摘要:
Apparatus and method for managing an array of multi-level cell (MLC) memory cells. In accordance with various embodiments, a non-sequential encoding scheme is selected that assigns a different multi-bit logical value to each of a plurality of available physical states of a selected MLC memory cell in relation to write effort associated with each of said plurality of physical states. Data are thereafter written to the selected MLC memory cell in relation to the selected non-sequential encoding scheme. In some embodiments, the MLC memory cell comprises a spin-torque transfer random access memory (STRAM) memory cell. In other embodiments, the MLC memory cell comprises an MLC flash memory cell.
摘要:
A device for administering a product (e.g. a medicinal or therapeutic substance), the device including a receptacle for the product or constituents of the product and a casing, wherein the receptacle and casing are engaged, and an outer sleeve, wherein the casing can be moved relative to the receptacle into the outer sleeve.
摘要:
A multilayered magnetoresistive device includes a specular layer positioned on at least one sidewall and a copper layer positioned between the specular layer and the sidewall.
摘要:
A reticle sorter and a semiconductor fabrication facility employing one or more reticle sorters is provided. The reticle sorter(s) generally lies between a reticle storage system and a group of one or more photolithography exposure tools (e.g., steppers) and is configured for sorting reticles in one or more cassettes. The use of the reticle sorter provides sorting functionality apart from the reticle storage system and typically closer to the group of photolithography steppers with which it is associated. This can, for example, significantly increase the throughput of semiconductor wafers through the associated photolithography exposure tools as well as in the semiconductor fabrication plant as a whole.
摘要:
Systems and methods for managing automated material handling systems, such as semiconductor fabrication facilities, using material item (e.g., wafer lot) attributes and cassette attributes are provided. A semiconductor fabrication facility typically includes multiple wafer lots and multiple cassettes for storing the wafer lots. A system and method, in one embodiment of the invention, includes setting one or more lot attributes for each wafer lot, setting one or more cassette attributes for each cassette, and selecting a particular cassette for holding a particular wafer lot based on the one or more wafer lot attributes of the particular wafer lot and the one or more cassette attributes of the particular cassette. The wafer lot and cassette attributes may, for example, include an attribute identifying a position in a fabrication sequence and one or more attributes indicative of one or more contaminants. By selecting cassettes in this manner, wafer lots and cassettes may, for example, be classified or logically zoned.
摘要:
A magneto-resistive sensor has a magneto-resistive element with an active area with an electrical resistance sensitive to changes in magnetic flux. Two hard magnets on opposing sides of the magneto-resistive element magnetically bias the magneto-resistive element. Each hard magnet includes a seed layer of a soft magnetic, electrically conductive material between two magnet layers of a hard magnetic, electrically conductive material laminated longitudinally together such that the seed layer and the magnet layers exhibit unified magnetic properties. The seed layer is preferably an amorphous material such as nitrided sendust. The laminated structure allows for a thicker magnet structure with low electrical resistance but without degradation of magnetic properties due to the increased thickness.
摘要:
An improved magnetoresistive read sensor (100) and a method of fabricating magnetoresistive read sensor (100) that eliminates film removal is disclosed. The magnetoresistive sensor (100) is formed by positioning a first mask (128) on a gap layer (104) split into three regions due to subsequent layers. A first mask (128) is positioned on the central region of the gap layer (104) and a first hard-biasing material (106) is deposited onto the outside regions of the gap layer (104). The first mask (128) is removed and a magnetoresistive element (116) is deposited onto the outside regions of the first hard-biasing material (106) and the central region of gap layer (104), thereby forming an active region (122), a first passive region (124) and a second passive region (126) of the magnetoresistive sensor (100). A spacer layer (118) is deposited onto the magnetoresistive element (116) in all three regions and a soft adjacent layer (120) is deposited onto the spacer layer (118) in all three regions. A second mask (134) is positioned over the active region (122) of the sensor and a second hard-biasing material (110) is deposited onto the soft adjacent layer (120) in the first passive region (124) and the second passive region (126). The second mask (134) is removed and contacts (112, 114) are positioned onto the second hard-biasing material (110).
摘要:
An improved magnetoresistive read sensor (100) and a method of fabricating magnetoresistive read sensor (100) that eliminates film removal is disclosed. The magnetoresistive sensor (100) is formed by positioning a first mask (128) on a gap layer (104) split into three regions due to subsequent layers. A first mask (128) is positioned on the central region of the gap layer (104) and a first hard-biasing material (106) is deposited onto the outside regions of the gap layer (104). The first mask (128) is removed and a magnetoresistive element (116) is deposited onto the outside regions of the first hard-biasing material (106) and the central region of gap layer (104), thereby forming an active region (122), a first passive region (124) and a second passive region (126) of the magnetoresistive sensor (100). A spacer layer (118) is deposited onto the magnetoresistive element (116) in all three regions and a soft adjacent layer (120) is deposited onto the spacer layer (118) in all three regions. A second mask (134) is positioned over the active region (122) of the sensor and a second hard-biasing material (110) is deposited onto the soft adjacent layer (120) in the first passive region (124) and the second passive region (126). The second mask (134) is removed and contacts (112, 114) are positioned onto the second hard- biasing material (110).
摘要:
A microactuator for radially positioning a transducing head over a selected radial track of a rotatable disc in a disc drive system having a flexure to support a slider carrying the transducing head includes a stator operatively attached to the flexure. First and second pole pieces are substantially parallel to and spaced from each other, each having first and second ends. A via magnetically connects the first and second pole pieces. The first and second pole pieces are shaped so that a first gap between the first end of the first pole piece and the first end of the second pole piece is smaller than a second gap between the second end of the first pole piece and the second end of the second pole piece. A plurality of coils are wrapped around the stator. A rotor confronts the second end of the first pole piece and the second end of the second pole piece. The rotor is operatively attached to the slider and is movable with respect to the stator in response to an electrical current applied through the coils, so that movement of the rotor alters a radial position of the transducing head with respect to the flexure.
摘要:
An MR sensor includes an MR layer and permanent magnets defining an active area on the MR layer. A bi-layer test structure is fabricated with a permanent magnet layer deposited on a substrate and an MR layer deposited on the permanent magnet layer. If desired, a SAL may be deposited prior to deposition of the permanent magnet layer. A DC magnetic field is applied to the bi-layer test structure, and the strength of the DC magnetic field is varied. During application of the DC magnetic field, the magnetic response of the bi-layer test structure is measured to determine a hysteresis loop of the bi-layer structure. The exchange coupling between the permanent magnet layer and the MR layer is characterized by a point of inflection identified on the measured hysteresis loop.