公开(公告)号：US20230253512A1

公开(公告)日：2023-08-10

申请号：US18301793

申请日：2023-04-17

Applicant: NISSAN MOTOR CO., LTD. ,  RENAULT S.A.S.

Inventor： Toshiharu MARUI ,  Tetsuya HAYASHI ,  Keiichiro NUMAKURA ,  Wei NI ,  Ryota TANAKA

IPC: H01L29/94 ,  H01L29/66

CPC classification number: H01L29/945 ,  H01L29/66181 ,  H01L28/91 ,  H01L25/074

Abstract: A method for manufacturing a semiconductor device includes forming a trench on a first main surface of a conductive semiconductor substrate. The method includes laminating conductive layers, each of which is a first or a second conductive layer, along a surface normal direction of a side surface of the trench, while forming dielectric layers between a conductive layer closest to the side surface of the trench and the side surface of the trench, and between the corresponding conductive layers; and removing the first conductive layer and the dielectric layer, which are formed on a bottom portion of the trench, to electrically connect the second conductive layer to the semiconductor substrate at the bottom portion of the trench. After a portion of the first main surface, the portion being outside of the trench, is covered with an insulating protective film, the first conductive layer and the dielectric layer are removed.

公开(公告)号：US20210313466A1

公开(公告)日：2021-10-07

申请号：US17262001

申请日：2018-07-27

Applicant: NISSAN MOTOR CO., LTD. ,  RENAULT S.A.S.

Inventor： Toshiharu MARUI ,  Tetsuya HAYASHI ,  Keiichiro NUMAKURA ,  Wei NI ,  Ryota TANAKA ,  Keisuke TAKEMOTO

IPC: H01L29/78 ,  H01L29/16 ,  H01L29/66 ,  H01L29/10 ,  H01L29/423 ,  H01L29/08

Abstract: A semiconductor device includes: a substrate; a semiconductor layer disposed on a main surface of the substrate; and a first main electrode and a second main electrode, which are disposed on the substrate separately from each other with the semiconductor layer sandwiched therebetween and are individually end portions of a current path of a main current flowing in an on-state. The semiconductor layer includes: a first conductivity-type drift region through which a main current flows; a second conductivity-type column region that is disposed inside the drift region and extends in parallel to a current path; and an electric field relaxation region that is disposed in at least a part between the drift region and the column region and is either a low-concentration region in which an impurity concentration is lower than in the same conductivity-type adjacent region or a non-doped region.

公开(公告)号：US20210296308A1

公开(公告)日：2021-09-23

申请号：US17263617

申请日：2018-08-01

Applicant: NISSAN MOTOR CO., LTD. ,  RENAULT S.A.S.

Inventor： Toshiharu MARUI ,  Tetsuya HAYASHI ,  Keiichiro NUMAKURA ,  Wei NI ,  Ryota TANAKA

IPC: H01L27/06 ,  H01L49/02 ,  H01L21/8234

Abstract: A semiconductor device includes: a conductive semiconductor substrate in which a trench is formed on the first main surface; a plurality of conductive layers, each of which is either a first conductive layer or a second conductive layer, which are laminated on one another along a surface normal direction of a side surface of the trench; and dielectric layers arranged between a conductive layer closest to the side surface of the trench among the plurality of conductive layers and the side surface of the trench, and between the plurality of corresponding conductive layers. The first conductive layer is electrically insulated from the semiconductor substrate, and the semiconductor substrate that electrically connects to the second conductive layer inside the trench electrically connects to the second electrode.

公开(公告)号：US20220085157A1

公开(公告)日：2022-03-17

申请号：US17423966

申请日：2019-01-21

Applicant: NISSAN MOTOR CO., LTD. ,  RENAULT s.a.s.

Inventor： Toshiharu MARUI ,  Tetsuya HAYASHI ,  Keiichiro NUMAKURA ,  Wei NI ,  Ryota TANAKA ,  Keisuke TAKEMOTO

IPC: H01L29/06 ,  H01L29/16 ,  H01L21/04 ,  H01L21/76 ,  H01L21/761

Abstract: A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.

公开(公告)号：US20240055475A1

公开(公告)日：2024-02-15

申请号：US18039610

申请日：2020-12-01

Applicant: NISSAN MOTOR CO., LTD. ,  RENAULT s.a.s.

Inventor： Wei NI ,  Tetsuya HAYASHI ,  Keiichiro NUMAKURA ,  Toshiharu MARUI ,  Ryouta TANAKA ,  Yuichi IWASAKI

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/423 ,  H01L29/16 ,  H01L29/66

CPC classification number: H01L29/0638 ,  H01L29/7835 ,  H01L29/4236 ,  H01L29/1608 ,  H01L29/66704

Abstract: A semiconductor device includes: a drift region that is arranged on a main surface of a substrate, and has a higher impurity concentration than the substrate; a first well region that is connected to the drift region; and a second well region that is arranged adjacent to the first well region and faces the drift region. The second well region has a higher impurity concentration than the first well region. A distance between the source region that faces the drift region via the first well region and the drift region is greater than a distance between the second well region and the drift region, in a direction parallel to the main surface of the substrate. A depletion layer extending from the second well region reaches the drift region.

公开(公告)号：US20230074093A1

公开(公告)日：2023-03-09

申请号：US17944853

申请日：2022-09-14

Applicant: NISSAN MOTOR CO., LTD. ,  RENAULT s.a.s.

