公开(公告)号：US20060249763A1

公开(公告)日：2006-11-09

申请号：US10538013

申请日：2004-02-10

申请人： Chiori Mochizuki ,  Masakazu Morishita ,  Minoru Watanabe ,  Takamasa Ishii ,  Keiichi Nomura

发明人： Chiori Mochizuki ,  Masakazu Morishita ,  Minoru Watanabe ,  Takamasa Ishii ,  Keiichi Nomura

IPC分类号： H01L31/113

CPC分类号： H01L27/14658 ,  H04N5/32

摘要： In a radiation image pickup device including: a sensor element for converting radiation into an electrical signal; and a thin film transistor connected to the sensor element, an electrode of the sensor element connected to the thin film transistor is disposed above the thin film transistor, and that the thin film transistor has a top gate type structure in which a semiconductor layer, a gate insulating layer, and a gate electrode layer are laminated in this order on a substrate, so that a channel portion of the thin film transistor is protected by a gate electrode, thereby providing stable TFT characteristics without undesirable turning ON any of the TFT elements due to the back gate effect by the fluctuation in electric potentials corresponding to outputs from the sensor electrodes, and thereby greatly improving image quality.

公开(公告)号：US07126127B2

公开(公告)日：2006-10-24

申请号：US10954194

申请日：2004-10-01

申请人： Minoru Watanabe ,  Masakazu Morishita ,  Chiori Mochizuki ,  Keiichi Nomura ,  Takamasa Ishii

发明人： Minoru Watanabe ,  Masakazu Morishita ,  Chiori Mochizuki ,  Keiichi Nomura ,  Takamasa Ishii

IPC分类号： G01T1/24

CPC分类号： H01L27/14643 ,  H01L27/14676

摘要： In an image pick-up apparatus, a plurality of pixels, each pairing a semiconductor conversion element for converting an incident electromagnetic wave to an electric signal and a thin film transistor connected to the semiconductor conversion element, is arranged in a two-dimensional state on a substrate. The image pick-up apparatus includes gate wiring to which gate electrodes of thin film transistors of a plurality of pixels arranged in one direction are commonly connected, and signal wiring to which source electrodes or drain electrodes of thin film transistors of a plurality of pixels arranged in a direction different from the one direction are commonly connected on the substrate. Protection layers are arranged on the thin film transistors, the gate wiring and the signal wiring. The protection layers formed at least at the same time. Then, the protection layers are removed in at least a part or all of regions in which the semiconductor conversion elements are formed.

摘要翻译： 在图像拾取装置中，将与入射电磁波进行转换的半导体转换元件和电连接的半导体转换元件和与半导体变换元件连接的薄膜晶体管的多个像素配置成二维状态 底物。 图像拾取装置包括栅极配线，多个像素排列的多个像素的薄膜晶体管的栅电极共同连接到该栅极布线，多个像素的薄膜晶体管的源电极或漏电极布置在其上 在与该方向不同的方向上共同连接在基板上。 保护层布置在薄膜晶体管，栅极布线和信号布线上。 保护层至少在同一时间形成。 然后，在其中形成有半导体转换元件的区域的至少一部分或全部中去除保护层。

公开(公告)号：US20060065944A1

公开(公告)日：2006-03-30

申请号：US11229630

申请日：2005-09-20

申请人： Chiori Mochizuki ,  Masakazu Morishita ,  Keiichi Nomura ,  Minoru Watanabe ,  Takamasa Ishii

发明人： Chiori Mochizuki ,  Masakazu Morishita ,  Keiichi Nomura ,  Minoru Watanabe ,  Takamasa Ishii

IPC分类号： H01L31/00

CPC分类号： H01L27/14609 ,  H01L27/14636 ,  H01L27/14676

摘要： To improve a sensor resetting method and thereby implement a high rate at which a moving image is read, the invention provides an image pickup apparatus and a radiation image pickup apparatus including: a plurality of pixels arranged on a substrate in row and column directions, each pixel having a conversion element and a transfer switching element; a drive wiring connected to a plurality of the transfer switching elements in the row direction; and a conversion element wiring connected to a plurality of the conversion elements in the row direction, wherein a reset switching element is disposed between the conversion element wiring and a reset wiring for supplying a reset voltage for resetting the conversion element, and a bias switching element is disposed between the conversion element wiring and a bias wiring for supplying a bias voltage for operating the conversion element.

