公开(公告)号：US20210043808A1

公开(公告)日：2021-02-11

申请号：US16736286

申请日：2020-01-07

Applicant: National Taiwan University

Inventor： Ching-Fuh Lin ,  Chun-Yu Lin ,  Yi-Shan Lin ,  Jung-Kuan Huang

IPC: H01L33/50 ,  H01L33/00

Abstract: An embodiment of the present invention provides a micro light emitting diode (LED) array and its manufacturing method. The micro-LED includes a substrate, an epitaxial layer formed on the substrate, and a conversion film formed on the epitaxial layer. Pixels can be defined through lithography, and the pixel size can be very small. This method is characterized in that a mass transfer is not required.

公开(公告)号：US10392110B2

公开(公告)日：2019-08-27

申请号：US15824994

申请日：2017-11-28

Applicant: National Taiwan University

Inventor： Ching-Fuh Lin ,  Ta-Jung Lin

IPC: B64C39/02 ,  B64D27/24

Abstract: A solar cell module for an unmanned aerial vehicle is disclosed. The solar cell module includes a carrier base and a solar cell unit. The carrier base is disposed on the unmanned aerial vehicle. The solar cell unit has a plurality of solar cells attached to the carrier body. A ratio of the power provided by the solar cell unit to the weight of the solar cell module is equal to or greater than 0.1 (W/g).

公开(公告)号：US20220352430A1

公开(公告)日：2022-11-03

申请号：US17863897

申请日：2022-07-13

Applicant: National Taiwan University

Inventor： Ching-Fuh Lin ,  Chun-Yu Lin ,  Yi-Shan Lin ,  Jung-Kuan Huang

IPC: H01L33/50 ,  H01L33/00

Abstract: An embodiment of the present invention provides a micro light emitting diode (LED) array and its manufacturing method. The micro-LED includes a substrate, an epitaxial layer formed on the substrate, and a conversion film formed on the epitaxial layer. Pixels can be defined through lithography, and the pixel size can be very small. This method is characterized in that a mass transfer is not required.

公开(公告)号：US20220209074A1

公开(公告)日：2022-06-30

申请号：US17217661

申请日：2021-03-30

Applicant: National Taiwan University

Inventor： Ching-Fuh Lin ,  Jung-Kuan Huang ,  Teng-Yi Huang ,  Yi-Shan Lin ,  Han-Yu Tsai

IPC: H01L33/50 ,  H01L25/075 ,  H01L33/56 ,  H01L33/58 ,  H01L33/60

Abstract: Embodiments of the present invention provide a light-emitting film, a light-emitting film array, a micro-light emitting diode (LED) array, and their manufacturing methods. In one embodiment, epitaxial layers are formed on a substrate, and a conversion film is formed on a corresponding epitaxial layer. Pixels can be defined through lithography with a very small pixel size. A mass transfer is unnecessary for this method. The produced light-emitting films and the conversion films are homogeneous films and are insoluble in water, and the manufacturing steps can be simplified due to the waterproofing function of the films.

公开(公告)号：US20210123806A1

公开(公告)日：2021-04-29

申请号：US16711110

申请日：2019-12-11

Applicant: National Taiwan University

Inventor： Ching-Fuh Lin

IPC: G01J3/28 ,  G01J3/10 ,  G01J3/50 ,  G02B21/33

Abstract: The present invention provides a spectral imaging apparatus and method featuring in that spectra are obtained from the captured photographs for composition analysis. In addition, the environment can be protected by using to the spectral imaging device and method. Furthermore, a true color photo can also be obtained.

公开(公告)号：US10734539B2

公开(公告)日：2020-08-04

申请号：US16294225

申请日：2019-03-06

Applicant: National Taiwan University

Inventor： Ching-Fuh Lin ,  Hung-Chieh Chuang ,  Meng-Jie Lin ,  Po-Jui Huang

IPC: H01L31/102 ,  H01L21/00 ,  H01L31/108 ,  H01L31/0224

Abstract: A photodetector is provided with a metal-semiconductor junction for measuring infrared radiation. In another embodiment, the photodetector includes structures to achieve localized surface plasmon resonance at the metal-semiconductor junction stimulated by incident light. The photodetector hence has prompted response and broadband spectra region for photon detection. The photodetector can be used for detecting varied powers of incident light with wavelength from visible to mid-infrared region (300 nm˜20 μm).

