公开(公告)号：US06499135B1

公开(公告)日：2002-12-24

申请号：US09579109

申请日：2000-05-25

申请人： Mu-Jing Li ,  Ward Vercruysse ,  Pankaj Dixit ,  Timothy Horel

发明人： Mu-Jing Li ,  Ward Vercruysse ,  Pankaj Dixit ,  Timothy Horel

IPC分类号： G06F1750

CPC分类号： G06F17/5068

摘要： For an integrated circuit having multiple metal layers, a computer-aided design (CAD) method for designing grounded fill in the integrated circuit includes: (a) finding the eligible fill areas for each metal layer; (b) storing the eligible fill area data for each metal layer in an overflow memory; (c) finding ground contact areas for each metal layer; (d) storing the ground contact area data for each metal layer in an overflow memory; (e) temporarily storing the eligible fill area data for a selected metal layer and the ground contact area data for the metal layers adjacent to the selected metal layer in active memory; (f) fitting a fill pattern to an eligible fill area in the selected metal layer, where the fill pattern is composed of at least one element; (g) checking the adjacent metal layers for a ground contact where the element of the fill pattern may be grounded; (h) locating a conductive via between the element of the fill pattern and a ground contact in an adjacent layer; and (i) repeating steps (e) through (h) for each metal layer.

摘要翻译： 对于具有多个金属层的集成电路，用于设计集成电路中的接地填充的计算机辅助设计（CAD）方法包括：（a）找到每个金属层的合格填充区域; （b）将每个金属层的合格填充区域数据存储在溢出存储器中; （c）找出每个金属层的接地面积; （d）将每个金属层的接地面积数据存储在溢出存储器中; （e）临时存储所选择的金属层的合格填充区域数据和与所选金属层相邻的金属层的有源存储器中的接地区域数据; （f）将填充图案拟合到所选择的金属层中的合格填充区域，其中填充图案由至少一个元素组成; （g）检查相邻的金属层以获得填充图案的元件可以接地的接地触点; （h）将填充图案的元件和相邻层中的接地触点之间的导电通孔定位; 和（i）对于每个金属层重复步骤（e）至（h）。

公开(公告)号：US5670419A

公开(公告)日：1997-09-23

申请号：US471472

申请日：1995-06-06

申请人： Pankaj Dixit ,  William P. Ingram, III ,  Monta R. Holzworth ,  Richard Klein

发明人： Pankaj Dixit ,  William P. Ingram, III ,  Monta R. Holzworth ,  Richard Klein

IPC分类号： H01L21/82 ,  H01L21/768 ,  H01L21/822 ,  H01L23/525 ,  H01L27/04 ,  H01L29/861 ,  H01L21/44

CPC分类号： H01L21/76888 ,  H01L23/5252 ,  H01L29/8615 ,  H01L2924/0002 ,  Y10S438/935

摘要： Various improvements in the fabrication of an antifuse having silicon-amorphous silicon-metal layer structure are presented. Included are improved deposition techniques for the amorphous silicon layer. The improvements include steps for the fabrication of such an antifuse without the use of platinum and the resulting antifuse and contact structures.

摘要翻译： 提出了具有硅 - 非晶硅 - 金属层结构的反熔丝的制造的各种改进。 包括用于非晶硅层的改进的沉积技术。 这些改进包括在不使用铂的情况下制造这种反熔丝的步骤以及由此产生的反熔丝和接触结构。

公开(公告)号：US5527745A

公开(公告)日：1996-06-18

申请号：US158134

申请日：1993-11-24

申请人： Pankaj Dixit ,  William P. Ingram, III ,  Monta R. Holzworth ,  Richard Klein

发明人： Pankaj Dixit ,  William P. Ingram, III ,  Monta R. Holzworth ,  Richard Klein

IPC分类号： H01L21/82 ,  H01L21/768 ,  H01L21/822 ,  H01L23/525 ,  H01L27/04 ,  H01L29/861 ,  H01L21/70 ,  H01L27/00

CPC分类号： H01L21/76888 ,  H01L23/5252 ,  H01L29/8615 ,  H01L2924/0002 ,  Y10S438/935

摘要： Various improvements in the fabrication of an antifuse having silicon-amorphous silicon-metal layer structure are presented. Included are improved deposition techniques for the amorphous silicon layer. The improvements include steps for the fabrication of such an antifuse without the use of platinum and the resulting antifuse and contact structures.

