公开(公告)号：US20220038014A1

公开(公告)日：2022-02-03

申请号：US17275314

申请日：2018-09-13

Applicant: NISSAN MOTOR CO., LTD. ,  RENAULT S.A.S.

Inventor： Yusuke ZUSHI ,  Yosuke TOMITA ,  Yuji SAITO ,  Keisuke TAKEMOTO ,  Shigeharu YAMAGAMI

IPC: H02M3/335 ,  H02M1/00 ,  H02M3/00

Abstract: The present disclosure includes a conversion circuit (10) having a switching element and converting DC voltage into AC voltage by switching operation of the switching element, an isolation transformer (3) for which an input side is connected to the conversion circuit (10), a rectifier circuit (4) connected to an outside of the isolation transformer (3), a resonance circuit connected to the output side of the isolation transformer (3), and a control circuit (100) for controlling the switching element, wherein the control circuit (100) turning on the switching element in a period when current flowing through resonance circuit flows from a low potential side terminal to a high potential side terminal of the switching element via the isolation transformer (3).

公开(公告)号：US20220085157A1

公开(公告)日：2022-03-17

申请号：US17423966

申请日：2019-01-21

Applicant: NISSAN MOTOR CO., LTD. ,  RENAULT s.a.s.

Inventor： Toshiharu MARUI ,  Tetsuya HAYASHI ,  Keiichiro NUMAKURA ,  Wei NI ,  Ryota TANAKA ,  Keisuke TAKEMOTO

IPC: H01L29/06 ,  H01L29/16 ,  H01L21/04 ,  H01L21/76 ,  H01L21/761

Abstract: A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.

公开(公告)号：US20210313466A1

公开(公告)日：2021-10-07

申请号：US17262001

申请日：2018-07-27

Applicant: NISSAN MOTOR CO., LTD. ,  RENAULT S.A.S.

Inventor： Toshiharu MARUI ,  Tetsuya HAYASHI ,  Keiichiro NUMAKURA ,  Wei NI ,  Ryota TANAKA ,  Keisuke TAKEMOTO

IPC: H01L29/78 ,  H01L29/16 ,  H01L29/66 ,  H01L29/10 ,  H01L29/423 ,  H01L29/08

Abstract: A semiconductor device includes: a substrate; a semiconductor layer disposed on a main surface of the substrate; and a first main electrode and a second main electrode, which are disposed on the substrate separately from each other with the semiconductor layer sandwiched therebetween and are individually end portions of a current path of a main current flowing in an on-state. The semiconductor layer includes: a first conductivity-type drift region through which a main current flows; a second conductivity-type column region that is disposed inside the drift region and extends in parallel to a current path; and an electric field relaxation region that is disposed in at least a part between the drift region and the column region and is either a low-concentration region in which an impurity concentration is lower than in the same conductivity-type adjacent region or a non-doped region.

公开(公告)号：US20230074093A1

公开(公告)日：2023-03-09

申请号：US17944853

申请日：2022-09-14

Applicant: NISSAN MOTOR CO., LTD. ,  RENAULT s.a.s.

Inventor： Toshiharu MARUI ,  Tetsuya HAYASHI ,  Keiichiro NUMAKURA ,  Wei NI ,  Ryota TANAKA ,  Keisuke TAKEMOTO

IPC: H01L29/06 ,  H01L21/04 ,  H01L21/76 ,  H01L21/761 ,  H01L29/16

Abstract: A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.

公开(公告)号：US20230013819A1

公开(公告)日：2023-01-19

申请号：US17944844

申请日：2022-09-14

Applicant: NISSAN MOTOR CO., LTD. ,  RENAULT s.a.s.

Inventor： Toshiharu MARUI ,  Tetsuya HAYASHI ,  Keiichiro NUMAKURA ,  Wei NI ,  Ryota TANAKA ,  Keisuke TAKEMOTO

IPC: H01L29/06 ,  H01L21/04 ,  H01L21/76 ,  H01L21/761 ,  H01L29/16

Abstract: A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.

公开(公告)号：US20220001750A1

公开(公告)日：2022-01-06

申请号：US17291095

申请日：2018-11-05

Applicant: NISSAN MOTOR CO., LTD. ,  RENAULT S.A.S.