公开(公告)号：US10205043B2

公开(公告)日：2019-02-12

申请号：US15783195

申请日：2017-10-13

Applicant: National Taiwan University

Inventor： Ching-Fuh Lin ,  Hong-Jhang Syu

IPC: H01L31/06 ,  H01L51/42 ,  H01L51/00

Abstract: The present invention provides a hot-carrier photoelectric conversion method. The method includes a hot-carrier photoelectric conversion device having a P-type semiconductor layer, an N-type semiconductor layer, and an inorganic conducting light-absorbing layer. The inorganic conducting light-absorbing layer is formed between the P-type semiconductor layer and the N-type semiconductor layer, and an electric field is formed between the P-type semiconductor layer and the N-type semiconductor layer. Moreover, photons are absorbed by the inorganic conducting light-absorbing layer to create electrons and holes. The electrons and holes are respectively shifted by the electric field or diffusion effect to the N-type semiconductor layer and the P-type semiconductor layer, so that the electrons and the holes are respectively conducted outside to create electric energy. Further, the present invention increases the quantity of photons absorbed, and makes electrons and holes be quickly conducted outside, thereby increasing photoelectric conversion efficiency, and creating electric energy with a high open-circuit voltage and a high current.

公开(公告)号：US09818900B2

公开(公告)日：2017-11-14

申请号：US14183927

申请日：2014-02-19

Applicant: National Taiwan University

Inventor： Ching-Fuh Lin ,  Hsin-Yi Chen ,  Jiun-Jie Chao ,  Hong-Jhang Syu

IPC: H01L31/06 ,  H01L51/42 ,  H01L51/00

CPC classification number: H01L31/06 ,  H01L51/0039 ,  H01L51/4213 ,  Y02E10/549

Abstract: The present invention provides a hot-carrier photoelectric conversion method. The method includes a hot-carrier photoelectric conversion device having a P-type semiconductor layer, an N-type semiconductor layer, and an inorganic conducting light-absorbing layer. The inorganic conducting light-absorbing layer is formed between the P-type semiconductor layer and the N-type semiconductor layer, and an electric field is formed between the P-type semiconductor layer and the N-type semiconductor layer. Moreover, photons are absorbed by the inorganic conducting light-absorbing layer to create electrons and holes. The electrons and holes are respectively shifted by the electric field or diffusion effect to the N-type semiconductor layer and the P-type semiconductor layer, so that the electrons and the holes are respectively conducted outside to create electric energy. Further, the present invention increases the quantity of photons absorbed, and makes electrons and holes be quickly conducted outside, thereby increasing photoelectric conversion efficiency, and creating electric energy with a high open-circuit voltage and a high current.

公开(公告)号：US20140368625A1

公开(公告)日：2014-12-18

申请号：US14284837

申请日：2014-05-22

Applicant: National Taiwan University

Inventor： Ching-Fuh Lin

IPC: H04N13/04

CPC classification number: H04N13/324 ,  H04N13/341

Abstract: A three-dimensional (3D) image display device and a method thereof are provided. A first light filtering unit obtains a first RGB color light filtered from a first image, and a second light filtering unit obtains a second RGB color light filtered from a second image, to produce a left-eye image and a right-eye image, respectively, or an active light emitting panel produces a first image and a second image of different wavelengths. When a user is wearing glasses with different light filters on the left and right lenses to filter out the right-eye image and the left-eye image, respectively, the user receives 3D visual effects from the images.

Abstract translation: 提供了三维（3D）图像显示装置及其方法。 第一光滤波单元获得从第一图像滤波的第一RGB色光，第二光滤波单元获得从第二图像滤波的第二RGB色光，分别产生左眼图像和右眼图像 或主动发光面板产生不同波长的第一图像和第二图像。 当用户在左右镜头上佩戴具有不同光过滤器的眼镜时，分别滤出右眼图像和左眼图像，用户从图像接收3D视觉效果。

公开(公告)号：US08513660B2

公开(公告)日：2013-08-20

申请号：US13647232

申请日：2012-10-08

Applicant: National Taiwan University

Inventor： Jing-Shun Huang ,  Ching-Fuh Lin

IPC: H01L21/00

CPC classification number: H01L51/441 ,  H01L51/5088 ,  H01L51/5092 ,  Y02E10/549 ,  Y02P70/521

Abstract: A suspension or solution for organic optoelectronic device is disclosed in this invention. The composition of the suspension or solution includes at least one kind of micro/nano transition metal oxide and a solvent. The composition of the suspension or solution can selectively include at least one kind of transition metal oxide ions or a precursor of transition metal oxide. Moreover, the making method and applications of the suspension or solution is also disclosed in this invention.

Abstract translation: 本发明公开了一种用于有机光电子器件的悬浮液或溶液。 悬浮液或溶液的组成包括至少一种微/纳米过渡金属氧化物和溶剂。 悬浮液或溶液的组成可以选择性地包括至少一种过渡金属氧化物离子或过渡金属氧化物的前体。 此外，本发明也公开了悬浮液或溶液的制备方法和应用。