Inventor： Toshiharu MARUI ,  Tetsuya HAYASHI ,  Keiichiro NUMAKURA ,  Wei NI ,  Ryota TANAKA ,  Keisuke TAKEMOTO

IPC: H01L29/06 ,  H01L21/04 ,  H01L21/76 ,  H01L21/761 ,  H01L29/16

Abstract: A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.

公开(公告)号：US20230013819A1

公开(公告)日：2023-01-19

申请号：US17944844

申请日：2022-09-14

Applicant: NISSAN MOTOR CO., LTD. ,  RENAULT s.a.s.

Inventor： Toshiharu MARUI ,  Tetsuya HAYASHI ,  Keiichiro NUMAKURA ,  Wei NI ,  Ryota TANAKA ,  Keisuke TAKEMOTO

IPC: H01L29/06 ,  H01L21/04 ,  H01L21/76 ,  H01L21/761 ,  H01L29/16

Abstract: A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.

公开(公告)号：US20210367070A1

公开(公告)日：2021-11-25

申请号：US17040631

申请日：2018-03-26

Applicant: NISSAN MOTOR CO., LTD. ,  RENAULT S.A.S.

Inventor： Toshiharu MARUI ,  Tetsuya HAYASHI ,  Keiichiro NUMAKURA ,  Wei NI ,  Ryota TANAKA ,  Keisuke TAKEMOTO

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/06

Abstract: A semiconductor device includes: a substrate having a groove formed on a main surface; a drift region of a first conductivity type, the drift region having a portion disposed at a bottom part; a well region of a second conductivity type, the well region being disposed in one sidewall to be connected to the drift region; a first semiconductor region of the first conductivity type, the first semiconductor region being disposed on a surface of the well region in the sidewall to be away from the drift region; a second semiconductor region of the first conductivity type, the second semiconductor region being disposed to be opposed to the well region via the drift region; and a gate electrode opposed to the well region, the gate electrode being disposed in a gate trench that has an opening extending over the upper surfaces of the well region and the first semiconductor region.

公开(公告)号：US20210159335A1

公开(公告)日：2021-05-27

申请号：US17047438

申请日：2018-04-19

Applicant: NISSAN MOTOR CO., LTD. ,  RENAULT S.A.S.

Inventor： Wei NI ,  Toshiharu MARUI ,  Ryota TANAKA ,  Tetsuya HAYASHI ,  Shigeharu YAMAGAMI ,  Keiichiro NUMAKURA ,  Keisuke TAKEMOTO ,  Yasuaki HAYAMI

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/66

Abstract: A semiconductor device includes: a substrate; a drift region disposed on a principal surface of the substrate; a first well region extending from a second principal surface of the drift region in a direction perpendicular to the second principal surface and having a bottom portion; a second well region being in contact with the bottom portion and disposed at a portion inside the substrate located below the bottom portion; and a source region extending in a perpendicular direction from a region of the second principal surface provided with the first well region, and reaching the second well region. In a direction parallel to the second principal surface and oriented from a source electrode to a drain electrode, a distance of the second well region in contact with a gate insulating film is shorter than a distance of the first well region in contact with the gate insulating film.

公开(公告)号：US20160181371A1

公开(公告)日：2016-06-23

申请号：US14905648

申请日：2014-06-03

Applicant: NISSAN MOTOR CO., LTD.

Inventor： Wei NI ,  Tetsuya HAYASHI ,  Toshiharu MARUI ,  Yuji SAITO ,  Kenta EMORI

IPC: H01L29/10 ,  H01L29/66 ,  H01L21/04 ,  H01L29/08 ,  H01L21/306 ,  H01L21/265 ,  H01L29/78 ,  H01L29/16

CPC classification number: H01L29/1095 ,  H01L21/047 ,  H01L21/0475 ,  H01L21/26586 ,  H01L21/30604 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0865 ,  H01L29/0882 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/66696 ,  H01L29/66704 ,  H01L29/7816 ,  H01L29/7825 ,  H01L29/7835

Abstract: The semiconductor device includes: a substrate, an n-type drift region formed on a main surface of the substrate; a p-type well region, an n-type drain region and an n-type source region each formed in the drift region to extend from a second main surface of the drift region opposite to the first main surface of the drift region in contact with the substrate in a direction perpendicular to the second main surface; a gate groove extending from the second main surface in the perpendicular direction and penetrating the source region and the well region in a direction parallel to the first main surface of the substrate; and a gate electrode formed on a surface of the gate groove with a gate insulating film interposed therebetween, wherein the drift region has a higher impurity concentration than the substrate, and the well region extends to the inside of the substrate.

Abstract translation: 半导体器件包括：衬底，形成在衬底的主表面上的n型漂移区; p型阱区，n型漏区和n型源极区，分别形成在漂移区中，从与漂移区的第一主表面相反的第二主表面延伸，与漂移区的第一主表面相接触 所述基板在垂直于所述第二主表面的方向上; 栅极沟槽，其从垂直方向从第二主表面延伸并沿平行于衬底的第一主表面的方向穿透源极区域和阱区域; 以及在所述栅极沟槽的表面上形成有栅极绝缘膜的栅电极，其中所述漂移区域具有比所述衬底更高的杂质浓度，并且所述阱区域延伸到所述衬底的内部。