公开(公告)号：US20210159335A1

公开(公告)日：2021-05-27

申请号：US17047438

申请日：2018-04-19

Applicant: NISSAN MOTOR CO., LTD. ,  RENAULT S.A.S.

Inventor： Wei NI ,  Toshiharu MARUI ,  Ryota TANAKA ,  Tetsuya HAYASHI ,  Shigeharu YAMAGAMI ,  Keiichiro NUMAKURA ,  Keisuke TAKEMOTO ,  Yasuaki HAYAMI

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/66

Abstract: A semiconductor device includes: a substrate; a drift region disposed on a principal surface of the substrate; a first well region extending from a second principal surface of the drift region in a direction perpendicular to the second principal surface and having a bottom portion; a second well region being in contact with the bottom portion and disposed at a portion inside the substrate located below the bottom portion; and a source region extending in a perpendicular direction from a region of the second principal surface provided with the first well region, and reaching the second well region. In a direction parallel to the second principal surface and oriented from a source electrode to a drain electrode, a distance of the second well region in contact with a gate insulating film is shorter than a distance of the first well region in contact with the gate insulating film.