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公开(公告)号：US12104270B2
公开(公告)日：2024-10-01
申请号：US18311888
申请日：2023-05-03
申请人： FABRIC8LABS, INC.
发明人： Kareemullah Shaik , Andrew Edmonds , Ryan Nicholl , David Pain
CPC分类号： C25D3/02 , C25D17/007 , C25D21/14
摘要： A method of electroplating a target electrode comprises establishing a first electric current through an electrolytic solution, comprising a quantity of an electrically charged material, an initial electrode, and a transitional electrode, so that a quantity of the electrically charged material is converted to a quantity of an electrically neutral material, which is electroplated, as a deposit, onto the transitional electrode; and establishing a second electric current through the electrolytic solution, the transitional electrode, and the target electrode so that a quantity of the electrically neutral material from the deposit is converted to a quantity of the electrically charged material, which is dissolved into the electrolytic solution, and a quantity of the electrically charged material in the electrolytic solution is converted to a quantity of the electrically neutral material, which is electroplated onto the surface of the target electrode.
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公开(公告)号：US12104266B2
公开(公告)日：2024-10-01
申请号：US17974239
申请日：2022-10-26
发明人： Jaewon Choi , Jaesik Chung
IPC分类号： C25D17/00
CPC分类号： C25D17/004 , C25D17/001 , C25D17/007
摘要： A plating apparatus may include a body, a lip seal structure connected to the body, and a conductive liquid. The body may include a cathode. The lip seal structure may be configured to hold a wafer. The lip seal structure may include a bottom portion, a contact portion connected to the bottom portion and contacting the wafer, and at least one partition structure protruding from an upper surface of the bottom portion. The conductive liquid may cover the upper surface of the bottom portion and may be configured to electrically connect the cathode and the wafer.
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公开(公告)号：US20240279837A1
公开(公告)日：2024-08-22
申请号：US17790381
申请日：2021-06-17
申请人： EBARA CORPORATION
CPC分类号： C25D17/007 , C25D17/06 , C25D21/10
摘要： Provided is a resistor or the like that can improve uniformity of a plating film formed on a substrate. A resistor disposed between a substrate and an anode in a plating tank is provided. The resistor includes a first plurality of holes each formed on three or more reference circles being concentric and having different diameters and a second plurality of holes formed on an outer circumferential reference line surrounding the three or more reference circles, at least a part of the outer circumferential reference line being a trochoid curve.
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4.发明公开公开(公告)号：US20230193503A1
公开(公告)日：2023-06-22
申请号：US17998216
申请日：2021-05-03
申请人： SEMSYSCO GMBH
发明人： Andreas GLEISSNER , Franz MARKUT
CPC分类号： C25D21/10 , C25D17/06 , C25D17/001 , C25D17/007
摘要： The disclosure relates to a distribution system for a process fluid for chemical and/or electrolytic surface treatment of a rotatable substrate, an electrochemical deposition system for a chemical and/or electrolytic surface treatment of a substrate and a method for a chemical and/or electrolytic surface treatment of a substrate in a process fluid. The distribution system comprises a distribution body. The distribution body comprises a plurality of openings for the process fluid. The openings are arranged in a spiral-shaped pattern on a surface of the distribution body.
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公开(公告)号：US20230183881A1
公开(公告)日：2023-06-15
申请号：US17974239
申请日：2022-10-26
发明人： Jaewon CHOI , Jaesik CHUNG
IPC分类号： C25D17/00
CPC分类号： C25D17/004 , C25D17/001 , C25D17/007
摘要： A plating apparatus may include a body, a lip seal structure connected to the body, and a conductive liquid. The body may include a cathode. The lip seal structure may be configured to hold a wafer. The lip seal structure may include a bottom portion, a contact portion connected to the bottom portion and contacting the wafer, and at least one partition structure protruding from an upper surface of the bottom portion. The conductive liquid may cover the upper surface of the bottom portion and may be configured to electrically connect the cathode and the wafer.
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公开(公告)号：US20190233963A1
公开(公告)日：2019-08-01
申请号：US16330805
申请日：2017-09-07
CPC分类号： C25D5/022 , C25D5/00 , C25D7/12 , C25D17/007 , C25D17/06 , C25D17/12 , C25D21/04 , C25D21/12
摘要： An electrolytic processing jig configured to perform an electrolytic processing on a processing target substrate by using a processing liquid supplied to the processing target substrate includes a base body having a flat plate shape; and a direct electrode provided on a front surface of the base body and configured to be brought into contact with the processing liquid to apply a voltage between the processing target substrate and the direct electrode. An irregularity pattern is formed on a front surface of the electrolytic processing jig at a processing target substrate side.
