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    Method of producing semi-conductor electrode systems
    11.
    发明授权
    Method of producing semi-conductor electrode systems 失效
    生产半导体电极系统的方法

    公开(公告)号：US3072514A

    公开(公告)日：1963-01-08

    申请号：US78642159

    申请日：1959-01-12

    Applicant: PHILIPS CORP

    Inventor： WILHELMUS JOCHEMS PIETER JOHAN ,  AMS JOHANNES JACOBUS ASUERUS P ,  HERRE RINIA

    IPC: B23K15/08 ,  H01L21/00 ,  H01L29/00

    CPC classification number: H01L21/00 ,  B23K15/08 ,  H01L29/00 ,  Y10S438/944

    Abstract: 906,941. Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES Ltd. Jan. 14, 1959 [Jan. 17, 1958], No. 1390/59. Class 37. In the production of a semi-conductor device, the removal of some part, such as selected regions of a layer required to act as a mask in a later operation, is effected by projecting an abrasive or other medium against the surface in the region of a projecting electrode whereby removal is effected except in the region of the electrode shadow. Fig. 2 shows a P-type germanium body with an N- type layer 2, an alloyed rectifying contact 3 and an ohinic contact 4, both to the N-type layer 2. The body and electrodes are covered with a lacquer such as a solution of nitro-cellulose in butyl acetate. A mixture of air and butyl acetate is then sprayed on to the device in the directions of arrows 8 and 9 (Fig. 4) so that all the lacquer layer is removed except that portion lying on and between the electrodes. The device is then dipped into an etching solution of hydrofluoric and nitric acids to dissolve away the N-type layer 2 except for the region between electrodes 3 and 4. Removal of the lacquer layer provides a transistor as shown in Fig. 6 comprising base electrode 4 and emitter 3, the main P-type semi-conductor zone 1 forming the collector. The projected medium for removing the material may consist of an electron beam or a light beam in conjunction with an etching process. Leads may be added to the electrodes and the body soldered to a nickel strip before the process commences, and the invention may be applied to circular and annular shaped electrodes.

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