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公开(公告)号：US11777050B2
公开(公告)日：2023-10-03
申请号：US17238250
申请日：2021-04-23
Inventor： Shinichi Machida , Takeyoshi Tokuhara , Sanshiro Shishido
IPC: H01L31/112 , H10K30/35 , H01L31/0352
CPC classification number: H01L31/1129 , H01L31/035218 , H01L31/112 , H10K30/35
Abstract: An optical sensor includes: a photosensitive layer that absorbs incident light to generate a first carrier with a first polarity and a second carrier with a second polarity different from the first polarity; a channel layer that is electrically connected to the photosensitive layer and that conducts the first carrier that has moved from the photosensitive layer; a counter electrode facing the channel layer through the photosensitive layer; an insulating layer positioned between the photosensitive layer and the counter electrode; and a source electrode and a drain electrode each electrically connected to the channel layer.
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公开(公告)号：US11114505B2
公开(公告)日：2021-09-07
申请号：US17078440
申请日：2020-10-23
Inventor： Shunsuke Isono , Hidenari Kanehara , Sanshiro Shishido , Takeyoshi Tokuhara
IPC: H01L27/30 , H04N5/374 , H04N5/376 , H01L27/146
Abstract: An imaging device including a semiconductor substrate including a pixel region and a peripheral region; an insulating layer covering the pixel and peripheral regions; first electrodes located on the insulating layer above the pixel region; a photoelectric conversion layer covering the first electrodes; a second electrode that covers the photoelectric conversion layer; detection circuitry electrically connected to the first electrodes; peripheral circuitry electrically connected to the detection circuitry, and; and a third electrode located on the insulating layer. The second electrode includes a connection region in which the second electrode is connected to third electrode, the connection region overlaps analog circuitry in a plan view, and in any cross-sections perpendicular to a surface of the semiconductor substrate and parallel to a column or row direction and that intersects at least one of the first electrodes, the digital circuitry includes no transistor that is located directly below the connection region.
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公开(公告)号：US11044433B2
公开(公告)日：2021-06-22
申请号：US16681370
申请日：2019-11-12
Inventor： Sanshiro Shishido , Takeyoshi Tokuhara , Masaaki Yanagida
IPC: H04N5/378 , H01L27/146 , H04N5/355 , H01L27/30 , H01L51/00
Abstract: An imaging device including an imaging cell including a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, and a first transistor one of a source and a drain of which is coupled to the first electrode; and voltage supply circuitry coupled to the other of the source and the drain of the first transistor, the voltage supply circuitry being configured to supply a first voltage in a first period and a second voltage different from the first voltage in a second period different from the first period.
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公开(公告)号：US11863895B2
公开(公告)日：2024-01-02
申请号：US17185821
申请日：2021-02-25
Inventor： Yasuo Miyake , Yusuke Okada , Takeyoshi Tokuhara , Yoshiaki Satou
IPC: H04N25/75 , H04N25/589 , H04N25/772
CPC classification number: H04N25/75 , H04N25/589 , H04N25/772
Abstract: An imaging device 100 includes a pixel array PA. A first period, a third period, and a second period appear in this order in a first frame. During the first period, pixel signal readout is performed on a first row in the pixel array PA. During the second period, pixel signal readout is performed on a second row in the pixel array PA. Each of the first period and the second period is a high-sensitivity exposure period. The third period is a low-sensitivity exposure period.
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公开(公告)号：US11528443B2
公开(公告)日：2022-12-13
申请号：US17098505
申请日：2020-11-16
Inventor： Yusuke Okada , Takeyoshi Tokuhara , Yoshiaki Satou , Yasuo Miyake
IPC: H04N5/378 , H01L27/146 , H01L27/148 , H04N5/355 , H04N5/369 , H04N5/374
Abstract: An imaging device 100 includes a pixel array PA. A first period, a third period, and a second period appear in this order in one frame. During the first period, pixel signal readout is performed on at least one first row in the pixel array PA. During the second period, pixel signal readout is performed on at least one second row in the pixel array PA. At least one of the at least one first row or the at least one second row includes two rows in the pixel array PA. During the third period, no pixel signal readout is performed on the rows in the pixel array PA. Each of the first period and the second period is one of the high-sensitivity exposure period and the low-sensitivity exposure period. The third period is the other of the high-sensitivity exposure period and the low-sensitivity exposure period.