公开(公告)号：US07812317B2

公开(公告)日：2010-10-12

申请号：US12205280

申请日：2008-09-05

申请人： Minoru Watanabe ,  Chiori Mochizuki ,  Keiichi Nomura ,  Takamasa Ishii

发明人： Minoru Watanabe ,  Chiori Mochizuki ,  Keiichi Nomura ,  Takamasa Ishii

IPC分类号： G01T1/20 ,  G01T1/24 ,  H01L21/00

CPC分类号： H01L27/14692 ,  H01L27/14609 ,  H01L27/14659 ,  H01L27/14663

摘要： A radiation detecting apparatus according to the present invention includes: pixels including switching elements arranged on an insulating substrate and conversion elements arranged on the switching elements to convert a radiation into electric carriers, the switching elements and the conversion elements are connected with each other, the pixels two-dimensionally arranged on the insulating substrate in a matrix; gate wiring commonly connected with a plurality of switching elements arranged in a row direction on the insulating substrate; signal wiring commonly connected with a plurality of switching elements arranged in a column direction; and a plurality of insulating films arranged between the switching elements and the conversion elements, wherein at least one of the gate wiring and the signal wiring is arranged to be put between the plurality of insulating films.

摘要翻译： 根据本发明的放射线检测装置包括：包括布置在绝缘基板上的开关元件和布置在开关元件上的转换元件以将辐射转换成电载体的像素，开关元件和转换元件彼此连接， 以矩阵二维排列在绝缘基板上的像素; 通常与在绝缘基板上排列成行方向的多个开关元件连接的栅极布线; 通常与沿列方向布置的多个开关元件连接的信号线; 以及布置在所述开关元件和所述转换元件之间的多个绝缘膜，其中所述栅极布线和所述信号布线中的至少一个布置成放置在所述多个绝缘膜之间。

公开(公告)号：US07655920B2

公开(公告)日：2010-02-02

申请号：US12184522

申请日：2008-08-01

申请人： Chiori Mochizuki ,  Keiichi Nomura ,  Minoru Watanabe ,  Takamasa Ishii

发明人： Chiori Mochizuki ,  Keiichi Nomura ,  Minoru Watanabe ,  Takamasa Ishii

IPC分类号： G01T1/26

CPC分类号： H01L27/14603 ,  G01T1/2928 ,  H01L27/124 ,  H01L27/14632 ,  H01L27/14663 ,  H01L31/1136

摘要： A conversion apparatus includes pixels including switching elements provided on an insulating substrate and conversion elements disposed over the switching elements and connected to the switching elements. Conductive lines are coupled to the pixels and have terminal elements for providing a connection to an external circuit. The terminal elements are disposed in a metal layer that is formed over the conversion elements. The conversion apparatus further includes a transparent conductive layer covering surfaces of the terminal elements, and a protective layer covering edges of the terminal elements and having openings.

摘要翻译： 一种转换装置包括像素，其包括设置在绝缘基板上的开关元件和设置在开关元件上并连接到开关元件的转换元件。 导电线耦合到像素并且具有用于提供到外部电路的连接的端子元件。 端子元件设置在形成在转换元件上的金属层中。 转换装置还包括覆盖端子元件的表面的透明导电层和覆盖端子元件边缘并具有开口的保护层。

