摘要:
According to the present invention, for a pattern inspection apparatus that compares images in corresponding areas of two patterns that are identical and that determines an unmatched portion between the images is a defect, a plurality of detection systems and a plurality of corresponding image comparison methods are provided. With this configuration, the affect of uneven brightnesses for a pattern that occurs due to differences in film thicknesses can be reduced, a highly sensitive pattern inspection can be performed, a variety of defects can be revealed, and the pattern inspection apparatus can be applied for processing performed within a wide range. Furthermore, the pattern inspection apparatus also includes a unit for converting the tone of image signals of comparison images for a plurality of different processing units, and when a difference in brightness occurs in the same pattern of the images, a defect can be correctly detected.
摘要:
A defect inspection apparatus includes a movable stage for mounting a substrate having circuit patterns as an object of inspection, an irradiation optical system which irradiates a slit-shaped light beam from an oblique direction to the circuit patterns of the substrate, a detection optical system which includes an image sensor for receiving reflected/scattered light from the substrate by irradiation of the slit-shaped light beam and converting the received light into a signal, and an image processor which processes the signal. The irradiation optical system includes a cylindrical lens and a coherency reduction optical system, which receives the light beam and emits a plurality of slit-shaped light sub-beams which are spatially reduced in coherency in a light-converging direction of the cylindrical lens. The cylindrical lens focuses the plurality of slit-shaped light sub-beams into the slit-shaped light beam irradiated to the surface of the substrate.
摘要:
A defect inspection apparatus includes an irradiation optical system 20, a detection optical system 30, and an image processor 40. In the irradiation optical system, a mirror 2603 is disposed to reflect downward a beam flux that has been guided to a first or second optical path, and a cylindrical lens 251 and an inclined mirror 2604 are disposed to focus the beam flux that has been directed downward by the mirror, at an inclination angle from a required oblique direction extending horizontally, onto a substrate 1 to be inspected, as a slit-shaped beam 90.
摘要:
The invention provides a defect inspection method and a defect inspection device which enable a defect to be inspected regardless of optical conditions. The invention comprises the steps of setting a target local region and a plurality of corresponding local regions in the image signals, the target local region including a target pixel and an area surrounding the target pixel, the corresponding local regions including pixels corresponding to the target pixel and areas surrounding the corresponding pixels; searching similarities between the image signal of the target local region and the image signals of the plurality of corresponding local regions; determining a plurality of image signals that represent corresponding local regions and are similar to the image signal of the target local region; and comparing the image signal of the target local region with the image signals that represent the corresponding local regions.
摘要:
According to the present invention, for a pattern inspection apparatus that compares images in corresponding areas of two patterns that are identical and that determines an unmatched portion between the images is a defect, a plurality of detection systems and a plurality of corresponding image comparison methods are provided. With this configuration, the affect of uneven brightnesses for a pattern that occurs due to differences in film thicknesses can be reduced, a highly sensitive pattern inspection can be performed, a variety of defects can be revealed, and the pattern inspection apparatus can be applied for processing performed within a wide range. Furthermore, the pattern inspection apparatus also includes a unit for converting the tone of image signals of comparison images for a plurality of different processing units, and when a difference in brightness occurs in the same pattern of the images, a defect can be correctly detected.
摘要:
This invention provides a defect inspection method and apparatus that can easily and quickly determine, from among a plurality of inspection conditions, a condition that allows for an inspection with high sensitivity. The inspection apparatus has a variety of optical functions to cover a variety of kinds of defects to be inspected (shape, material, nearby pattern, etc.). For each optical function, grayscale depths of defects that the operator wants detected and of pseudo defects that he or she wants undetected are accumulated for future use, so that conditions conducive to a higher sensitivity and a lower pseudo defect detection rate can be selected efficiently. Conditions that can be selected for optical systems include a bright-field illumination, a dark-field illumination and a bright-/dark-field composite illumination, illumination wavelength bands, polarization filters and spatial filters.
摘要:
This invention provides a defect inspection method and apparatus that can easily and quickly determine, from among a plurality of inspection conditions, a condition that allows for an inspection with high sensitivity. The inspection apparatus has a variety of optical functions to cover a variety of kinds of defects to be inspected (shape, material, nearby pattern, etc.). For each optical function, grayscale depths of defects that the operator wants detected and of pseudo defects that he or she wants undetected are accumulated for future use, so that conditions conducive to a higher sensitivity and a lower pseudo defect detection rate can be selected efficiently. Conditions that can be selected for optical systems include a bright-field illumination, a dark-field illumination and a bright-/dark-field composite illumination, illumination wavelength bands, polarization filters and spatial filters.
摘要:
The present invention relates to a pattern defect inspection apparatus, wherein light emitted from an illumination source capable of outputting a plurality of wavelengths is linearly illuminated by an illuminating optical system. Diffracted or scattered light due to a circuit pattern or defect on a wafer is collected by an imaging optical system onto a line sensor and converted into a digital signal, and the defect is detected by a signal processing section. Then, the defect can be detected with high sensitivity since a surface to be formed by an optical axis of the illuminating optical system and an optical axis of the imaging optical system is almost collimated to a direction of a wiring pattern and further since an angle to be formed by the optical axis of the imaging optical system and the wafer is set to an angle with less diffracted light from the pattern. Thereby, the pattern defect inspection detecting various defects on the wafer with high sensitivity at high speed can be achieved.
摘要:
In a pattern inspection apparatus, influences of pattern brightness variations that is caused in association with, for example, a film thickness difference or a pattern width variation can be reduced, high sensitive pattern inspection can be implemented, and a variety of defects can be detected. Thereby, the pattern inspection apparatus adaptable to a broad range of processing steps is realized. In order to realize this, the pattern inspection apparatus of the present invention performs comparison between images of regions corresponding to patterns formed to be same patterns, thereby determining mismatch portions across the images to be defects. The apparatus includes multiple sensors capable of synchronously acquiring images of shiftable multiple detection systems different from one another, and an image comparator section corresponding thereto. In addition, the apparatus includes means of detecting a statistical offset value from the feature amount to be a defect, thereby enabling the defect to be properly detected even when a brightness difference is occurring in association with film a thickness difference in a wafer.
摘要:
A defect inspection apparatus includes an irradiation optical system 20, a detection optical system 30, and an image processor 40. In the irradiation optical system, a mirror 2603 is disposed to reflect downward a beam flux that has been guided to a first or second optical path, and a cylindrical lens 251 and an inclined mirror 2604 are disposed to focus the beam flux that has been directed downward by the mirror, at an inclination angle from a required oblique direction extending horizontally, onto a substrate 1 to be inspected, as a slit-shaped beam 90.