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公开(公告)号：US10053792B2
公开(公告)日：2018-08-21
申请号：US14990573
申请日：2016-01-07
CPC分类号： C25D17/06 , C25D7/12 , C25D17/001 , C25D17/004 , C25D17/005 , C25D17/007 , C25D17/12
摘要： Disclosed herein are cups for engaging wafers during electroplating in clamshell assemblies and supplying electrical current to the wafers during electroplating. The cup can comprise an elastomeric seal disposed on the cup and configured to engage the wafer during electroplating, where upon engagement the elastomeric seal substantially excludes plating solution from a peripheral region of the wafer, and where the elastomeric seal and the cup are annular in shape, and comprise one or more contact elements for supplying electrical current to the wafer during electroplating, the one or more contact elements attached to and extending inwardly towards a center of the cup from a metal strip disposed over the elastomeric seal. A notch area of the cup can have a protrusion or an insulated portion on a portion of a bottom surface of the cup where the notch area is aligned with a notch in the wafer.
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公开(公告)号：US20180122699A1
公开(公告)日：2018-05-03
申请号：US15728777
申请日：2017-10-10
发明人： Shin Hasegawa
IPC分类号： H01L21/768 , H01L21/288 , H01L23/48 , H01L23/528 , H01L23/532 , H01L21/3065 , H01L31/02
CPC分类号： H01L21/76898 , C25D5/022 , C25D7/123 , C25D17/007 , H01L21/2885 , H01L21/3065 , H01L21/76841 , H01L21/76873 , H01L21/76879 , H01L23/481 , H01L23/5283 , H01L23/53238 , H01L31/02005 , H05K3/0017 , H05K3/421
摘要： Provided is a manufacturing method of an electronic component, the manufacturing method including steps of: preparing a substrate having a first primary surface and a second primary surface, a first conductor layer being disposed on the first primary surface, and the substrate having a through hole arranged to reach the first conductor layer; forming a second conductor layer on the second primary surface, on a side surface of the through hole, and on the first conductor layer located at a bottom of the through hole; and forming a third conductor layer in the through hole by supplying a current from the first conductor layers and the second conductor layers to perform electroplating.
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公开(公告)号：US09867293B1
公开(公告)日：2018-01-09
申请号：US15474466
申请日：2017-03-30
申请人： Jerry T. Fang
发明人： Jerry T. Fang
CPC分类号： H05K3/188 , C22C5/02 , C25D3/62 , C25D5/022 , C25D7/123 , C25D17/007 , H05K3/0073 , H05K2203/0723
摘要： A method of controlling alloy composition of deposited gold-tin alloy during electroplating of a large panel includes masking at least one planar surface of the panel with conductive material applied in a predetermined pattern. The masked panel is located at least partially within an electroplating solution including a gold-tin alloy in solution at a predetermined gold:tin ratio. Electrical current applied to the masked panel is conducted across the planar surface via the conductive material to induce a predetermined electrical current distribution across the planar surface and thereby pull gold ions and tin ions from the electroplating solution. The pulled ions are deposited upon a supermajority of an unmasked area of the masked panel. The predetermined pattern is selected to achieve deposition of the gold-tin alloy with substantially uniform alloy composition, directly corresponding to the predetermined gold:tin ratio, across the supermajority of the unmasked area of the masked panel.
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公开(公告)号：US09765443B2
公开(公告)日：2017-09-19
申请号：US14843803
申请日：2015-09-02
发明人： Gregory J. Wilson , Paul R. McHugh
CPC分类号： C25D17/12 , C25D17/001 , C25D17/002 , C25D17/007
摘要： An electroplating processor has a head including a wafer holder, with the head movable to position a wafer in the wafer holder into a vessel holding a first electrolyte and having one or more anodes. A thief electrode assembly may be positioned adjacent to a lower end of the vessel, or below the anode. A thief current channel extends from the thief electrode assembly to a virtual thief position adjacent to the wafer holder. A thief electrode in the thief electrode assembly is positioned within a second electrolyte which is separated from the first electrolyte by a membrane. Alternatively, two membranes may be used with an isolation solution between them. The processor avoids plating metal onto the thief electrode, even when processing redistribution layer and wafer level packaging wafers having high amp-minute electroplating characteristics.
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