公开(公告)号：US07629564B2

公开(公告)日：2009-12-08

申请号：US11912373

申请日：2006-07-10

申请人： Chiori Mochizuki ,  Keiichi Nomura ,  Minoru Watanabe ,  Takamasa Ishii

发明人： Chiori Mochizuki ,  Keiichi Nomura ,  Minoru Watanabe ,  Takamasa Ishii

IPC分类号： H01L27/00

CPC分类号： H01L27/14609 ,  H01L27/12 ,  H01L27/124 ,  H01L27/14603 ,  H01L27/14665

摘要： A conversion apparatus of the present invention includes a plurality of pixels including switching elements and conversion elements. The pixels are arranged in a pixel region including a switching element region in which switching elements are arranged in row and column directions and a conversion element region in which conversion elements are arranged in row and column directions. A plurality of wirings are including a second metal layer are connected to the plurality of switching elements of the column direction. Plural bias wirings of a fourth metal layer are connected to plural conversion elements. An external signal wiring of the fourth metal layer outside the pixel region is connected to the signal wirings. An external bias wiring of a first metal layer outside the pixel region is connected to the plurality of bias wirings. The external signal wiring and the external bias wiring intersect each other.

摘要翻译： 本发明的转换装置包括包括开关元件和转换元件的多个像素。 像素布置在包括开关元件区域中的开关元件区域的像素区域中，其中开关元件被排列在行和列方向上，并且转换元件区域中转换元件被排列成行和列方向。 多个布线包括第二金属层连接到列方向的多个开关元件。 第四金属层的多个偏置布线连接到多个转换元件。 像素区域外的第四金属层的外部信号配线与信号配线连接。 像素区域外的第一金属层的外部偏置布线连接到多个偏置布线。 外部信号线和外部偏置配线相互交叉。

公开(公告)号：US20090127435A1

公开(公告)日：2009-05-21

申请号：US11912373

申请日：2006-07-10

申请人： Chiori Mochizuki ,  Keiichi Nomura ,  Minoru Watanabe ,  Takamasa Ishii

发明人： Chiori Mochizuki ,  Keiichi Nomura ,  Minoru Watanabe ,  Takamasa Ishii

IPC分类号： H01L27/00

CPC分类号： H01L27/14609 ,  H01L27/12 ,  H01L27/124 ,  H01L27/14603 ,  H01L27/14665

摘要： A conversion apparatus of the present invention includes a plurality of pixels including switching elements and conversion elements. The pixels are arranged in a pixel region including a switching element region in which switching elements are arranged in row and column directions and a conversion element region in which conversion elements are arranged in row and column directions. A plurality of wirings are including a second metal layer are connected to the plurality of switching elements of the column direction. Plural bias wirings of a fourth metal layer are connected to plural conversion elements. An external signal wiring of the fourth metal layer outside the pixel region is connected to the signal wirings. An external bias wiring of a first metal layer outside the pixel region is connected to the plurality of bias wirings. The external signal wiring and the external bias wiring intersect each other.

摘要翻译： 本发明的转换装置包括包括开关元件和转换元件的多个像素。 像素布置在包括开关元件区域中的开关元件区域的像素区域中，开关元件区域沿行和列方向排列，转换元件区域中的转换元件排列成行和列方向。 多个布线包括第二金属层连接到列方向的多个开关元件。 第四金属层的多个偏置布线连接到多个转换元件。 像素区域外的第四金属层的外部信号配线与信号配线连接。 像素区域外的第一金属层的外部偏置布线连接到多个偏置布线。 外部信号线和外部偏置配线相互交叉。

公开(公告)号：US20060255239A1

公开(公告)日：2006-11-16

申请号：US11486102

申请日：2006-07-14

申请人： Minoru Watanabe ,  Masakazu Morishita ,  Chiori Mochizuki ,  Keiichi Nomura ,  Takamasa Ishii

发明人： Minoru Watanabe ,  Masakazu Morishita ,  Chiori Mochizuki ,  Keiichi Nomura ,  Takamasa Ishii

IPC分类号： H01J40/14

CPC分类号： H01L27/14643 ,  H01L27/14676

摘要： In an image pick-up apparatus, a plurality of pixels, each pairing a semiconductor conversion element for converting an incident electromagnetic wave to an electric signal and a thin film transistor connected to the semiconductor conversion element, is arranged in a two-dimensional state on a substrate. The image pick-up apparatus includes gate wiring to which gate electrodes of thin film transistors of a plurality of pixels arranged in one direction are commonly connected, and signal wiring to which source electrodes or drain electrodes of thin film transistors of a plurality of pixels arranged in a direction different from the one direction are commonly connected on the substrate. Protection layers are arranged on the thin film transistors, the gate wiring and the signal wiring. The protection layers formed at least at the same time. Then, the protection layers are removed in at least a part or all of regions in which the semiconductor conversion elements are formed.

