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139 条记录 (耗时 0.038 秒)

    Magnetic recording head with clad coil
    11.
    发明授权
    Magnetic recording head with clad coil 有权
    磁记录头与包线线圈

    公开(公告)号：US07310202B2

    公开(公告)日：2007-12-18

    申请号：US10809245

    申请日：2004-03-25

    申请人： Mark T. Kief ,  Nurul Amin ,  Song S. Xue

    发明人： Mark T. Kief ,  Nurul Amin ,  Song S. Xue

    IPC分类号： G11B5/17

    CPC分类号： G11B5/1272 ,  G11B5/17

    摘要： A magnetic write head for recording data having reduced erasure caused by a magnetic field is disclosed. The magnetic write head include a main pole and a conductive coil positioned adjacent the main pole. The conductive coil is insulated from the main pole. The magnetic write head includes means for directing a magnetic field produced by the conductive coil toward the main pole.

    摘要翻译： 公开了一种用于记录由磁场引起的擦除减少的数据的磁写头。 磁写头包括主极和邻近主极定位的导电线圈。 导电线圈与主极绝缘。 磁写头包括用于将由导电线圈产生的磁场引向主极的装置。

    MEMS SHOCK SENSORS
    14.
    发明申请
    MEMS SHOCK SENSORS 有权
    MEMS触发传感器

    公开(公告)号：US20080202258A1

    公开(公告)日：2008-08-28

    申请号：US11677762

    申请日：2007-02-22

    申请人： Nurul Amin ,  Song S. Xue ,  Patrick J. Ryan

    发明人： Nurul Amin ,  Song S. Xue ,  Patrick J. Ryan

    IPC分类号： G01L1/16 ,  G01L1/00

    CPC分类号： G01P15/0891 ,  G01P15/06 ,  H01H1/0036 ,  H01H9/168 ,  H01H35/14 ,  H01H35/146 ,  H01H2001/0042

    摘要： A shock sensor comprises a substrate and at least one flexure coupled to the substrate and configured to deflect upon an application of force to the shock sensor sufficient to deflect the flexure. Deflection of the at least one flexure produces a detectable change in an electrical property of the shock sensor. Examples of detectable changes in an electrical property of the shock sensor include an open circuit condition, a closed circuit condition, and a variation in voltage of a piezo-electric detector. In some embodiments, the change in the electrical property of the shock sensor may be remotely read by interrogation of a radio frequency identification transponder positioned on the substrate using a remote radio frequency identification transceiver. The disclosure also relates to a shock sensing system and method of shock detection.

    摘要翻译： 冲击传感器包括衬底和耦合到衬底的至少一个挠曲件，并且构造成在对冲击传感器施加足以偏转挠曲件的情况下偏转。 至少一个弯曲部的偏转产生震动传感器的电性能的可检测变化。 冲击传感器的电性能的可检测变化的示例包括开路状态，闭路状态和压电检测器的电压变化。 在一些实施例中，可以通过使用远程射频识别收发器询问位于衬底上的射频识别应答器来远程读取冲击传感器的电气特性的变化。 本公开还涉及一种冲击检测系统和冲击检测方法。

    MEMS shock sensors
    15.
    发明授权
    MEMS shock sensors 有权
    MEMS冲击传感器

    公开(公告)号：US07810373B2

    公开(公告)日：2010-10-12

    申请号：US11677762

    申请日：2007-02-22

    申请人： Nurul Amin ,  Song S. Xue ,  Patrick J. Ryan

    发明人： Nurul Amin ,  Song S. Xue ,  Patrick J. Ryan

    IPC分类号： G01P15/00

    CPC分类号： G01P15/0891 ,  G01P15/06 ,  H01H1/0036 ,  H01H9/168 ,  H01H35/14 ,  H01H35/146 ,  H01H2001/0042

    摘要： A shock sensor comprises a substrate and at least one flexure coupled to the substrate and configured to deflect upon an application of force to the shock sensor sufficient to deflect the flexure. Deflection of the at least one flexure produces a detectable change in an electrical property of the shock sensor. Examples of detectable changes in an electrical property of the shock sensor include an open circuit condition, a closed circuit condition, and a variation in voltage of a piezo-electric detector. In some embodiments, the change in the electrical property of the shock sensor may be remotely read by interrogation of a radio frequency identification transponder positioned on the substrate using a remote radio frequency identification transceiver. The disclosure also relates to a shock sensing system and method of shock detection.

    摘要翻译： 冲击传感器包括衬底和耦合到衬底的至少一个挠曲件，并且构造成在对冲击传感器施加足以偏转挠曲件的情况下偏转。 至少一个弯曲部的偏转产生震动传感器的电性能的可检测变化。 冲击传感器的电性能的可检测变化的示例包括开路状态，闭路状态和压电检测器的电压变化。 在一些实施例中，可以通过使用远程射频识别收发器询问位于衬底上的射频识别应答器来远程读取冲击传感器的电气特性的变化。 本公开还涉及一种冲击检测系统和冲击检测方法。

    Apparatus and method for controlling remnant magnetization in a magnetic recording head
    16.
    发明授权
    Apparatus and method for controlling remnant magnetization in a magnetic recording head 失效
    用于控制磁记录头中的残余磁化的装置和方法

