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公开(公告)号：US12101949B2
公开(公告)日：2024-09-24
申请号：US17700941
申请日：2022-03-22
Inventor： Shinichi Machida , Katsuya Nozawa , Sanshiro Shishido
CPC classification number: H10K30/821 , H10K39/32 , H10K85/221
Abstract: A photoelectric conversion element includes: a first electrode; a second electrode; and a photoelectric conversion layer disposed between the first electrode and the second electrode and containing semiconducting carbon nanotubes and a first material that functions as a donor or an acceptor for the semiconducting carbon nanotubes. The semiconducting carbon nanotubes have light absorption characteristics including a first absorption peak at a first wavelength, a second absorption peak at a second wavelength shorter than the first wavelength, and a third absorption peak at a third wavelength shorter than the second wavelength. The first material is transparent to light in at least one wavelength range selected from the group consisting of a first wavelength range between the first wavelength and the second wavelength and a second wavelength range between the second wavelength and the third wavelength.
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公开(公告)号：US11233955B2
公开(公告)日：2022-01-25
申请号：US17173031
申请日：2021-02-10
Inventor： Shinichi Machida , Masashi Murakami , Takeyoshi Tokuhara , Masaaki Yanagida , Sanshiro Shishido , Manabu Nakata , Masumi Izuchi
Abstract: An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.
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公开(公告)号：US10854678B2
公开(公告)日：2020-12-01
申请号：US16251599
申请日：2019-01-18
Inventor： Shunsuke Isono , Hidenari Kanehara , Sanshiro Shishido , Takeyoshi Tokuhara
IPC: H01L27/30 , H04N5/374 , H04N5/376 , H01L27/146
Abstract: An imaging device includes: a semiconductor substrate including a pixel region in which pixels are arranged and a peripheral region adjacent to the pixel region; an insulating layer that covers the pixel region and the peripheral region; a first electrode located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrode; a second electrode that covers the photoelectric conversion layer; detection circuitry located in the pixel region and connected to the first electrode; peripheral circuitry located in the peripheral region and connected to the detection circuitry; and a third electrode located on the insulating layer above the peripheral region. The second electrode extends above the peripheral region, and the second electrode includes a connection region in which the second electrode is connected to the third electrode, the connection region overlapping the peripheral circuitry in plan view.
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4.发明授权公开(公告)号：US10708511B2
公开(公告)日：2020-07-07
申请号：US16124435
申请日：2018-09-07
Inventor： Satoshi Sato , Sanshiro Shishido , Katsuya Nozawa , Takeo Azuma , Masaaki Yanagida , Takeyoshi Tokuhara , Kunio Nobori
IPC: H04N7/18 , H04N5/235 , G06T7/521 , G06T7/246 , G01S7/481 , G01S17/58 , G01S17/89 , G01C3/08 , H04N5/353 , H04N5/3745 , H01L27/146
Abstract: A three-dimensional motion obtaining apparatus includes: a light source; a charge amount obtaining circuit that includes pixels and obtains, for each of the pixels, a first charge amount under a first exposure pattern and a second charge amount under a second exposure pattern having an exposure period that at least partially overlaps an exposure period of the first exposure pattern; and a processor that controls a light emission pattern for the light source, the first exposure pattern, and the second exposure pattern. The processor estimates a distance to a subject for each of the pixels on the basis of the light emission pattern and on the basis of the first charge amount and the second charge amount of each of the pixels obtained by the charge amount obtaining circuit, and estimates an optical flow for each of the pixels on the basis of the first exposure pattern, the second exposure pattern, and the first charge amount and the second charge amount obtained by the charge amount obtaining circuit.
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公开(公告)号：US10542230B2
公开(公告)日：2020-01-21
申请号：US16203166
申请日：2018-11-28
Inventor： Hidenari Kanehara , Yasuo Miyake , Sanshiro Shishido
IPC: H04N3/14 , H04N5/335 , H04N5/3745 , H01L27/146 , H04N5/378 , H04N5/374 , H04N5/376
Abstract: An imaging device having pixels in a row which include: first pixel including a first photoelectric converter and a first transistor having a first control terminal; second pixel including a second photoelectric converter and a second transistor having a second control terminal; third pixel including a third photoelectric converter and a third transistor having a third control terminal; and fourth pixel including a fourth photoelectric converter and a fourth transistor having a fourth control terminal. The device further including input signal line, a signal for controlling the first to fourth transistors input to the signal line; first buffer circuit having a first input terminal coupled to the signal line, and a first output terminal coupled to the first and second control terminals; and second buffer circuit having a second input terminal coupled to the signal line and a second output terminal coupled to the second and third control terminals.