公开(公告)号：US20050263709A1

公开(公告)日：2005-12-01

申请号：US10954194

申请日：2004-10-01

申请人： Minoru Watanabe ,  Masakazu Morishita ,  Chiori Mochizuki ,  Keiichi Nomura ,  Takamasa Ishii

发明人： Minoru Watanabe ,  Masakazu Morishita ,  Chiori Mochizuki ,  Keiichi Nomura ,  Takamasa Ishii

IPC分类号： G01T1/20 ,  A61B6/00 ,  G01T1/24 ,  H01L27/14 ,  H01L27/146 ,  H01L31/036 ,  H04N5/32

CPC分类号： H01L27/14643 ,  H01L27/14676

摘要： In an image pick-up apparatus, a plurality of pixels, each pairing a semiconductor conversion element for converting an incident electromagnetic wave to an electric signal and a thin film transistor connected to the semiconductor conversion element, is arranged in a two-dimensional state on a substrate. The image pick-up apparatus includes gate wiring to which gate electrodes of thin film transistors of a plurality of pixels arranged in one direction are commonly connected, and signal wiring to which source electrodes or drain electrodes of thin film transistors of a plurality of pixels arranged in a direction different from the one direction are commonly connected on the substrate. Protection layers are arranged on the thin film transistors, the gate wiring and the signal wiring. The protection layers formed at least at the same time. Then, the protection layers are removed in at least a part or all of regions in which the semiconductor conversion elements are formed.

摘要翻译： 在图像拾取装置中，将与入射电磁波进行转换的半导体转换元件和电连接的半导体转换元件和与半导体变换元件连接的薄膜晶体管的多个像素配置成二维状态 底物。 图像拾取装置包括栅极配线，多个像素排列的多个像素的薄膜晶体管的栅电极共同连接到该栅极布线，多个像素的薄膜晶体管的源电极或漏电极布置在其上 在与该方向不同的方向上共同连接在基板上。 保护层布置在薄膜晶体管，栅极布线和信号布线上。 保护层至少在同一时间形成。 然后，在其中形成有半导体转换元件的区域的至少一部分或全部中去除保护层。

公开(公告)号：US08154641B2

公开(公告)日：2012-04-10

申请号：US12245391

申请日：2008-10-03

申请人： Keiichi Nomura ,  Masakazu Morishita ,  Chiori Mochizuki ,  Minoru Watanabe ,  Takamasa Ishii

发明人： Keiichi Nomura ,  Masakazu Morishita ,  Chiori Mochizuki ,  Minoru Watanabe ,  Takamasa Ishii

IPC分类号： H04N3/14 ,  H01L27/00

CPC分类号： H04N5/32 ,  H01L27/14603 ,  H01L27/14658

摘要： A solid-state image pickup device according to the present invention has a plurality of photoelectric conversion elements and a plurality of switching elements. The photoelectric conversion element is formed above at least one switching element, and a shielding electrode layer is disposed between the switching elements and the photoelectric conversion elements. Further, a radiation image pickup device according to the present invention has a radiation conversion layer for directly converting radiation into electric charges, and a plurality of switching elements, and has the radiation conversion layer formed above one or more switching elements, and a shielding electrode layer disposed between the switching elements and the radiation conversion layer.

摘要翻译： 根据本发明的固态图像拾取装置具有多个光电转换元件和多个开关元件。 光电转换元件形成在至少一个开关元件上方，并且屏蔽电极层设置在开关元件和光电转换元件之间。 此外，根据本发明的放射线摄像装置具有用于将辐射直接转换为电荷的辐射转换层和多个开关元件，并且具有形成在一个或多个开关元件上方的辐射转换层和屏蔽电极 层之间设置在开关元件和辐射转换层之间。