公开(公告)号：US20160155768A1

公开(公告)日：2016-06-02

申请号：US14557075

申请日：2014-12-01

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Xianmin Yi

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/3745

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14649 ,  H04N5/35572 ,  H04N5/37452 ,  H04N5/37455 ,  H04N5/378

Abstract: An image sensor pixel includes a photodiode, a first storage node, a second storage node, a first transfer storage gate, a second transfer storage gate, a floating diffusion, and an output gate. The photodiode is for generating image charge in response to image light. The first storage node, the second storage node, and the photodiode have a first doping polarity. The first transfer storage gate is coupled to transfer the image charge from the photodiode to the first storage node. The first transfer storage gate is disposed over a majority portion of the first storage node. The second transfer storage gate is coupled to transfer the image charge from the first storage node to the second storage node. The second transfer storage gate is disposed over a majority portion of the second storage node. The output gate transfers the image charge from the second storage node to the floating diffusion.

Abstract translation: 图像传感器像素包括光电二极管，第一存储节点，第二存储节点，第一传输存储门，第二传输存储门，浮动扩散和输出门。 光电二极管用于响应于图像光产生图像电荷。 第一存储节点，第二存储节点和光电二极管具有第一掺杂极性。 第一传输存储门被耦合以将图像电荷从光电二极管传送到第一存储节点。 第一传送存储门设置在第一存储节点的多数部分上。 第二传送存储门被耦合以将图像电荷从第一存储节点传送到第二存储节点。 第二传送存储门设置在第二存储节点的多数部分上。 输出门将图像电荷从第二存储节点传送到浮动扩散。

公开(公告)号：US09865642B2

公开(公告)日：2018-01-09

申请号：US14731707

申请日：2015-06-05

Applicant: OmniVision Technologies, Inc.

Inventor： Zhenhong Fu ,  Dajiang Yang ,  Xianmin Yi ,  Gang Chen ,  Sing-Chung Hu ,  Duli Mao

IPC: H01L27/00 ,  H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14649

Abstract: A front-side-interconnect (FSI) red-green-blue-infrared (RGB-IR) photosensor array has photosensors of a first type with a diffused N-type region in a P-type well, the P-type well diffused into a high resistivity semiconductor layer; photosensors of a second type, with a deeper diffused N-type region in a P-type well, the P-type well; and photosensors of a third type with a diffused N-type region diffused into the high resistivity semiconductor layer underlying all of the other types of photosensors. In embodiments, photosensors of a fourth type have a diffused N-type region in a P-type well, the N-type region deeper than the N-type region of photosensors of the first and second types.

公开(公告)号：US09472587B2

公开(公告)日：2016-10-18

申请号：US14606416

申请日：2015-01-27

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yuanwei Zheng ,  Xianmin Yi ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai

IPC: H01L27/14 ,  H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14612 ,  H01L27/14629 ,  H01L27/14643

Abstract: A storage transistor with a storage region is disposed in a semiconductor material. A gate electrode is disposed in a bottom side of an interlayer proximate to the storage region, and a dielectric layer is disposed between the storage region and the gate electrode. An optical isolation structure is disposed in the interlayer and the optical isolation structure extends from a top side of the interlayer to the gate electrode. The optical isolation structure is also adjoining a perimeter of the gate electrode and contacts the gate electrode. A capping layer is disposed proximate to the top side of the interlayer and the capping layer caps a volume encircled by the optical isolation structure.

Abstract translation: 具有存储区域的存储晶体管设置在半导体材料中。 栅电极设置在靠近存储区的中间层的底侧，并且介电层设置在存储区和栅电极之间。 光隔离结构设置在中间层中，光隔离结构从中间层的顶侧延伸到栅电极。 光学隔离结构也邻接栅电极的周边并与栅电极接触。 封盖层靠近中间层的顶侧设置，并且封盖层覆盖由光学隔离结构包围的体积。

公开(公告)号：US09461088B2

公开(公告)日：2016-10-04

申请号：US14557075

申请日：2014-12-01

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Xianmin Yi

IPC: H01L27/146 ,  H04N5/3745 ,  H04N5/378

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14649 ,  H04N5/35572 ,  H04N5/37452 ,  H04N5/37455 ,  H04N5/378

Abstract: An image sensor pixel includes a photodiode, a first storage node, a second storage node, a first transfer storage gate, a second transfer storage gate, a floating diffusion, and an output gate. The photodiode is for generating image charge in response to image light. The first storage node, the second storage node, and the photodiode have a first doping polarity. The first transfer storage gate is coupled to transfer the image charge from the photodiode to the first storage node. The first transfer storage gate is disposed over a majority portion of the first storage node. The second transfer storage gate is coupled to transfer the image charge from the first storage node to the second storage node. The second transfer storage gate is disposed over a majority portion of the second storage node. The output gate transfers the image charge from the second storage node to the floating diffusion.

