公开(公告)号：US20180301595A1

公开(公告)日：2018-10-18

申请号：US15948650

申请日：2018-04-09

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Xue WANG ,  Markus BROELL ,  Stefan BARTHEL

IPC: H01L33/06 ,  H01L33/30 ,  H01L31/0352 ,  H01L31/0304

CPC classification number: H01L33/06 ,  H01L31/03046 ,  H01L31/035263 ,  H01L33/30

Abstract: A semiconductor chip (20) is described comprising a semiconductor layer sequence (10) based on a phosphide compound semiconductor material or arsenide compound semiconductor material wherein the semiconductor layer sequence (10) contains a p-type semiconductor region (4) and an n-type semiconductor region (2). The n-type semiconductor region (2) comprises a superlattice structure (20) for improving current spreading, wherein the superlattice structure (20) has a periodic array of semiconductor layers (21, 22, 23, 24). A period of the superlattice structure (20) has at least one undoped first semiconductor layer (21) and a doped second semiconductor layer (22), wherein an electronic band gap E2 of the doped second semiconductor layer (22) is larger than an electronic band gap E1 of the undoped first semiconductor layer (21).