公开(公告)号：US20150243702A1

公开(公告)日：2015-08-27

申请号：US14634542

申请日：2015-02-27

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Keiichi ITAGAKI ,  Tatsuya KUNIKIYO

IPC: H01L27/146 ,  H04N5/341 ,  H04N9/04

CPC classification number: H04N5/341 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14689 ,  H04N5/2254

Abstract: Provided are a semiconductor device capable of detecting a light of each color with high accuracy without using a color filter, particularly enhancing detection accuracy of charges obtained by photoelectric conversion of a long-wavelength light, and manufacturing and control methods thereof. The semiconductor device has a p type semiconductor substrate, and first, second and third pixel regions. These regions each include a p type well region in the p type semiconductor substrate and an n type region configuring a pn junction therewith. The p type well region of the first pixel region is thinner, from the main surface to the lowermost portion, than that of the second and third pixel regions. On the side opposite to the main surface of the p type well region of the first and second pixel regions, a buried p type well region contiguous to the p type well region is further placed.

Abstract translation: 提供一种半导体器件，其能够高精度地检测各种颜色的光而不使用滤色器，特别是提高通过长波长光的光电转换获得的电荷的检测精度及其制造和控制方法。 半导体器件具有p型半导体衬底以及第一，第二和第三像素区域。 这些区域各自包括p型半导体衬底中的p型阱区域和与其构成pn结的n型区域。 第一像素区域的p型阱区域从主表面到最下部分比第二像素区域和第三像素区域更薄。 在与第一和第二像素区域的p型阱区域的主表面相对的一侧上，进一步放置与p型阱区域邻接的掩埋p型阱区域。

公开(公告)号：US20150028404A1

公开(公告)日：2015-01-29

申请号：US14514358

申请日：2014-10-14

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Tatsuya KUNIKIYO

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14603 ,  H01L27/14643

Abstract: A semiconductor device having a solid-state image sensor which can prevent inter-pixel crosstalk more reliably. The device includes: a semiconductor substrate having a main surface; a first conductivity type impurity layer located over the main surface of the substrate; a photoelectric transducer including a first conductivity type impurity region and a second conductivity type impurity region which are joined to each other over the first conductivity type impurity layer; and transistors which configure a unit pixel including the photoelectric transducer and are electrically coupled to the photoelectric transducer. At least part of the area around the photoelectric transducer in a plan view contains an air gap and also has an isolation insulating layer for electrically insulating the photoelectric transducer and a photoelectric transducer adjacent to it from each other. The isolation insulating layer abuts on the top surface of the first conductivity type impurity layer.

Abstract translation: 具有可以更可靠地防止像素间串扰的固态图像传感器的半导体器件。 该器件包括：具有主表面的半导体衬底; 位于所述基板的主表面上方的第一导电型杂质层; 包括在第一导电型杂质层上彼此接合的第一导电型杂质区和第二导电型杂质区的光电转换器; 以及配置包括光电换能器并且电耦合到光电换能器的单位像素的晶体管。 平面图中的光电传感器周围的至少一部分区域包含气隙，并且还具有隔离绝缘层，用于将光电变换器和与其相邻的光电传感器电绝缘。 隔离绝缘层邻接第一导电型杂质层的顶表面。