Abstract translation: 图像传感器像素包括光电二极管，第一存储节点，第二存储节点，第一传输存储门，第二传输存储门，浮动扩散和输出门。 光电二极管用于响应于图像光产生图像电荷。 第一存储节点，第二存储节点和光电二极管具有第一掺杂极性。 第一传输存储门被耦合以将图像电荷从光电二极管传送到第一存储节点。 第一传送存储门设置在第一存储节点的多数部分上。 第二传送存储门被耦合以将图像电荷从第一存储节点传送到第二存储节点。 第二传送存储门设置在第二存储节点的多数部分上。 输出门将图像电荷从第二存储节点传送到浮动扩散。

公开(公告)号：US20160218132A1

公开(公告)日：2016-07-28

申请号：US14606416

申请日：2015-01-27

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yuanwei Zheng ,  Xianmin Yi ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14612 ,  H01L27/14629 ,  H01L27/14643

Abstract: A storage transistor with a storage region is disposed in a semiconductor material. A gate electrode is disposed in a bottom side of an interlayer proximate to the storage region, and a dielectric layer is disposed between the storage region and the gate electrode. An optical isolation structure is disposed in the interlayer and the optical isolation structure extends from a top side of the interlayer to the gate electrode. The optical isolation structure is also adjoining a perimeter of the gate electrode and contacts the gate electrode. A capping layer is disposed proximate to the top side of the interlayer and the capping layer caps a volume encircled by the optical isolation structure.

Abstract translation: 具有存储区域的存储晶体管设置在半导体材料中。 栅电极设置在靠近存储区的中间层的底侧，并且介电层设置在存储区和栅电极之间。 光隔离结构设置在中间层中，光隔离结构从中间层的顶侧延伸到栅电极。 光学隔离结构也邻接栅电极的周边并与栅电极接触。 封盖层靠近中间层的顶侧设置，并且封盖层覆盖由光学隔离结构包围的体积。

公开(公告)号：US11211421B2

公开(公告)日：2021-12-28

申请号：US16255194

申请日：2019-01-23

Applicant: OmniVision Technologies, Inc.

Inventor： Xianmin Yi ,  Jingming Yao ,  Philip Cizdziel ,  Eric Webster ,  Duli Mao ,  Zhiqiang Lin ,  Jens Landgraf ,  Keiji Mabuchi ,  Kevin Johnson ,  Sohei Manabe ,  Dyson H. Tai ,  Lindsay Grant ,  Boyd Fowler

IPC: G01S17/89 ,  H01L27/146 ,  H01L31/107 ,  H01L31/02 ,  H01L27/148 ,  G01S17/10

Abstract: A sensor includes a photodiode disposed in a semiconductor material to receive light and convert the light into charge, and a first floating diffusion coupled to the photodiode to receive the charge. A second floating diffusion is coupled to the photodiode to receive the charge, and a first transfer transistor is coupled to transfer the charge from the photodiode into the first floating diffusion. A second transfer transistor is coupled to transfer the charge from the photodiode into the second floating diffusion, and an inductor is coupled between a first gate terminal of the first transfer transistor and a second gate terminal of the second transfer transistor. The inductor, the first gate terminal, and the second gate terminal form a resonant circuit.

公开(公告)号：US20200235158A1

公开(公告)日：2020-07-23

申请号：US16255194

申请日：2019-01-23

Applicant: OmniVision Technologies, Inc.

