Abstract:
An image sensor includes a plurality of photodiodes arranged into an array of rows and columns. The photodiodes are grouped into pixel units, where each pixel unit includes at least four photodiodes and shared pixel unit circuitry coupled to each of the four photodiodes. In one aspect the shared pixel unit circuitry may include a shared source follower transistor. In another aspect the shared pixel unit circuitry includes a shared reset transistor. Two of the photodiodes of the pixel unit are in a first column of the array and another two of the photodiodes are in a second column of the array. One of the photodiodes in the second column is in a row that is between rows of the two photodiodes in the first column.