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Patent Agency Ranking
公开(公告)号：US10367108B2
公开(公告)日：2019-07-30
申请号：US16000885
申请日：2018-06-06
Inventor： Masayuki Takase , Sanshiro Shishido
IPC: H01L27/14 , H01L31/0352 , H01L27/146 , H01L31/101
Abstract: A photodetection device includes: a photoelectric converter generating charge; a first transfer channel having first and second ends, the first end being connected to the photoelectric converter, charge from the photoelectric converter being transferred from the first end toward the second end; a second transfer channel diverging from the first transfer channel at a first position; a third transfer channel diverging from the first transfer channel at a second position, further than the first position from the first end; a first charge accumulator accumulating charge transferred through the second transfer channel; a second charge accumulator accumulating charge transferred through the third transfer channel; a first gate electrode switching between transfer/cutoff of charge in the first transfer channel; and at least one second gate electrode switching between transfer/cutoff of charge in the second and third transfer channels, the third transfer channel being wider than the second transfer channel.
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公开(公告)号：US09641774B2
公开(公告)日：2017-05-02
申请号：US15073600
申请日：2016-03-17
Inventor： Sanshiro Shishido , Masahiro Higuchi , Dai Ichiryu , Kazuko Nishimura , Yutaka Abe
CPC classification number: H04N5/357 , H04N5/243 , H04N5/3658 , H04N5/374 , H04N5/37452 , H04N5/37455 , H04N5/378
Abstract: A solid-state imaging device that suppresses streaking includes an imaging region in which unit cells are aligned in matrix, an A/D converter for converting an analog signal generated in the imaging region to a digital signal, and a ramp buffer having an input terminal and an output terminal. Ramp voltage is input to the input terminal, and a reference signal having the ramp voltage is output from the output terminal toward the A/D converter. The A/D converter includes a comparator disposed in each column for comparing an analog signal with a reference signal, and a counter disposed corresponding to the comparator for counting a comparison period of the comparator. The ramp buffer includes a feedback circuit for simultaneously outputting the reference signal to the multiple comparators and controlling the amount of current flowing to the output terminal according to the ramp voltage of the reference signal output from the terminal.
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公开(公告)号：US09282267B2
公开(公告)日：2016-03-08
申请号：US14554005
申请日：2014-11-25
Inventor： Sanshiro Shishido , Masahiro Higuchi
IPC: H04N5/357 , H04N5/365 , H04N5/374 , H04N5/378 , H04N5/3745
CPC classification number: H04N5/3658 , H03M1/1245 , H04N5/357 , H04N5/3651 , H04N5/3698 , H04N5/3742 , H04N5/37455 , H04N5/378
Abstract: The solid-state imaging device includes a D/A converting circuit generating a reference voltage to be used for an A/D conversion. The D/A converting circuit includes: a voltage generating circuit generating an analog voltage according to a digital signal; a buffer circuit (a resistor ladder upper voltage supplying buffer circuit) which buffers the generated analog voltage, the buffer circuit sampling and holding a bias voltage generated inside the buffer circuit, and outputting the buffered analog voltage using the held bias voltage; an analog signal outputting unit (a resistor ladder unit) outputting the reference voltage according to the inputted digital signal, by receiving an output from the buffer circuit; and a pre-charge amplifier which charges a noise-reducing capacitor in conjunction with the sampling and holding by the buffer circuit, the noise-reducing capacitor being connected to the analog signal outputting unit.
Abstract translation: 固态成像装置包括产生用于A / D转换的参考电压的D / A转换电路。 D / A转换电路包括：电压产生电路，根据数字信号产生模拟电压; 缓冲电路，缓冲所产生的模拟电压的缓冲电路，缓冲电路采样并保持在缓冲电路内产生的偏置电压，并使用保持的偏置电压输出缓冲的模拟电压; 模拟信号输出单元（电阻梯形单元），通过接收来自缓冲电路的输出，根据输入的数字信号输出参考电压; 以及与缓冲电路的采样和保持相结合对降噪电容器充电的预充电放大器，降噪电容器连接到模拟信号输出单元。
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公开(公告)号：US12193245B2
公开(公告)日：2025-01-07
申请号：US17396640
申请日：2021-08-06
Inventor： Sanshiro Shishido , Yasuo Miyake
Abstract: An imaging device includes pixels. Each of the pixels includes a counter electrode, a pixel electrode, and a photoelectric conversion layer that includes carbon nanotubes. The pixels include a first pixel and a second pixel adjacent to the first pixel. The pixel electrode of the first pixel and the pixel electrode of the second pixel are isolated from each other. Carbon nanotubes included in the photoelectric conversion layer in at least one selected from the group consisting of the first pixel and the second pixel include at least one first carbon nanotube that satisfies A
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公开(公告)号：US11777050B2
公开(公告)日：2023-10-03
申请号：US17238250
申请日：2021-04-23
Inventor： Shinichi Machida , Takeyoshi Tokuhara , Sanshiro Shishido
IPC: H01L31/112 , H10K30/35 , H01L31/0352
CPC classification number: H01L31/1129 , H01L31/035218 , H01L31/112 , H10K30/35
Abstract: An optical sensor includes: a photosensitive layer that absorbs incident light to generate a first carrier with a first polarity and a second carrier with a second polarity different from the first polarity; a channel layer that is electrically connected to the photosensitive layer and that conducts the first carrier that has moved from the photosensitive layer; a counter electrode facing the channel layer through the photosensitive layer; an insulating layer positioned between the photosensitive layer and the counter electrode; and a source electrode and a drain electrode each electrically connected to the channel layer.
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