Inventor： Xianmin Yi ,  Jingming Yao ,  Philip Cizdziel ,  Eric Webster ,  Duli Mao ,  Zhiqiang Lin ,  Jens Landgraf ,  Keiji Mabuchi ,  Kevin Johnson ,  Sohei Manabe ,  Dyson H. Tai ,  Lindsay Grant ,  Boyd Fowler

IPC: H01L27/146 ,  H01L31/107 ,  H01L31/02 ,  H01L27/148 ,  G01S17/10

Abstract: A sensor includes a photodiode disposed in a semiconductor material to receive light and convert the light into charge, and a first floating diffusion coupled to the photodiode to receive the charge. A second floating diffusion is coupled to the photodiode to receive the charge, and a first transfer transistor is coupled to transfer the charge from the photodiode into the first floating diffusion. A second transfer transistor is coupled to transfer the charge from the photodiode into the second floating diffusion, and an inductor is coupled between a first gate terminal of the first transfer transistor and a second gate terminal of the second transfer transistor. The inductor, the first gate terminal, and the second gate terminal form a resonant circuit.

公开(公告)号：US09843754B1

公开(公告)日：2017-12-12

申请号：US15181819

申请日：2016-06-14

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Xianmin Yi

IPC: H04N5/372 ,  H01L27/148 ,  H04N5/353 ,  H04N5/359 ,  H04N5/361

CPC classification number: H04N5/3597 ,  H01L27/14605 ,  H01L27/14612 ,  H01L27/14812 ,  H01L27/14831 ,  H04N5/361

Abstract: An image sensor pixel having a hybrid transfer storage gate-storage diode storage node is disclosed herein. An example image sensor includes a photodiode, a storage diode, a transfer gate, and a buried storage well. The photodiode, storage diode, and buried storage well are all disposed in a semiconductor material. The transfer storage gate may be disposed on a surface of the semiconductor material between the photodiode and the storage diode. Further, the buried storage well may be disposed under the storage diode and partially under the transfer storage gate. Additionally, a length of the transfer storage gate and a length of the storage diode may be equal, and the storage diode may passivate a surface of the semiconductor material between the transfer storage gate and an output gate.

公开(公告)号：US20170359545A1

公开(公告)日：2017-12-14

申请号：US15181819

申请日：2016-06-14

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Xianmin Yi

IPC: H04N5/372 ,  H01L27/148 ,  H04N5/361 ,  H04N5/359 ,  H04N5/353

CPC classification number: H04N5/3597 ,  H01L27/14605 ,  H01L27/14612 ,  H01L27/14812 ,  H01L27/14831 ,  H04N5/361

Abstract: An image sensor pixel having a hybrid transfer storage gate-storage diode storage node is disclosed herein. An example image sensor includes a photodiode, a storage diode, a transfer gate, and a buried storage well. The photodiode, storage diode, and buried storage well are all disposed in a semiconductor material. The transfer storage gate may be disposed on a surface of the semiconductor material between the photodiode and the storage diode. Further, the buried storage well may be disposed under the storage diode and partially under the transfer storage gate. Additionally, a length of the transfer storage gate and a length of the storage diode may be equal, and the storage diode may passivate a surface of the semiconductor material between the transfer storage gate and an output gate.

公开(公告)号：US20160358969A1

公开(公告)日：2016-12-08

申请号：US14731707

申请日：2015-06-05

Applicant: OmniVision Technologies, Inc.

Inventor： Zhenhong Fu ,  Dajiang Yang ,  Xianmin Yi ,  Gang Chen ,  Sing-Chung Hu ,  Duli Mao

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14649

Abstract: A front-side-interconnect (FSI) red-green-blue-infrared (RGB-IR) photosensor array has photosensors of a first type with a diffused N-type region in a P-type well, the P-type well diffused into a high resistivity semiconductor layer; photosensors of a second type, with a deeper diffused N-type region in a P-type well, the P-type well; and photosensors of a third type with a diffused N-type region diffused into the high resistivity semiconductor layer underlying all of the other types of photosensors. In embodiments, photosensors of a fourth type have a diffused N-type region in a P-type well, the N-type region deeper than the N-type region of photosensors of the first and second types.

Abstract translation: 前置互连（FSI）红 - 绿 - 蓝 - 红 - 红（RGB-IR）光电传感器阵列具有在P型阱中具有扩散的N型区域的第一类型的光电传感器，P型阱扩散到 高电阻率半导体层; P型井中具有较深扩散的N型区域的第二类光电传感器，P型井; 以及具有扩散的N型区域的第三类型的光电传感器扩散到所有其它类型的光电传感器的所有高电阻率半导体层。 在实施例中，第四类型的光电传感器在P型阱中具有扩散的N型区域，N型区域比第一和第二类型的光电传感器的N型区域更深。