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公开(公告)号:US20200096640A1
公开(公告)日:2020-03-26
申请号:US16143070
申请日:2018-09-26
Applicant: QUALCOMM Incorporated
Inventor: Kalin Atanassov , Sergiu Goma , James Nash
Abstract: Aspects of the present disclosure relate to systems and methods for structured light (SL) depth systems. A depth finding system includes one or more processors and a memory, coupled to the one or more processors, includes instructions that, when executed by the one or more processors, cause the system to capture a plurality of frames based on transmitted pulses of light, where each of the frames is captured by scanning a sensor array after a respective one of the pulses has been transmitted, and generate an image depicting reflections of the transmitted light by combining the plurality of frames, where each of the frames provides a different portion of the image.
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公开(公告)号:US20200033713A1
公开(公告)日:2020-01-30
申请号:US16253648
申请日:2019-01-22
Applicant: QUALCOMM Incorporated
Inventor: Jian Ma , Sergiu Goma
Abstract: Aspects of the present disclosure relate to systems and methods for active depth sensing. An example device includes a light projector. The light projector includes a light source to emit light and a diffractive element. The diffractive element is configured to receive the emitted light that is polarized, project a first distribution of light when the received light has a first polarity, and project a second distribution of light when the received light has a second polarity.
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公开(公告)号:US20170099422A1
公开(公告)日:2017-04-06
申请号:US15141388
申请日:2016-04-28
Applicant: QUALCOMM Incorporated
Inventor: Sergiu Goma , Biay-Cheng Hseih
CPC classification number: H04N5/2355 , H01L27/146 , H01L27/14609 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H04N5/355 , H04N5/35536 , H04N5/369 , H04N5/37455 , H04N5/3765 , H04N5/378 , H04N5/379
Abstract: A high dynamic range solid state image sensor and camera system are disclosed. In one aspect, the solid state image sensor includes a first wafer including an array of pixels, each of the pixels comprising a photosensor, and a second wafer including an array of readout circuits. Each of the readout circuits is configured to output a readout signal indicative of an amount of light received by a corresponding one of the pixels and each of the readout circuits includes a counter. Each of the counters is configured to increment in response to the corresponding photosensor receiving an amount of light that is greater than a photosensor threshold. Each of the readout circuits is configured to generate the readout signal based on a value stored in the corresponding counter and a remainder stored in the corresponding pixel.
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