Inventor： Yusuke ZUSHI ,  Shigeharu YAMAGAMI ,  Yuji SAITO ,  Yosuke TOMITA ,  Keisuke TAKEMOTO

IPC: B60L8/00 ,  B60L58/12

Abstract: The present invention is related to a control method for controlling a power converter including a first power conversion circuit 11 and a second power conversion circuit 12 by using a control circuit 13. The first power conversion circuit 11 is connected to a solar cell module 1 and a capacitor 2, converts output power of the solar cell module 1, and outputs the converted power to the capacitor 2, the second power conversion circuit 12 is connected to the capacitor 2, and converts a voltage at a connection terminal connected to the capacitor 2. The control method comprises step of controlling operation of the second power conversion circuit 12 based on the output voltage of the solar cell module 1, to use output power of the second power conversion circuit 12 for charging the capacitor 2.

公开(公告)号：US20210367070A1

公开(公告)日：2021-11-25

申请号：US17040631

申请日：2018-03-26

Applicant: NISSAN MOTOR CO., LTD. ,  RENAULT S.A.S.

Inventor： Toshiharu MARUI ,  Tetsuya HAYASHI ,  Keiichiro NUMAKURA ,  Wei NI ,  Ryota TANAKA ,  Keisuke TAKEMOTO

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/06

Abstract: A semiconductor device includes: a substrate having a groove formed on a main surface; a drift region of a first conductivity type, the drift region having a portion disposed at a bottom part; a well region of a second conductivity type, the well region being disposed in one sidewall to be connected to the drift region; a first semiconductor region of the first conductivity type, the first semiconductor region being disposed on a surface of the well region in the sidewall to be away from the drift region; a second semiconductor region of the first conductivity type, the second semiconductor region being disposed to be opposed to the well region via the drift region; and a gate electrode opposed to the well region, the gate electrode being disposed in a gate trench that has an opening extending over the upper surfaces of the well region and the first semiconductor region.

公开(公告)号：US20210159335A1

公开(公告)日：2021-05-27

申请号：US17047438

申请日：2018-04-19

Applicant: NISSAN MOTOR CO., LTD. ,  RENAULT S.A.S.

Inventor： Wei NI ,  Toshiharu MARUI ,  Ryota TANAKA ,  Tetsuya HAYASHI ,  Shigeharu YAMAGAMI ,  Keiichiro NUMAKURA ,  Keisuke TAKEMOTO ,  Yasuaki HAYAMI

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/66

Abstract: A semiconductor device includes: a substrate; a drift region disposed on a principal surface of the substrate; a first well region extending from a second principal surface of the drift region in a direction perpendicular to the second principal surface and having a bottom portion; a second well region being in contact with the bottom portion and disposed at a portion inside the substrate located below the bottom portion; and a source region extending in a perpendicular direction from a region of the second principal surface provided with the first well region, and reaching the second well region. In a direction parallel to the second principal surface and oriented from a source electrode to a drain electrode, a distance of the second well region in contact with a gate insulating film is shorter than a distance of the first well region in contact with the gate insulating film.

公开(公告)号：US20200020775A1

公开(公告)日：2020-01-16

申请号：US16485496

申请日：2017-02-14

Applicant: NISSAN MOTOR CO., LTD.

Inventor： Wei NI ,  Tetsuya HAYASHI ,  Ryota TANAKA ,  Keisuke TAKEMOTO ,  Yasuaki HAYAMI

IPC: H01L29/08 ,  H01L29/78 ,  H01L29/66

Abstract: There are included a first conductivity-type first drift region formed on a first main surface of a substrate, and a first conductivity-type second drift region formed on the first main surface of the substrate, the second drift region formed to be reached to a deeper position of the substrate than a position of the first drift region. There are further included a second conductivity-type well region in contact with the second drift region, a first conductivity-type source region formed to extend in a direction perpendicular to a surface of the well region, and a first conductivity-type drain region separated from the well region, the drain region formed to extend in a direction perpendicular to a surface of the first drift region. Since a flow path of electrons after passing through a channel can be widened, a resistance can be reduced.

公开(公告)号：US20210305524A1

公开(公告)日：2021-09-30

申请号：US16325041

申请日：2016-08-31

Applicant: Nissan Motor Co., Ltd.

Inventor： Yuji SAITO ,  Tetsuya HAYASHI ,  Shigeharu YAMAGAMI ,  Yusuke ZUSHI ,  Yosuke TOMITA ,  Keisuke TAKEMOTO

IPC: H01L51/42 ,  H01L31/04 ,  H01L31/0304

Abstract: A photovoltaic device includes an organic semiconductor and an inorganic semiconductor. The organic semiconductor includes a photoactive region that generates excitons. The inorganic semiconductor has piezoelectricity and includes a dissociation region for dissociating carriers included in the excitons. A relationship of energy levels between the photoactive region and the dissociation region satisfies at least one equation ELUMO>EC or equation EHOMO