公开(公告)号：US20230371289A1

公开(公告)日：2023-11-16

申请号：US18357110

申请日：2023-07-22

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： MASAYA HIRADE ,  HIROAKI IIJIMA ,  YUKO KISHIMOTO ,  MASUMI IZUCHI

IPC: H10K30/30 ,  H10K85/20 ,  H10K85/30

CPC classification number: H10K30/353 ,  H10K85/211 ,  H10K85/311 ,  H10K30/86

Abstract: An imaging device includes a photoelectric conversion element that includes a first electrode, a second electrode facing the first electrode, and a photoelectric conversion layer located between the first electrode and the second electrode; and a charge detection circuit that reads a charge generated in the photoelectric conversion element. The photoelectric conversion layer is a bulk heterojunction layer that contains a phthalocyanine derivative or a naphthalocyanine derivative and a fullerene polymer. In the fullerene polymer, a fullerene or a fullerene derivative is crosslinked by a crosslinking structure represented by general formula (1) below. In general formula (1), X is a bifunctional functional group.


NCH2XCH2N  (1)

公开(公告)号：US20230283927A1

公开(公告)日：2023-09-07

申请号：US18315514

申请日：2023-05-11

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： TAKAMICHI YOKOYAMA ,  HIROAKI IIJIMA ,  MORIO MITSUISHI

IPC: H04N25/77 ,  H10K39/32 ,  H04N25/709 ,  H04N25/63

CPC classification number: H04N25/77 ,  H10K39/32 ,  H04N25/709 ,  H04N25/63

Abstract: An imaging device includes a plurality of pixels and a voltage supply circuit. Each of the plurality of pixels includes: a pixel electrode; a counter electrode; a photoelectric conversion layer located between the pixel electrode and the counter electrode; and a charge blocking layer located between the pixel electrode and the photoelectric conversion layer. The charge blocking layer contains an impurity and has a first surface facing the photoelectric conversion layer and a second surface facing the pixel electrode. The concentration of the impurity on the first surface is higher than the concentration of the impurity on the second surface. The voltage supply circuit supplies a first voltage between the counter electrode and the pixel electrode in a first period and supplies a second voltage different from the first voltage between the counter electrode and the pixel electrode in a second period.

公开(公告)号：US20220158103A1

公开(公告)日：2022-05-19

申请号：US17649559

申请日：2022-02-01

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YUKO KISHIMOTO ,  MITSURU HARADA ,  HIROAKI IIJIMA

IPC: H01L51/42 ,  H01L51/44

Abstract: An optical sensor includes a substrate, a photoelectric conversion layer, a first electrode, and a second electrode. The photoelectric conversion layer has a first surface facing the substrate, a second surface located opposite the first surface, and at least one side surface connecting the first surface with the second surface. The photoelectric conversion layer is supported by the substrate. The first electrode includes a first portion and a second portion separated from the first portion. The second portion is closer to the second surface than the first portion is. The first electrode is provided on the at least one side surface. The second electrode is provided on the at least one side surface.

公开(公告)号：US20250024694A1

公开(公告)日：2025-01-16

申请号：US18898737

申请日：2024-09-27

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： KENICHI AOYAMA ,  HIROAKI IIJIMA ,  YUUKO TOMEKAWA

IPC: H10K39/32

Abstract: An imaging device includes a pixel electrode having a top surface and a bottom surface facing the top surface, a photoelectric conversion layer that is in contact with the top surface and converts light into electric charge, and a top electrode that faces the top surface of the pixel electrode with the photoelectric conversion layer interposed therebetween. The pixel electrode contains a nitride of a first metal, and a second metal different from the first metal. The nitride of the first metal is a main component of the pixel electrode. A concentration of the second metal in a first three-dimensional region including the top surface is higher than a concentration of the second metal in a second three-dimensional region including the bottom surface. The first three-dimensional region does not include the bottom surface, and the second three-dimensional region does not include the top surface.

公开(公告)号：US20240276744A1

公开(公告)日：2024-08-15

申请号：US18626366

申请日：2024-04-04

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： MORIO MITSUISHI ,  TAKAMICHI YOKOYAMA ,  HIROAKI IIJIMA

IPC: H10K30/85 ,  H10K39/32

CPC classification number: H10K30/85 ,  H10K39/32

Abstract: An imaging apparatus includes a first electrode, a second electrode, a photoelectric conversion layer, a charge injection layer, and a charge accumulation region. The second electrode opposes the first electrode. The photoelectric conversion layer is located between the first electrode and the second electrode, contains a donor semiconductor material and an acceptor semiconductor material, and generates a pair of an electron and a hole. The charge injection layer is located between the first electrode and the photoelectric conversion layer. The charge accumulation region is electrically coupled to the second electrode and accumulates the hole. An ionization potential of the charge injection layer is less than or equal to an ionization potential of the acceptor semiconductor material. Electron affinity of the charge injection layer is less than or equal to electron affinity of the acceptor semiconductor material. Light transmittance of the charge injection layer is greater than or equal to 70%.

公开(公告)号：US20230354623A1

公开(公告)日：2023-11-02

申请号：US18346759

申请日：2023-07-03

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： HIROAKI IIJIMA ,  MASAYA HIRADE ,  YUKO KISHIMOTO ,  MASUMI IZUCHI

IPC: H10K30/65 ,  H10K85/30 ,  H10K30/81 ,  H10K30/80 ,  H10K39/32

CPC classification number: H10K30/65 ,  H10K85/311 ,  H10K30/81 ,  H10K30/865 ,  H10K39/32

Abstract: A photocurrent multiplication device having an external quantum efficiency of 100% or more includes at least one first electrode, at least one second electrode facing the at least one first electrode, and a photoelectric conversion film that is located between the at least one first electrode and the at least one second electrode and that includes a donor material and an acceptor material. The photoelectric conversion film at least partially has a sea-island structure in which the donor material is interspersed in the photoelectric conversion film.

公开(公告)号：US20220059783A1

公开(公告)日：2022-02-24

申请号：US17517060

申请日：2021-11-02

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： HIROAKI IIJIMA ,  MASAYA HIRADE ,  YUKO KISHIMOTO ,  MASUMI IZUCHI

IPC: H01L51/00 ,  C07F7/02

Abstract: A composition contains a naphthalocyanine derivative represented by the following formula: where R1 to R8 are each independently an alkyl group, and R9 and R10 are each independently an aryl group.

公开(公告)号：US20210335889A1

公开(公告)日：2021-10-28

申请号：US17231614

申请日：2021-04-15

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： TATSUNORI MOMOSE ,  HIROAKI IIJIMA ,  MASUMI IZUCHI ,  SEIJI TAKAGI

IPC: H01L27/30 ,  H01L51/42 ,  H01L51/00

Abstract: An imaging apparatus includes a first electrode, a second electrode, and a photoelectric conversion layer located between the first electrode and the second electrode. The photoelectric conversion layer contains a first material, a second material, and a third material. The first material is a fullerene or a fullerene derivative. The second material is a donor-like organic semiconductor material. The average absorption coefficient in the visible light wavelength range of the third material is less than the average absorption coefficient in the visible light wavelength range of the first material.