-08-23

    Abstract: An example method includes patterning a working surface of a semiconductor wafer. The example method includes performing a first deposition of a dielectric material in high aspect ratio trenches. The example method further includes performing a high pressure, high temperature vapor etch to recess the dielectric material in the trenches and performing a second deposition of the dielectric material to continue filling the trenches.

    SEMICONDUCTOR STRUCTURE FORMATION

    公开(公告)号:US20210193843A1

    公开(公告)日:2021-06-24

    申请号:US16723259

    申请日:2019-12-20

    Abstract: An example apparatus includes forming a working surface of a substrate material. The example apparatus includes trench formed between two semiconductor structures on the working surface of the substrate material. The example apparatus further includes access lines formed on neighboring sidewalls of the semiconductor structures opposing a channel region separating a first source/drain region and a second source/drain region. The example apparatus further includes a time-control formed inhibitor material formed over a portion of the sidewalls of the semiconductor structures. The example apparatus further includes a dielectric material formed over the semiconductor structures to enclose a non-solid space between the access lines.

    APPARATUSES INCLUDING ELONGATE PILLARS OF ACCESS DEVICES

    公开(公告)号:US20220102351A1

    公开(公告)日:2022-03-31

    申请号:US17643316

    申请日:2021-12-08

    Abstract: A method of forming an apparatus comprises forming pillar structures extending from a base material. Upper portions of the pillar structures may exhibit a lateral width that is relatively greater than a lateral width of lower portions of the pillar structures. The method also comprises forming access lines laterally adjacent to the lower portions of the pillar structures and forming digit lines above upper surfaces of the pillar structures. Memory devices and electronic systems are also described.

    SEMICONDUCTOR STRUCTURE FORMATION

    公开(公告)号:US20210143011A1

    公开(公告)日:2021-05-13

    申请号:US17153997

    申请日:2021-01-21

    Abstract: Methods, apparatuses, and systems related to semiconductor structure formation are described. An example method includes forming an opening through silicon (Si) material, formed over a semiconductor substrate, to a first depth to form pillars of Si material. The example method further includes depositing an isolation material within the opening to fill the opening between the Si pillars. The example method further includes removing a portion of the isolation material from between the pillars to a second depth to create a second opening between the pillars and defining inner sidewalls between the pillars. The example method further includes depositing an enhancer material over a top surface of the pillars and along the inner sidewalls of the pillars down to a top portion of the isolation material.

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