    公开(公告)号：US07440213B2

    公开(公告)日：2008-10-21

    申请号：US11054456

    申请日：2005-02-09

    申请人： Nurul Amin ,  Song S. Xue ,  Patrick J. Ryan

    发明人： Nurul Amin ,  Song S. Xue ,  Patrick J. Ryan

    IPC分类号： G11B27/36 ,  G11B5/03 ,  G11B5/17

    CPC分类号： G11B5/3113 ,  G11B5/1278

    摘要： The present invention provides a magnetic writer. The magnetic writer comprises a write circuit, a write pole, a first write coil for inducing a first magnetic field in the write pole by a first current provided by the write circuit, and a second write coil for inducing a second magnetic field in the write pole by a second current provided by the write circuit. The write circuit provides a first current through the first coil and a second current through the second coil. The write circuit controls the direction of the first current and the second current so that, during writing, the first magnetic field and the second magnetic field have components perpendicular to the air bearing surface that are in the same direction. When not writing, the first magnetic field and second magnetic field have components perpendicular to the air bearing surface in opposite directions.

    摘要翻译： 本发明提供一种磁性写入器。 磁性写入器包括写入电路，写入极，用于通过由写入电路提供的第一电流在写入极中引起第一磁场的第一写入线圈和用于在写入中引起第二磁场的第二写入线圈 由写入电路提供的第二电流。 写入电路提供通过第一线圈的第一电流和通过第二线圈的第二电流。 写入电路控制第一电流和第二电流的方向，使得在写入期间，第一磁场和第二磁场具有垂直于空气轴承表面的分量处于相同方向的分量。 当不写时，第一磁场和第二磁场具有相反方向垂直于空气轴承表面的分量。

    Flux programmed multi-bit magnetic memory
    18.
    发明授权
    Flux programmed multi-bit magnetic memory 有权
    磁通编程多位磁记忆体

    公开(公告)号：US08203870B2

    公开(公告)日：2012-06-19

    申请号：US12953205

    申请日：2010-11-23

    申请人： Nurul Amin ,  Dimitar V. Dimitrov ,  Haiwen Xi ,  Song S. Xue

    发明人： Nurul Amin ,  Dimitar V. Dimitrov ,  Haiwen Xi ,  Song S. Xue

    IPC分类号： G11C11/00

    CPC分类号： G11C11/5607 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/222 ,  Y10S977/935

    摘要： An apparatus and associated method for a non-volatile memory cell, such as a multi-bit magnetic random access memory cell. In accordance with various embodiments, a first magnetic tunnel junction (MTJ) is adjacent to a second MTJ having a magnetic filter. The first MTJ is programmed to a first logical state with a first magnetic flux while the magnetic filter absorbs the first magnetic flux to prevent the second MTJ from being programmed.

    摘要翻译： 一种用于非易失性存储单元（诸如多位磁随机存取存储单元）的装置和相关方法。 根据各种实施例，第一磁性隧道结（MTJ）与具有磁性过滤器的第二MTJ相邻。 第一MTJ被编程为具有第一磁通量的第一逻辑状态，同时磁性滤波器吸收第一磁通量以防止第二MTJ被编程。

    FLUX PROGRAMMED MULTI-BIT MAGNETIC MEMORY
    19.
    发明申请
    FLUX PROGRAMMED MULTI-BIT MAGNETIC MEMORY 有权
    FLUX编程多位磁记忆

    公开(公告)号：US20120127786A1

    公开(公告)日：2012-05-24

    申请号：US12953205

    申请日：2010-11-23

    申请人： Nurul Amin ,  Dimitar V. Dimitrov ,  Haiwen Xi ,  Song S. Xue

    发明人： Nurul Amin ,  Dimitar V. Dimitrov ,  Haiwen Xi ,  Song S. Xue

    IPC分类号： G11C11/14 ,  H01L29/82

    CPC分类号： G11C11/5607 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/222 ,  Y10S977/935

    摘要： An apparatus and associated method for a non-volatile memory cell, such as a multi-bit magnetic random access memory cell. In accordance with various embodiments, a first magnetic tunnel junction (MTJ) is adjacent to a second MTJ having a magnetic filter. The first MTJ is programmed to a first logical state with a first magnetic flux while the magnetic filter absorbs the first magnetic flux to prevent the second MTJ from being programmed.

    摘要翻译： 一种用于非易失性存储单元（诸如多位磁随机存取存储单元）的装置和相关方法。 根据各种实施例，第一磁性隧道结（MTJ）与具有磁性过滤器的第二MTJ相邻。 第一MTJ被编程为具有第一磁通量的第一逻辑状态，同时磁性滤波器吸收第一磁通量以防止第二MTJ被编程。

    Magnetic storage element responsive to spin polarized current
    20.
    发明授权
    Magnetic storage element responsive to spin polarized current 有权
    响应于自旋极化电流的磁存储元件

    公开(公告)号：US08243503B2

    公开(公告)日：2012-08-14

    申请号：US12958106

    申请日：2010-12-01

    申请人： Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Song S. Xue ,  Sining Mao

    发明人： Kaizhong Gao ,  Haiwen Xi ,  Yiming Shi ,  Song S. Xue ,  Sining Mao

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673

    摘要： The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.

    摘要翻译： 本发明涉及包括具有第一磁化方向的第一磁化的第一参考层和具有基本上垂直于第一磁化方向的第二磁化方向的第二磁化的第二参考层的存储单元。 存储层设置在第一参考层和第二参考层之间，并且当存储单元处于第一数据状态时，具有从第一磁化方向大约45°的第三磁化方向和从第二磁化方向开始的大约135°的存储层， 当存储单元处于第二数据状态时与第三磁化方向相反的第四磁化方向。