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Patent Agency Ranking
公开(公告)号：US11317043B2
公开(公告)日：2022-04-26
申请号：US16906446
申请日：2020-06-19
Inventor： Takeyoshi Tokuhara , Yasuo Miyake , Sanshiro Shishido
Abstract: An imaging device includes a pixel including a permittivity modulation element that includes opposite and pixel electrodes and a permittivity modulation structure whose permittivity changes according to the radiation of light, a capacitive element that includes first and second electrodes, and a detection circuit that outputs a signal corresponding to the potential of the pixel electrode. Also provided are a voltage supply circuit that applies first and second voltages in different first and second periods to one of the opposite electrode and the first electrode, and a signal processing circuit that generates a third signal being a difference between a first signal output from the detection circuit in the first period and a second signal output from the detection circuit in the second period. The potential difference between the opposite electrode and the first electrode when the second voltage is applied is less than when the first voltage is applied.
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公开(公告)号：US10523888B2
公开(公告)日：2019-12-31
申请号：US15876258
申请日：2018-01-22
Inventor： Sanshiro Shishido , Takeyoshi Tokuhara , Masaaki Yanagida
IPC: H04N5/378 , H01L27/146 , H01L51/00 , H04N5/355 , H01L27/30
Abstract: An imaging device of the present disclosure includes: an imaging cell including a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric converter generating signal charge by photoelectric conversion, and a charge detection circuit connected to the first electrode, the charge detection circuit detecting the signal charge; a signal line electrically coupled to the first electrode; and a voltage supply circuit selectively supplying a first voltage and a second voltage different from the first voltage to the signal line.
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公开(公告)号：US10477121B2
公开(公告)日：2019-11-12
申请号：US15873190
申请日：2018-01-17
Inventor： Shinichi Machida , Masashi Murakami , Takeyoshi Tokuhara , Masaaki Yanagida , Sanshiro Shishido , Manabu Nakata , Masumi Izuchi
Abstract: An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.
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公开(公告)号：US10057502B2
公开(公告)日：2018-08-21
申请号：US15442078
申请日：2017-02-24
Inventor： Tokuhiko Tamaki , Takeyoshi Tokuhara
IPC: H04N5/243 , H01L27/146 , H04N5/378 , H04N5/369
CPC classification number: H04N5/243 , H01L27/14612 , H01L27/14627 , H01L27/14636 , H01L27/14643 , H04N5/33 , H04N5/3698 , H04N5/378
Abstract: A photosensor includes a photoelectric converter including first and second electrodes and a photoelectric conversion layer therebetween; a transistor having a gate, a source and a drain; a connector electrically connecting the first electrode and the gate together; and one or more wiring layers including a part of the connector. The transistor outputs an electric signal from one of the source and the drain, the electric signal corresponding to a change in dielectric constant between the first electrode and the second electrode, the change being caused by incident light on the photoelectric conversion layer. The one or more wiring layers include a first line coupled to the one of the source and the drain and a second line supplied with a fixed voltage in a period during operation. A distance between the first line and the connector is less than a distance between the second line and the connector.
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公开(公告)号：US11451726B2
公开(公告)日：2022-09-20
申请号：US17364441
申请日：2021-06-30
Inventor： Takeyoshi Tokuhara , Yoshiaki Satou , Yusuke Okada
IPC: H04N5/355 , H04N5/335 , H04N5/369 , H01L27/146
Abstract: An imaging device includes: a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer that generates a signal charge; a charge accumulator connected to the first electrode to accumulate the signal charge; a first voltage supply circuit connected to the second electrode and that selectively supplies at least two different voltages including a first voltage and a third voltage greater than the first voltage; and a second voltage supply circuit that is connected to the charge accumulator via capacitance and that selectively supplies at least two different voltages including a second voltage and a fourth voltage less than the second voltage, where in a first period in which the first voltage supply circuit supplies the first voltage, the first period being included in an accumulation period for accumulating the signal charge in the charge accumulator, the second voltage supply circuit supplies the second voltage.
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