-
公开(公告)号：US10212379B2
公开(公告)日：2019-02-19
申请号：US15872016
申请日：2018-01-16
Inventor： Shinichi Machida , Takeyoshi Tokuhara , Manabu Nakata , Sanshiro Shishido , Masaaki Yanagida , Masumi Izuchi
Abstract: An imaging apparatus includes a unit pixel including a pixel electrode, a charge accumulation region electrically connected to the pixel electrode, and a signal detection circuit electrically connected to the charge accumulation region; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the electrodes; and a voltage supply circuit configured to selectively apply any one of first, second, and third voltages between the electrodes. The photoelectric conversion layer exhibits first and second wavelength sensitivity characteristics in a wavelength range when the voltage supply circuit applies the first and second voltages between the electrodes, respectively, and becomes insensitive to light in the wavelength range when the voltage supply circuit applies the third voltage between the electrodes.
-
Patent Agency Ranking
公开(公告)号：US11723224B2
公开(公告)日：2023-08-08
申请号：US17231614
申请日：2021-04-15
Inventor： Tatsunori Momose , Hiroaki Iijima , Masumi Izuchi , Seiji Takagi
CPC classification number: H10K39/32 , H10K30/10 , H10K30/211 , H10K30/353 , H10K85/211 , H10K85/311 , H10K85/6572
Abstract: An imaging apparatus includes a first electrode, a second electrode, and a photoelectric conversion layer located between the first electrode and the second electrode. The photoelectric conversion layer contains a first material, a second material, and a third material. The first material is a fullerene or a fullerene derivative. The second material is a donor-like organic semiconductor material. The average absorption coefficient in the visible light wavelength range of the third material is less than the average absorption coefficient in the visible light wavelength range of the first material.
-
公开(公告)号：US11233965B2
公开(公告)日：2022-01-25
申请号：US16437975
申请日：2019-06-11
Inventor： Shinichi Machida , Takeyoshi Tokuhara , Manabu Nakata , Sanshiro Shishido , Masaaki Yanagida , Masumi Izuchi
Abstract: An imaging apparatus includes a unit pixel including a pixel electrode, a charge accumulation region electrically connected to the pixel electrode, and a signal detection circuit electrically connected to the charge accumulation region; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the electrodes; and a voltage supply circuit configured to selectively apply any one of first, second, and third voltages between the electrodes. The photoelectric conversion layer exhibits first and second wavelength sensitivity characteristics in a wavelength range when the voltage supply circuit applies the first and second voltages between the electrodes, respectively, and becomes insensitive to light in the wavelength range when the voltage supply circuit applies the third voltage between the electrodes.
-
公开(公告)号：US10998380B2
公开(公告)日：2021-05-04
申请号：US16188327
申请日：2018-11-13
Inventor： Manabu Nakata , Masumi Izuchi , Shinichi Machida , Yasunori Inoue
IPC: H04N5/33 , H01L27/30 , H04N5/374 , H04N9/04 , H04N5/369 , H04N9/07 , H01L27/28 , H01L51/00 , H01L51/42
Abstract: An imaging device includes at least one unit pixel cell including a photoelectric converter and a voltage application circuit. The photoelectric converter includes a first electrode, a light-transmitting second electrode, a first photoelectric conversion layer containing a first material and a second photoelectric conversion layer containing a second material. The impedance of the first photoelectric conversion layer is larger than the impedance of the second photoelectric conversion layer. The voltage application circuit applies a first voltage or a second voltage having a larger absolute value than the first voltage selectively between the first electrode and the second electrode.
-
公开(公告)号：US10735652B2
公开(公告)日：2020-08-04
申请号：US16439834
申请日：2019-06-13
Inventor： Manabu Nakata , Shinichi Machida , Takeyoshi Tokuhara , Sanshiro Shishido , Masaaki Yanagida , Masumi Izuchi
Abstract: A method for controlling an imaging device having a first mode to perform imaging in a first imaging wavelength band and a second mode to perform imaging in a second imaging wavelength band different from the first imaging wavelength band, and that allows switching of an operation mode from the first mode to the second mode or from the second mode to the first mode. The method including causing the imaging device to perform imaging in the first mode or the second mode; determining, with a predetermined frequency or in response to a predetermined trigger, whether to maintain a current operation mode or switch the current operation mode on the basis of first image information in the first imaging wavelength band and second image information in the second imaging wavelength band; and in accordance with the determination, selectively maintaining the current operation mode or switching the current operation mode.
-
公开(公告)号：US10367998B2
公开(公告)日：2019-07-30
申请号：US15871978
申请日：2018-01-15
Inventor： Manabu Nakata , Shinichi Machida , Takeyoshi Tokuhara , Sanshiro Shishido , Masaaki Yanagida , Masumi Izuchi
Abstract: A method is for controlling an imaging device that allows switching of an operation mode between a first mode to perform imaging in a first imaging wavelength band and a second mode to perform imaging in a second imaging wavelength band different from the first imaging wavelength band. The method includes: determining whether ambient light includes near-infrared light based on information obtained in the first mode and information obtained in the second mode; and maintaining or changing the operation mode.
-
-
-
-
-
Search Results
16
records
(took 0.023 seconds)
