Current collimation for thin seed and direct plating
    11.
    发明申请
    Current collimation for thin seed and direct plating 审中-公开
    目前准种子为薄种子和直接电镀

    公开(公告)号:US20060102467A1

    公开(公告)日:2006-05-18

    申请号:US10988646

    申请日:2004-11-15

    IPC分类号: C25C3/16 C25B9/00 C25D17/00

    摘要: A method and apparatus for plating a conductive material onto a substrate is provided. The apparatus includes a fluid processing cell having a fluid basin configured to contain an electrolyte solution and having an opening configured to receive a substrate for processing, an anode assembly positioned in the fluid basin, and a collimator positioned in the fluid basin between the anode assembly and the opening.

    摘要翻译: 提供了一种用于将导电材料电镀到基底上的方法和装置。 该装置包括流体处理池,流体池被配置为容纳电解质溶液,并且具有构造成接收用于处理的基板的开口,定位在流体池中的阳极组件和位于阳极组件之间的流体池中的准直器 和开幕。