Image sensor with pixel units having interleaved photodiodes
    11.
    发明授权
    Image sensor with pixel units having interleaved photodiodes 有权
    图像传感器,具有交错光电二极管的像素单元

    公开(公告)号:US09294693B1

    公开(公告)日:2016-03-22

    申请号:US14523377

    申请日:2014-10-24

    Inventor: Xianmin Yi

    Abstract: An image sensor includes a plurality of photodiodes arranged into an array of rows and columns. The photodiodes are grouped into pixel units, where each pixel unit includes at least four photodiodes and shared pixel unit circuitry coupled to each of the four photodiodes. In one aspect the shared pixel unit circuitry may include a shared source follower transistor. In another aspect the shared pixel unit circuitry includes a shared reset transistor. Two of the photodiodes of the pixel unit are in a first column of the array and another two of the photodiodes are in a second column of the array. One of the photodiodes in the second column is in a row that is between rows of the two photodiodes in the first column.

    Abstract translation: 图像传感器包括布置成行和列阵列的多个光电二极管。 光电二极管被分组成像素单元,其中每个像素单元包括耦合到四个光电二极管中的每一个的至少四个光电二极管和共享像素单元电路。 在一个方面,共享像素单元电路可以包括共享源极跟随器晶体管。 在另一方面,共享像素单元电路包括共享复位晶体管。 像素单元的两个光电二极管位于阵列的第一列中,另外两个光电二极管位于阵列的第二列中。 第二列中的一个光电二极管位于第一列中的两个光电二极管的行之间的行中。

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