摘要翻译： 提出了具有硅 - 非晶硅 - 金属层结构的反熔丝的制造的各种改进。 包括用于非晶硅层的改进的沉积技术。 这些改进包括在不使用铂的情况下制造这种反熔丝的步骤以及由此产生的反熔丝和接触结构。

公开(公告)号：US5493147A

公开(公告)日：1996-02-20

申请号：US319765

申请日：1994-10-07

申请人： Monta R. Holzworth ,  Richard Klein ,  Pankaj Dixit ,  William P. Ingram, III

发明人： Monta R. Holzworth ,  Richard Klein ,  Pankaj Dixit ,  William P. Ingram, III

IPC分类号： H01L21/82 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/525 ,  H01L27/118 ,  H01L29/00

CPC分类号： H01L23/5252 ,  H01L21/76888 ,  H01L2924/0002

摘要： An antifuse structure particularly suitable for field programmable gate arrays is presented. In most present day processes the antifuse structure is formed with a refractory metal layer, amorphous silicon layer and refractory metal layer sandwiched between two metal interconnection lines. Unprogrammed resistances of very high values, programmed resistances of very low values, short programming times and desirable programming voltages are among the advantages realized.

公开(公告)号：US5329153A

公开(公告)日：1994-07-12

申请号：US866037

申请日：1992-04-10

申请人： Pankaj Dixit

发明人： Pankaj Dixit

IPC分类号： H01L23/525 ,  H01L23/532 ,  H01L27/02

CPC分类号： H01L23/53271 ,  H01L23/5252 ,  H01L2924/0002

摘要： An antifuse in an integrated circuit which has first and second conducting lines, a semiconductor layer of amorphous silicon between the first and second conducting lines, and a barrier metal layer of TiN between the semiconductor layer and the first conducting layer is disclosed. The TiN layer is nonstoichiometric composition to enhance the probability of said antifuse having a desired resistance when said antifuse is programmed. More specifically, the TiN layer has a composition of Ti.sub.1.0 N.sub.0.5-0.8.

摘要翻译： 公开了一种集成电路中的反熔丝，其具有第一和第二导电线，第一和第二导电线之间的非晶硅半导体层以及半导体层和第一导电层之间的TiN的阻挡金属层。 当所述反熔丝被编程时，TiN层是非化学计量组成，以增强所述反熔丝具有期望电阻的概率。 更具体地说，TiN层的组成为Ti1.0N0.5-0.8。

公开(公告)号：US5233217A

公开(公告)日：1993-08-03

申请号：US695363

申请日：1991-05-03

申请人： Pankaj Dixit ,  Monta R. Holzworth ,  Richard Klein ,  William P. Ingram, III

发明人： Pankaj Dixit ,  Monta R. Holzworth ,  Richard Klein ,  William P. Ingram, III

IPC分类号： H01L21/82 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/525 ,  H01L23/532

CPC分类号： H01L23/5252 ,  H01L23/53271 ,  H01L2924/0002

摘要： An antifuse particularly suitable for submicron geometries is presented. The antifuse is formed between a silicon layer, which could be a doped region of the semiconductor substrate, an epitaxial layer or a polysilicon layer, and an upper metal interconnection layer. In contact holes in a silicon dioxide layer insulating the silicon and metal interconnection layers from each other, the antifuses have a thick refractory metal layer having a top surface approximately at the same level as the top surface of the insulating layer. Depending upon the process used to deposit the refractory metal layer, a thin adhesion layer may be located immediately below the refractory metal layer. Between the underlying silicon layer and upper interconnection layer, a thin semiconductor material layer of amorphous silicon may be located either below the refractory metal layer or above it. At its bottom, the interconnection layer also has a barrier layer to prevent any intermixing between the amorphous silicon layer and the metal interconnection layer.

摘要翻译： 提出了特别适用于亚微米几何形状的反熔丝。 反熔丝形成在可以是半导体衬底的掺杂区域的硅层，外延层或多晶硅层和上部金属互连层之间。 在硅和金属互连层彼此绝缘的二氧化硅层的接触孔中，反熔丝具有厚的难熔金属层，其顶表面与绝缘层的顶表面大致相同。 根据用于沉积难熔金属层的方法，薄的粘合层可以位于难熔金属层的正下方。 在下层硅层和上互连层之间，非晶硅的薄半导体材料层可以位于难熔金属层之下或其上方。 在其底部，互连层还具有阻挡层以防止非晶硅层和金属互连层之间的任何混合。